Lead-free solder bump bonding structure
According to a lead-free solder bump bonding structure, by causing the interface (IMC interface) of the intermetallic compound layer at a lead-free-solder-bump side to have scallop shapes of equal to or less than 0.02 [portions/μm] without forming in advance an Ni layer as a barrier layer on the surfaces of respective Cu electrodes of first and second electronic components like conventional technologies, a Cu diffusion can be inhibited, thereby inhibiting an occurrence of an electromigration. Hence, the burden at the time of manufacturing can be reduced by what corresponds to an omission of the formation process of the Ni layer as a barrier layer on the Cu electrode surfaces, and thus a lead-free solder bump bonding structure can be provided which reduces a burden at the time of manufacturing in comparison with conventional technologies and which can inhibit an occurrence of an electromigration.
1. A lead-free solder bump bonding structure comprising:
a lead-free solder bump that bonds a Cu electrode of a first electronic component and a Cu electrode of a second electronic component, a large current with a current density of equal to or greater than 0.7×10 3 [A/cm 2 ] flowing between the first electronic component and the second electronic component through the lead-free solder bump,
the lead-free solder bump comprising an alloy containing Sn as a primary component and inevitable impurities, and forming intermetallic compound layers in a boundary with the Cu electrode of the first electronic component and in a boundary with the Cu electrode of the second electronic component, and
the intermetallic compound layer having scallop shapes with a difference in height that is equal to or greater than 4 [μm] between a bottom portion which is equal to or smaller than 30% of an average thickness of the intermetallic compound layer, and a peak portion adjacent to the bottom portion, at an interface with the lead-free solder bump, the number of scallop shapes in the intermetallic compound layer being equal to or less than 0.02 [portions/μm].
2. The lead-free solder bump bonding structure according to claim 1 , wherein the lead-free solder bump contains at least one kind of followings: Ni; Co; and Fe at a total of 0.005 to 0.2 mass %.
3. The lead-free solder bump bonding structure according to claim 1 , wherein the lead-free solder bump contains Ag of 0 to 5 mass % and Cu of 0 to 2 mass %.
4. The lead-free solder bump bonding structure according to claim 1 , wherein the lead-free solder bump further contains at least one kind of followings: P; Mg; and Ge at a total of 0 to 0.01 mass %.
5. The lead-free solder bump bonding structure according to claim 1 , wherein the lead-free solder bump contains at least one kind of followings: Pd; Mn, Zn; Al; Sb; and In, and, Pd, Mn, and Al being 0 to 1 mass %, Zn being 0 to 10 mass %, Sb being 0 to 3 mass %, and In being 0 to 7 mass %.