Silicon-based electronics with disabling feature
View Patent ↗Silicon-based circuitry is dissolved or otherwise disabled in a controlled manner by reactive materials provided beneath the insulating layer on which the circuitry is formed. Heat and/or light induced acid generating materials are provided for corroding one or more circuitry components. Additionally and/or alternatively, gas-producing materials are deposited in compartments beneath the insulating layer. The gas-producing materials cause pressure to rise within the compartments, damaging the chip. Chemical reactions within the chip may be facilitated by heating elements and/or light generating elements embedded within the chip and actuated by triggering circuits.
1. A structure comprising:
a semiconductor layer comprising silicon;
an electrically insulating layer having a top surface and a bottom surface, the semiconductor layer adjoining the top surface of the insulating layer;
electronic circuitry including a plurality of electrical components on the semiconductor layer;
a chemically reactive layer adjoining the bottom surface of the insulating layer, the chemically reactive layer being corrosive to one or more of the electrical components comprising the electronic circuitry or capable of generating a material corrosive to at least one of the electrical components upon activation, and
an encapsulation layer over the chemically reactive layer, and
wherein the structure further includes a triggering circuit on the semiconductor layer and at least one of a heating element and a light emitting element electrically connected to the triggering circuit for activating the chemically reactive layer.
2. The structure of claim 1 , wherein the electronic circuitry comprises CMOS circuitry.
3. The structure of claim 2 , further including a heating element electrically connected to the triggering circuit, the heating element being comprised of reactive materials capable of causing an exothermic reaction for heating the chemically reactive layer.
4. The structure of claim 1 , further including a dielectric layer on the insulating layer, the electronic circuitry and a plurality of electrical connectors being embedded within the dielectric layer, the chemically reactive layer being comprised of one or more heat and/or light activated acid generating materials for generating one or more acids corrosive to one or more of the electrical components comprising the electronic circuitry.
5. The structure of claim 4 , further including one or more plugs comprising sacrificial material extending through the insulating layer, at least one of the one or more acids being more corrosive to the sacrificial material than to the insulating layer.
6. A structure comprising:
a semiconductor layer comprising silicon;
an electrically insulating layer having a top surface and a bottom surface, the semiconductor layer adjoining the top surface of the insulating layer;
electronic circuitry including a plurality of electrical components on the semiconductor layer;
a chemically reactive layer sensitive to temperature and/or light adjoining the bottom surface of the insulating layer, the chemically reactive layer generating gas when activated;
one or more compartments adjoining the insulating layer, the chemically reactive layer being within the one or more compartments, and
wherein the structure further includes a triggering circuit on the semiconductor layer and at least one of a heating element or a light emitting element electrically connected to the triggering circuit for activating the chemically reactive layer.
7. The structure of claim 6 , wherein the electronic circuitry comprises CMOS circuitry.
8. The structure of claim 6 , further including the heating element which is comprised of reactive materials capable of causing an exothermic reaction.
9. The structure of claim 6 , further including an encapsulation layer, wherein the compartments are comprised of a plurality of highly doped silicon regions adjoining the insulating layer and within the encapsulation layer.
10. The structure of claim 7 , wherein the chemically reactive layer is light sensitive, further including a light emitting element electrically connected to the triggering circuit for illuminating the chemically reactive layer.