IP Library Granted Patent US 8,962,389
Granted Patent B2
US 8,962,389 · App. 13/906,161 · Granted Feb 24, 2015

Microelectronic packages including patterned die attach material and methods for the fabrication thereof

Inventors: William C. Stermer, Jr. (Chandler, AZ); Philip H. Bowles (Fountain Hills, AZ); Alan J. Magnus (Gilbert, AZ)
Assignee: Freescale Semiconductor, Inc.
B81C1/00261B81B3/0018B81C1/00158
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Quick Facts
Patent No.
US 8,962,389
App. No.
13/906,161
Granted
Feb 24, 2015
Kind
B2
Abstract

Embodiments of microelectronic packages and methods for fabricating microelectronic packages are provided. In one embodiment, the fabrication method includes printing a patterned die attach material onto the backside of a wafer including an array of non-singulated microelectronic die each having an interior keep-out area, such as a central keep-out area. The die attach material, such as a B-stage epoxy, is printed onto the wafer in a predetermined pattern such that the die attach material does not encroaching into the interior keep-out areas. The wafer is singulated to produce singulated microelectronic die each including a layer of die attach material. The singulated microelectronic die are then placed onto leadframes or other package substrates with the die attach material contacting the package substrates. The layer of die attach material is then fully cured to adhere an outer peripheral portion of the singulated microelectronic die to its package substrate.

Claims (32)

1. A method for fabricating a plurality of microelectronic packages, the method comprising:

printing a patterned die attach material onto the backside of a wafer including an array of non-singulated microelectronic die each having an interior keep-out area, the patterned die attach material not encroaching into the interior keep-out areas of the array of non-singulated microelectronic die;

after printing the patterned die attach material onto the backside of the wafer, singulating the wafer to separate the plurality of non-singulated microelectronic die and produce a plurality of singulated microelectronic die each including a layer of die attach material;

placing each of the plurality of singulated microelectronic die on a package substrate with the layer of die attach material contacting the package substrate; and

fully curing the layer of die attach material to adhere an outer peripheral portion of at least one of the plurality of singulated microelectronic die to its package substrate.

2. The method of claim 1 wherein printing comprises:

positioning a patterned screen over the backside of the wafer; and

applying the die attach material through openings in the patterned screen and onto the array of non-singulated microelectronic die such that the die attach material does not encroach into the interior keep-out areas of the array of non-singulated microelectronic die.

3. The method of claim 1 wherein printing comprises printing a patterned die attach material onto the backside of a wafer including an array of non-singulated microelectronic die each having a central keep-out area, the patterned die attach material surrounding, but not encroaching into the central keep-out areas of the array of non-singulated microelectronic die.

4. The method of claim 1 further comprising partially curing the patterned die attach material after printing the patterned die attach material onto the backside of the wafer and prior to singulation thereof.

5. The method of claim 4 wherein the patterned die attach material comprises a B-stage epoxy, and wherein partially curing comprising performing a B-stage cure of the B-stage epoxy after printing the patterned die attach material onto the backside of the wafer and prior to singulation thereof.

6. The method of claim 1 further comprising overmolding each of the singulated microelectronic die with an encapsulant after fully curing the layer of die attach material.

7. The method of claim 1 wherein the array of microelectronic die each comprise a microclectromechanical systems (“MEMS”) device having a transducer structure, and wherein the interior keep-out area of each microelectronic die aligns with its respective transducer structure, as taken along an axis substantially orthogonal to the upper surface of the microelectronic die.

8. The method of claim 1 wherein at least a first of the microelectronic die included in the array of microelectronic die comprises a stress relief trench formed in the backside of the microelectronic die within its interior keep-out area.

9. The method of claim 8 wherein the first microelectronic die further comprises a backside cavity formed in the backside of the microelectronic die within the interior keep-out area.

10. The method of claim 9 wherein the stress relief trench circumscribes the backside cavity.

11. The method of claim 9 wherein the first microelectronic die comprises a pressure sensor including a diaphragm structure exposed through the backside cavity.

12. The method of claim 9 wherein the first microelectronic die is placed on the die flag of a leadframe such that the backside cavity aligns with an opening provided in the die flag, and wherein the die attach material is laterally recessed from the opening in the die flag.

13. The method of claim 1 wherein singulation of the wafer comprises:

sawing the wafer along a number of saw lanes while applying a liquid coolant over the wafer to separate the plurality of non-singulated microelectronic die and produce a plurality of singulated microelectronic die each including a layer of die attach material; and

positioning dicing tape over the saw lanes and forming a seal with the plurality of singulated microelectronic die to prevent the ingress of debris and the liquid coolant into the adhesive keep-out area during sawing.

14. The method of claim 13 wherein, during printing of the patterned die attach material, the patterned die attach material is applied over at least a portion of the saw lanes.

15. The method of claim 1 wherein, during printing of the patterned die attach material, the patterned die attach material is printed to have recesses located adjacent the corners of the central-keep-out area.

16. The method of claim 1 wherein placing comprises placing at least one of the plurality of singulated microelectronic die on the die flag of a lead frame with the layer of die attach material contacting the die flag, while heating the die flag.

17. A method for fabricating a plurality of microelectronic packages, the method comprising:

attaching a die to a package substrate, the die comprising:

a die body formed by processing and singulation of a wafer;

a layer of adhesive preprinted over the die body prior to singulation of the wafer; and

a controlled void formed in the adhesive layer underneath an interior portion of the die body;

encapsulating the die and the package substrate after attaching the die to the package substrate;

wherein the die is attached to the package substrate by placing the layer of adhesive in contact with the package substrate and fully curing the layer of adhesive.

18. The method of claim 17 wherein the adhesive is partially cured prior to singulation of the wafer and attachment of the die to the package substrate.

Assignments (17)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 23, 2026
From: NXP USA, INC.
To: STMICROELECTRONICS INTERNATIONAL N.V.
Reel/Frame 075220/0239 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050744/0097 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE NATURE OF CONVEYANCE PREVIOUSLY RECORDED AT REEL: 040632 FRAME: 0001. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER AND CHANGE OF NAME. Recorded Sep 21, 2017
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
Reel/Frame 044209/0047 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
CHANGE OF NAME Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NXP USA, INC.
Reel/Frame 040632/0001 →
SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039138/0001 →
ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 037518/0292 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0844 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0819 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0804 →
SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 031591/0266 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Sep 20, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 031248/0750 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Sep 20, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 031248/0698 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Sep 20, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 031248/0627 →
SUPPLEMENT TO IP SECURITY AGREEMENT Recorded Sep 20, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
Reel/Frame 031248/0510 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 30, 2013
From: BOWLES, PHILIP H.; MAGNUS, ALAN J.; STERMER, BILL, JR.
To: FREESCALE SEMICONDUCTOR INC.
Reel/Frame 030517/0732 →
Continuity (1)
Related Publication 20140353772A1 · Dec 4, 2014