Semiconductor package and method of forming semiconductor package
View Patent ↗A semiconductor package includes a semiconductor substrate which includes a first connection terminal electrically connected to a wiring for signal transfer. The semiconductor package may include a semiconductor support substrate which may be bonded to the semiconductor substrate such that a second connection terminal and the first connection terminal are connected to face each other, and has a through via exposing the second connection terminal.
1. A method comprising:
forming a first connection terminal configured for signal transfer by electrical connection to a wiring in a top portion of a semiconductor substrate;
forming a second connection terminal on a semiconductor support substrate;
bonding the semiconductor substrate and the semiconductor support substrate such that the first connection terminal and a second connection terminal are bonded to each other;
after bonding the semiconductor substrate and the semiconductor support substrate, forming a planarization layer, color filters, and microlenses on the semiconductor substrate, forming an adhesive layer on the planarization layer and an outer shell of the color filter and the microlenses, and forming a glass substrate over the color filters and microlenses, wherein the adhesive layer supports the glass substrate;
after forming the glass substrate over the color filters and microlenses, forming a through via in the semiconductor support substrate exposing the second connection terminal; and
filling or depositing a conductive material in the through via, the conductive material contacting the second connection terminal.
2. The method according to claim 1 , wherein the conductive material comprises a metal material.
3. The method according to claim 2 , comprising depositing the conductive material in the through via, and the method further comprises forming solder balls on the conductive material in the through via after depositing the conductive material.
4. The method according to claim 3 , wherein the solder balls are formed on the conductive material.
5. The method according to claim 4 , further comprising bonding the semiconductor support substrate and a printed circuit board to electrically connect the first connection terminal, the second connection terminal, and the printed circuit board through the solder balls.
6. The method according to claim 1 , wherein the semiconductor substrate is an image sensor substrate.
7. The method according to claim 1 , wherein the semiconductor substrate includes a semiconductor chip.
8. The method according to claim 1 , wherein forming the second connection terminal comprises a damascene process.
9. The method of claim 1 , further comprising bonding the semiconductor support substrate and a printed circuit board to electrically connect the first connection terminal, the second connection terminal, and the printed circuit board through the conductive material.
10. The method according to claim 9 , wherein the conductive material includes solder balls.
11. The method according to claim 10 , wherein:
the solder balls comprise a first solder ball and a second solder ball; and
the first connection terminal, the second connection terminal, and the printed circuit board are electrically connected by the first solder ball and the second solder ball.
12. The method of claim 1 , wherein the conductive material is filled or deposited in the through via after the through via is formed in the semiconductor support substrate.
13. The method according to claim 12 , wherein the conductive material is filled or deposited in the through via by electroplating.
14. The method according to claim 1 , wherein the conductive material includes solder balls.
15. A method comprising:
forming a first connection terminal configured for signal transfer by electrical connection to a wiring in a top portion of a semiconductor substrate;
forming a via in a semiconductor support substrate;
filling a conductive material in the via;
after filling the conductive material in the via, forming a second connection terminal on the semiconductor support substrate, the second connection terminal contacting the conductive material;
after forming the second connection terminal on the semiconductor support substrate, bonding the semiconductor substrate and the semiconductor support substrate such that the first connection terminal and a second connection terminal are bonded to each other;
after bonding the semiconductor substrate and the semiconductor support substrate, forming a planarization layer, color filters, and microlenses on the semiconductor substrate, forming an adhesive layer on the planarization layer and an outer shell of the color filter and the microlenses, and forming a glass substrate over the color filters and microlenses, wherein the adhesive layer supports the glass substrate.
16. The method according to claim 15 , wherein forming the second connection terminal on the semiconductor support substrate forms an inner second connection terminal, and filling the conductive material in the through via also forms an outer second connection terminal on the semiconductor support substrate at an end of the conductive material opposite from the inner second connection terminal.
17. The method according to claim 16 , wherein forming the through via, filling the conductive material in the through via, and forming the outer second connection terminal comprises a dual damascene process.
18. The method according to claim 15 , wherein the semiconductor substrate is an image sensor substrate.
19. The method according to claim 15 , further comprising bonding the semiconductor support substrate and a printed circuit board to electrically connect the first connection terminal, the second connection terminal, and the printed circuit board through the conductive material.