Erased state reading
A method of determining whether a page of NAND flash memory cells is in an erased condition includes applying a first set of read conditions to identify a first number of cells having threshold voltages above a discrimination voltage under the first set of read conditions, if the first number of cells is less than a first predetermined number, applying a second set of read conditions that is different from the first set of read conditions to identify a second number of cells having threshold voltages above the discrimination voltage under the second set of read conditions, and if the second number of cells exceeds a second predetermined number, marking the page of flash memory cells as partially programmed.
1. A method of determining whether a page of NAND flash memory cells is in an erased condition comprising:
applying a first set of read conditions to identify a first number of cells having threshold voltages above a discrimination voltage under the first set of read conditions;
if the first number of cells is less than a first predetermined number, applying a second set of read conditions that is different from the first set of read conditions to identify a second number of cells having threshold voltages above the discrimination voltage under the second set of read conditions; and
if the second number of cells exceeds a second predetermined number, marking the page of flash memory cells as partially programmed.
2. The method of claim 1 wherein the first set of read conditions includes a uniform word line bias to all unselected word lines in a block containing the page of NAND flash memory cells.
3. The method of claim 2 wherein the second set of read conditions includes applying a reduced word line bias to an unselected word line adjacent to the selected word line, and applying the uniform word line bias to all other unselected word lines in the block.
4. The method of claim 3 wherein all cells along the unselected word line adjacent to the selected word line are unwritten cells.
5. The method of claim 3 wherein the uniform word line bias of the first set of read conditions is 8-10 volts and the reduced word line bias to the unselected word line in the second set of read conditions is less than 5 volts.
6. The method of claim 5 wherein the discrimination voltage is 0 volts and the discrimination voltage is applied to the selected word line.
7. The method of claim 2 wherein the second set of read conditions includes applying a reduced word line bias to two unselected word lines that are adjacent to the selected word line on either side, and applying the uniform word line bias to all other unselected word lines in the block.
8. The method of claim 2 wherein the second set of read conditions includes applying a reduced word line bias to three or more unselected word lines while applying the uniform word line bias to all other unselected word lines in the block.
9. The method of claim 1 further comprising, if the first number of cells is greater than the first predetermined number, marking the page of flash memory as partially programmed.