Semiconductor device and method of depositing encapsulant along sides and surface edge of semiconductor die in embedded WLCSP

1. A method of making a semiconductor device, comprising:

providing a semiconductor wafer including a plurality of semiconductor die;

forming an insulating layer over the semiconductor wafer;

removing a portion of the insulating layer along a surface edge of the semiconductor die;

forming a conductive layer over the semiconductor wafer;

singulating the semiconductor wafer into the plurality of semiconductor die;

depositing an encapsulant over the semiconductor die to cover a side of the semiconductor die and the surface edge of the semiconductor die after singulating the semiconductor wafer; and

forming a conductive bump on the conductive layer after depositing the encapsulant.

2. The method of claim 1 , further including:

providing a carrier;

disposing the semiconductor die over the carrier with the surface edge of the semiconductor die offset from the carrier;

depositing the encapsulant over the semiconductor die and carrier to cover the side of the semiconductor die and the surface edge of the semiconductor die; and

removing the carrier.

3. The method of claim 1 , further including depositing the encapsulant after forming the insulating layer.

4. The method of claim 1 , further including removing the portion of the insulating layer by laser direct ablation.

5. A method of making a semiconductor device, comprising:

providing a semiconductor die;

forming an insulating layer over the semiconductor die;

removing a portion of the insulating layer along a surface edge of the semiconductor die; and

depositing an encapsulant over the semiconductor die to cover a side of the semiconductor die and the surface edge of the semiconductor die.

6. The method of claim 5 , further including:

providing a carrier;

disposing the semiconductor die over the carrier with the surface of the semiconductor die offset from the carrier;

depositing the encapsulant over the semiconductor die and carrier to cover the side and surface edge of the semiconductor die; and

removing the carrier.

7. The method of claim 5 , further including forming the insulating layer over the semiconductor die at a wafer level.

8. The method of claim 5 , further including forming a conductive layer over the semiconductor die.

9. The method of claim 8 , further including forming an interconnect structure over the conductive layer.

10. The method of claim 8 , further including depositing the encapsulant over the semiconductor die after forming the conductive layer.

11. The method of claim 5 , further including removing the portion of the insulating layer by laser direct ablation.

12. A method of making a semiconductor device, comprising:

providing a substrate;

disposing a semiconductor die over the substrate;

depositing a mold underfill material between the semiconductor die and substrate; and

depositing an encapsulant over a side surface of the semiconductor die and a side surface of the substrate.

13. The method of claim 12 , wherein the substrate includes conductive traces for vertical and lateral interconnect.

14. The method of claim 12 , further including disposing a conductive bump over the substrate after depositing the encapsulant.

15. The method of claim 12 , further including removing a portion of the encapsulant by laser direct ablation (LDA).

16. A method of making a semiconductor device, comprising:

providing a semiconductor die;

forming an insulating layer over the semiconductor die;

forming a conductive layer over the semiconductor die;

depositing an encapsulant over the semiconductor die to cover a side of the semiconductor die after forming the conductive layer; and

disposing a conductive bump directly on the conductive layer after depositing the encapsulant.

17. The method of claim 16 , further including:

providing a carrier;

disposing the semiconductor die over the carrier with a surface of the semiconductor die offset from the carrier;

depositing the encapsulant over the semiconductor die and carrier to cover the side of the semiconductor die and a portion of the surface of the semiconductor die; and

removing the carrier.

18. The method of claim 16 , further including forming the insulating layer over the semiconductor die at a wafer level.

19. The method of claim 16 , further including removing a portion of the insulating layer along a surface edge of the semiconductor die.

20. The method of claim 19 , further including removing the portion of the insulating layer prior to depositing the encapsulant.

21. A method of making a semiconductor device, comprising:

providing a semiconductor die;

forming an under bump metallization (UBM) over the semiconductor die;

depositing an encapsulant over a side of the semiconductor die after forming the UBM; and

forming a conductive bump over the UBM after depositing the encapsulant.

22. The method of claim 21 , further including:

providing a carrier;

disposing the semiconductor die over the carrier with a surface of the semiconductor die offset from the carrier;

depositing the encapsulant over the semiconductor die and carrier; and

removing the carrier.

23. The method of claim 21 , further including forming:

an insulating layer over the semiconductor die; and

removing a portion of the insulating layer along a surface edge of the semiconductor die.