Method and composition for electrodeposition of copper in microelectronics with dipyridyl-based levelers

1. An electrolytic deposition composition comprising:

(a) a source of copper ions, and

(b) a leveler compound, wherein the leveler compound comprises a polymer comprising repeating units that comprise quaternized dipyridyl moieties.

2. A composition as set forth in claim 1 wherein leveler compound has been formed by co-polymerization of a dipyridyl compound and an alkylating agent and repeat units of the polymer comprise one moiety derived from the dipyridyl compound and one moiety derived from the alkylating agent.

3. An electrolytic deposition composition comprising:

(a) a source of copper ions; and

(b) a reaction product of a dipyridyl compound and an alkylating agent and the alkylating agent comprises the following structure (IIIb):

Y—(CH 2 ) p —B—(CH 2 ) q —Z  Structure (IIIb)

wherein

B is selected from among:

and

p and q may be the same or different, are integers between 0 and 6, wherein at least one of p and q is at least 1;

X is an integer from one to about four;

Y and Z are leaving groups selected from among chloride, bromide, iodide, tosyl, triflate, sulfonate, mesylate, methosulfate, fluorosulfonate, methyl tosylate, brosylate, or nosylate; and

R 1 through R 14 are each independently hydrogen, substituted or unsubstituted alkyl having from one to six carbon atoms, substituted or unsubstituted alkylene having from one to six carbon atoms, or substituted or unsubstituted aryl.

4. A composition as set forth in claim 3 wherein:

p and q are both one or are both two; and

B is selected from among:

5. A composition as set forth in claim 3 wherein:

p and q are both one or are both two; and

B is selected from among:

6. A composition as set forth in claim 3 wherein the alkylating agent is selected from the group consisting of 1-chloro-2-(2-chloroethoxy)ethane, 1,2-bis(2-chloroethoxy)ethane, 1,3-dichloropropan-2-one, 1,3-dichloropropan-2-ol, 1,2-dichloroethane, 1,3-dichloropropane, 1,4-dichlorobutane, 1,5-dichloropentane, 1,6-dichlorohexane, 1,7-dichloroheptane, 1,8-dichlorooctane, 1,2-di(2-chloroethyl)ether, 1,4-bis(chloromethyl)benzene, m-di(chloromethyl)benzene, and o-di(chloromethyl)benzene.

7. The method of claim 3 wherein the dipyridyl compound comprises the following structure (I):

wherein R 1 is a moiety that connects the pyridine rings.

8. The method of claim 3 wherein the dipyridyl compound comprises the following structure (Ia):

wherein h is an integer from 0 to 6, and R 2 and R 3 are each independently selected from among hydrogen or a short alkyl chain having from 1 to about 3 carbon atoms.

9. The method of claim 8 wherein R 2 and R 3 are each hydrogen, and the dipyridyl compound comprises the general structure (IIa):

wherein m is an integer from 0 to 6.

10. The method of claim 3 wherein the dipyridyl compound comprises any of the following structures (IIb) through (IId):

wherein m is an integer from 0 to 6.

11. The method of claim 3 wherein the dipyridyl compound comprises structure (IIe) or (IIf):

12. The method of claim 3 wherein the dipyridyl compound comprises the following structure (Ib):

wherein i and j are integers from 0 to 6, and R 4 , R 5 , R 6 , and R 6 are each independently selected from among hydrogen or a short alkyl chain having from 1 to about 3 carbon atoms.

13. The method of claim 12 wherein i and j are both 0, and the dipyridyl compound comprises one of the following structures:

14. The method of claim 3 wherein the dipyridyl compound comprises the following structure (Ic):

wherein k and l are integers from 0 to 6, and R 8 , R 9 , R 10 , R 11 , and R 12 are each independently selected from among hydrogen or a short alkyl chain having from 1 to about 3 carbon atoms.

15. The method of claim 3 wherein the dipyridyl compound comprises the following structure (Id):

16. A composition for metalizing a via feature in a semiconductor integrated circuit device substrate comprising:

(a) a source of copper ions;

(b) a leveler compound comprising the reaction product of a dipyridyl compound and an alkylating agent, wherein the dipyridyl compound comprises structure (IIf):

(c) an accelerator; and

(d) a suppressor.

17. A composition for metalizing a via feature in a semiconductor integrated circuit device, the composition comprising:

(a) a source of copper ions;

(b) a leveler compound comprising the following structure (XIX):

wherein o is one or two; and

A is selected from among:

Y is selected from among chloride, bromide, iodide, tosyl, triflate, sulfonate, mesylate, dimethyl sulfonate, fluorosulfonate, methyl tosylate, brosylate, or nosylate; and m is an integer having a value between one and six;

(c) an accelerator; and

(d) a suppressor.

18. A composition as set forth in claim 17 wherein leveler compound comprises the following structure (XX):

19. A composition as set forth in claim 17 wherein the leveler compound comprises the following structure (XXI):