Silicon carbide substrate, semiconductor device, and SOI wafer
View Patent ↗Disclosed is a silicon carbide substrate which has less high frequency loss and excellent heat dissipating characteristics. The silicon carbide substrate (S) is provided with a first silicon carbide layer ( 1 ), which is composed of a polycrystalline silicon carbide, and a second silicon carbide layer ( 2 ), which is composed of polycrystalline silicon carbide formed on the surface of the first silicon carbide layer. The second silicon carbide layer ( 2 ) has a high-frequency loss smaller than that of the first silicon carbide layer ( 1 ), the first silicon carbide layer ( 1 ) has a thermal conductivity higher than that of the second silicon carbide layer ( 2 ), and on the surface side of the second silicon carbide layer ( 2 ), the high-frequency loss at a frequency of 20 GHz is 2 dB/mm or less, and the thermal conductivity is 200 W/mK or more.
1. A silicon carbide substrate for mounting an element operating in a high-frequency region on a surface thereof, said silicon carbide substrate comprising:
a first layer composed of polycrystalline silicon carbide; and
a second layer composed of polycrystalline silicon carbide and formed on a surface of said first layer and on the surface side of said silicon carbide substrate,
wherein said second layer has a thickness of 10 μm or more accounting for up to 20% of a total thickness of said silicon carbide substrate and has a less high-frequency loss than said first layer, and said first layer has a higher thermal conductivity than said second layer.
2. The silicon carbide substrate according to claim 1 , whose high-frequency loss at a frequency of 20 GHz is 2 dB/mm or less on a surface side of said second layer and whose thermal conductivity is 200 W/mK or more.
3. The silicon carbide substrate according to claim 1 , wherein said first layer is formed by a chemical vapor deposition process in an atmosphere containing nitrogen and said second layer is formed by the chemical vapor deposition process in an atmosphere containing no nitrogen.
4. A semiconductor device comprising:
the silicon carbide substrate according to claim 1 ; and
a semiconductor element joined to a surface of said second layer of said silicon carbide substrate.
5. An SOI wafer comprising:
the silicon carbide substrate according to claim 1 ;
an insulating layer formed on a surface of said second layer of said silicon carbide substrate; and
a silicon layer formed on a surface of said insulating layer.
6. A silicon carbide substrate for mounting an element operating in a high-frequency region on a surface thereof, said silicon carbide substrate comprising:
a first layer composed of polycrystalline silicon carbide; and
a second layer composed of polycrystalline silicon carbide and formed on a surface of said first layer and on the surface side of said silicon carbide substrate,
wherein said second layer has a higher specific resistance than said first layer and said first layer has a higher thermal conductivity than said second layer, and
wherein specific resistance of said silicon carbide substrate is 10 4 Ωcm or more on a surface side of said second layer and thermal conductivity of said silicon carbide substrate is 200W/mK or more.
7. The silicon carbide substrate according to claim 6 , wherein said first layer is formed by a chemical vapor deposition process in an atmosphere containing nitrogen and said second layer is formed by the chemical vapor deposition process in an atmosphere containing no nitrogen.
8. A semiconductor device comprising:
the silicon carbide substrate according to claim 6 ; and
a semiconductor element joined to a surface of said second layer of said silicon carbide substrate.
9. An SOI wafer comprising:
the silicon carbide substrate according to claim 6 ;
an insulating layer formed on a surface of said second layer of said silicon carbide substrate; and
a silicon layer formed on a surface of said insulating layer.