Distorting donor wafer to corresponding distortion of host wafer

1. A method comprising:

determining planar distortions of the bonding surface of a host wafer;

mounting a donor wafer on a bonding chuck by a plurality of fixation points, the bonding chuck comprising multiple zones capable of movement relative to each other; and

distorting the bonding surface of the donor wafer by moving the zones of the bonding chuck relative to each other to cause distortions of the bonding surface of the donor wafer such that the distortions of the donor wafer bonding surface correspond to the determined planar distortions of the host wafer bonding surface.

2. A method in accordance with claim 1 , further comprising bonding the donor wafer and the host wafer after the step of distorting the donor wafer bonding surface.

3. A method in accordance with claim 1 , wherein determining the planar distortions of the bonding surface of a host wafer comprises determining the positions of a plurality of distortion markers in the host wafer.

4. A method in accordance with claim 3 , wherein each distortion marker is one of: a location on an alignment mark in the host wafer; and a location on a structure in the host wafer.

5. A method in accordance with claim 1 , wherein:

the planar distortions of the bonding surface of the host wafer include distortions in the outwardly radial direction; and

the multiple zones comprise a central circular zone and one or more contiguous circular annular zones.

6. A method in accordance with claim 1 , wherein distorting the bonding surface of the donor wafer is based on one or more of: the degree to which a surface deformation is elastic; the degree to which a surface deformation is plastic; and hysteresis effects in the time it takes for elastic deformations of the donor wafer surface to recover.