Methods of trimming nanowire structures

1. A method of forming a device, comprising:

forming an initial nanowire structure having an initial cross-sectional size;

performing a doping diffusion process to form an N-type doped region in said initial nanowire structure; and

performing an etching process to remove at least a portion of said doped region and thereby define a final nanowire structure having a final cross-sectional size, wherein said final cross-sectional size is smaller than said initial cross-sectional size.

2. The method of claim 1 , further comprising forming a gate structure around at least a portion of said final nanowire structure.

3. The method of claim 2 , wherein said gate structure comprises a gate insulation layer comprised of a high-k insulating material and a gate electrode comprised of at least one layer of metal.

4. The method of claim 2 , wherein said gate structure comprises a gate insulation layer comprised of an oxide and a gate electrode comprised of polysilicon.

5. The method of claim 1 , wherein performing said doping diffusion process comprises performing one of a plasma doping process or a gas phase doping process.

6. The method of claim 1 , wherein said doping diffusion process is performed at a temperature that falls within the range of about 600-1100° C.

7. The method of claim 1 , wherein said doped region has a dopant concentration of N-type dopant material that falls within the range of about 10 19 -10 21 atoms/cm 3 .

8. The method of claim 1 , further comprising, after performing said doping process, performing a dopant drive-in heat treatment process.

9. The method of claim 1 , wherein performing said etching process comprises performing a chlorine-based etching process.

10. The method of claim 1 , wherein said final cross-sectional size is about 20-80% smaller than said initial cross-sectional size.

11. The method of claim 1 , wherein performing said etching process removes substantially all of said doped region.

12. The method of claim 1 , wherein said initial nanowire structure has a cross-sectional configuration that is substantially circular.

13. The method of claim 1 , wherein said initial nanowire structure and said final nanowire structure have cross-sectional configurations that are substantially the same.

14. A method of forming a device, comprising:

forming an initial nanowire structure having an initial cross-sectional size;

performing a doping diffusion process to form an N-type doped region in said initial nanowire structure, wherein said doping diffusion process is performed at a temperature that falls within the range of about 600-1100° C. and wherein said doped region has a dopant concentration of N-type dopant material that falls within the range of about 10 19 -10 21 atoms/cm 3 ; and

performing an etching process to remove at least a portion of said doped region and thereby define a final nanowire structure having a final cross-sectional size, wherein said final cross-sectional size is smaller than said initial cross-sectional size.

15. The method of claim 14 , further comprising forming a gate structure around at least a portion of said final nanowire structure.

16. The method of claim 14 , wherein performing said doping diffusion process comprises performing one of a plasma doping process or a gas phase doping process.

17. The method of claim 14 , further comprising, after performing said doping process, performing a dopant drive-in heat treatment process.

18. The method of claim 14 , wherein performing said etching process comprises performing a chlorine-based etching process.

19. The method of claim 14 , wherein said final cross-sectional size is about 20-80% smaller than said initial cross-sectional size.

20. The method of claim 14 , wherein performing said etching process removes substantially all of said doped region.

21. The method of claim 14 , wherein said initial nanowire structure has a cross-sectional configuration that is substantially circular.

22. The method of claim 14 , wherein said initial nanowire structure and said final nanowire structure have cross-sectional configurations that are substantially the same.

23. A method of forming a device, comprising:

forming an initial nanowire structure having an initial cross-sectional size;

performing a doping diffusion process to form an N-type doped region in said initial nanowire structure, wherein said doping diffusion process is performed at a temperature that falls within the range of about 600-1100° C. and wherein said doped region has a dopant concentration of N-type dopant material that falls within the range of about 10 19 -10 21 atoms/cm 3 ; and

performing a chlorine-based etching process to remove at least a portion of said doped region and thereby define a final nanowire structure having a final cross-sectional size, wherein said final cross-sectional size is about 20-80% smaller than said initial cross-sectional size.

24. The method of claim 23 , further comprising forming a gate structure around at least a portion of said final nanowire structure.

25. The method of claim 23 , wherein performing said doping diffusion process comprises performing one of a plasma doping process or a gas phase doping process.

26. The method of claim 23 , further comprising, after performing said doping process, performing a dopant drive-in heat treatment process.

27. The method of claim 23 , wherein performing said etching process removes substantially all of said doped region.

28. The method of claim 23 , wherein said initial nanowire structure has a cross-sectional configuration that is substantially circular.

29. The method of claim 23 , wherein said initial nanowire structure and said final nanowire structure have cross-sectional configurations that are substantially the same.