IP Library Granted Patent US 9,003,214
Granted Patent B2
US 9,003,214 · App. 13/796,677 · Granted Apr 7, 2015

Circuit, system and method for selectively turning off internal clock drivers

View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,003,214
App. No.
13/796,677
Granted
Apr 7, 2015
Kind
B2
Abstract

The present invention includes a circuit, system and method for selectively turning off internal clock drivers to reduce operating current. The present invention may be used to reduce power consumption by reducing operating current in a memory device. Operating current may be reduced by turning off internal clock drivers that deliver a clock signal during selected periods of time. According to an embodiment of clock control circuitry of the present invention, an internal clock is disabled if a no operation command is detected during periods of time when no read or write burst operation is taking place. Methods, memory devices and computer systems including the clock control circuitry and its functionality are also disclosed.

Claims (27)

1. A memory device, comprising:

a memory array; and

clock control circuitry in communication with the memory array and for receiving a system clock, the clock control circuitry comprising:

a first circuit element operable to generate a first signal indicating idle time in a memory device;

a second circuit element operable to generate a second signal indicating an absence of a read/write burst operation; and

clock gating circuitry operable to selectively gate the system clock in response to a gating signal, the gating signal generated based at least in part on the first signal and the second signal.

2. The memory device of claim 1 , wherein the second circuit element comprises a 2-input NOR gate for sensing a read/write burst command.

3. The memory device of claim 1 , wherein the clock gating circuitry comprises a 3-input NOR gate.

4. The memory device of claim 3 , wherein the 3-input NOR gate is configured to receive:

the gating signal; and

one or more delayed clock signals generated by delay circuitry.

5. The memory device of claim 1 , wherein the clock control circuitry further comprises delay circuitry for delaying the system clock to compensate for delays caused by one or more of the first circuit element and the second circuit element.

6. The memory device of claim 1 , wherein the memory array comprises a dynamic random access memory (DRAM) memory array.

7. The memory device of claim 1 , wherein the first circuit element generates the first signal based on one or more of a row-address strobe (RAS) signal, a column-address strobe (CAS) signal, and a write enable (WE) signal.

8. The memory device of claim 1 , wherein the first circuit element comprises a 3-input NAND gate operable to receive one or more command signals.

9. Clock control circuitry comprising:

a first circuit element operable to generate a first signal indicating idle time in a memory device;

a second circuit element operable to generate a second signal indicating an absence of a read/write burst operation; and

clock gating circuitry operable to selectively gate a system clock in response to a gating signal, the gating signal generated based at least in part on the first signal and the second signal.

10. The clock control circuitry of claim 9 , wherein the second circuit element comprises a 2-input NOR gate for sensing a read/write burst command.

11. The clock control circuitry of claim 9 , wherein the clock gating circuitry comprises a 3-input NOR gate.

12. The clock control circuitry of claim 11 , wherein the 3-input NOR gate is configured to receive:

the gating signal; and

one or more delayed clock signals generated by delay circuitry.

13. The clock control circuitry of claim 9 , wherein the clock control circuitry further comprises delay circuitry for delaying the system clock to compensate for delays caused by one or more of the first circuit element and the second circuit element.

14. The clock control circuitry of claim 9 , wherein the first circuit element generates the first signal based on one or more of a row-address strobe (RAS) signal, a column-address strobe (CAS) signal, and a write enable (WE) signal.

15. The clock control circuitry of claim 9 , wherein the first circuit element comprises a 3-input NAND gate operable to receive one or more command signals.

Assignments (7)
CHANGE OF NAME Recorded Sep 9, 2021
From: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
To: MOSAID TECHNOLOGIES INCORPORATED
Reel/Frame 057709/0853 →
RELEASE OF SECURITY INTEREST Recorded Nov 10, 2020
From: CPPIB CREDIT INVESTMENTS INC.
To: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
Reel/Frame 054372/0194 →
RELEASE OF U.S. PATENT AGREEMENT (FOR NON-U.S. GRANTORS) Recorded Oct 12, 2018
From: ROYAL BANK OF CANADA, AS LENDER
To: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
Reel/Frame 047645/0424 →
AMENDED AND RESTATED U.S. PATENT SECURITY AGREEMENT (FOR NON-U.S. GRANTORS) Recorded Aug 22, 2018
From: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
To: CPPIB CREDIT INVESTMENTS, INC.
Reel/Frame 046900/0136 →
U.S. PATENT SECURITY AGREEMENT (FOR NON-U.S. GRANTORS) Recorded Sep 9, 2014
From: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
To: CPPIB CREDIT INVESTMENTS INC., AS LENDER; ROYAL BANK OF CANADA, AS LENDER
Reel/Frame 033706/0367 →
CHANGE OF ADDRESS Recorded Sep 3, 2014
From: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
To: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
Reel/Frame 033678/0096 →
CHANGE OF NAME Recorded Mar 13, 2014
From: MOSAID TECHNOLOGIES INCORPORATED
To: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.
Reel/Frame 032439/0638 →