Granted Patent B2

US 9,269,582 · App. 14/006,662 · Granted Feb 23, 2016

Abstract

Claims (43)

1. An on implantation method, comprising ionizing a dopant source composition to form dopant ions, and implanting the dopant ions in a substrate, wherein the dopant source composition comprises a composition selected from the group consisting of:

(i) diphosphorus oxyhalides;

(ii) diarsenic halides and oxyhalides;

(iii) substituted phosphanes of the formula P n H x R y , wherein R is selected from alkyl, alkoxy, O, NR and other functional groups containing H, C, O and N atoms, n is an integer having a value of from 2 to 22, x is an integer having a value of from 2 to 22, and y is an integer having a value of from 1 to 22;

(iv) substituted arsines of the formula As n H x R y , wherein R is selected from alkyl, O, NR and other functional groups containing H, C, O and N atoms, n is an integer having a value of from 2 to 22, x is an integer having a value of from 2 to 22, and y is an integer having a value of from 1 to 22;

(v) diphosphanes of the formula R 2 P—PR′ 2 wherein R 2 and R′ 2 are each independently selected from C 1-6 alkyls, aryls, and other functional groups containing H, C, O and N atoms;

(vi) diarsanes of the formula R 2 As—AsR′ 2 wherein R 2 and R′ 2 are each independently selected from C 1-6 alkyls, aryls, and other functional groups containing H, C, O and N atoms;

(vii) phosphorus source compounds with P—P bonds, produced as reaction products of phosphorus halides and phosphorus hydrides; and

(vii) arsenic source compounds with As—As bonds, produced as reaction products of arsenic halides and arsenic hydrides.

2. The ion implantation method of claim 1 , wherein the dopant source composition comprises a composition selected from the group consisting of diphosphorus oxyhalides.

3. The ion implantation method of claim 1 , wherein the dopant source composition comprises a composition selected from the group consisting of diarsenic halides and oxyhalides.

4. The ion implantation method of claim 1 , wherein the dopant source composition comprises a composition selected from the group consisting of substituted phosphanes of the formula P n H x R y , wherein R is selected from alkyl, alkoxy, O, NR and other functional groups containing H, C, O and N atoms, n is an integer having a value of from 2 to 22, x is an integer having a value of from 2 to 22, and y is an integer having a value of from 1 to 22.

5. The ion implantation method of claim 1 , wherein the dopant source composition comprises a composition selected from the group consisting of substituted arsines of the formula As n H x R y , wherein R is selected from alkyl, O, NR and other functional groups containing H, C, O and N atoms, n is an integer having a value of from 2 to 22, x is an integer having a value of from 2 to 22, and y is an integer having a value of from 1 to 22.

6. The ion implantation method of claim 1 , wherein the dopant source composition comprises a composition selected from the group consisting of diphosphanes of the formula R 2 P—PR′ 2 wherein R 2 and R′ 2 are each independently selected from C 16 alkyls, aryls, and other functional groups containing H, C, O and N atoms.

7. The ion implantation method of claim 1 , wherein the dopant source composition comprises a composition selected from the group consisting of diarsanes of the formula R 2 As—AsR′ 2 wherein R 2 and R′ 2 are each independently selected from C 16 alkyls, aryls, and other functional groups containing H, C, O and N atoms.

8. The ion implantation method of claim 1 , wherein the dopant source composition comprises a composition selected from the group consisting of phosphorus source compounds with P—P bonds, produced as reaction products of phosphorus halides and phosphorus hydrides.

9. The ion implantation method of claim 1 , wherein the dopant source composition comprises a composition selected from the group consisting of arsenic source compounds with As—As bonds, produces reaction products of arsenic halides and arsenic hydrides.

10. The ion implantation of claim 1 , wherein the dopant source composition comprises a composition selected from the group consisting of As 2 I 4 and As 2 F 4 .

11. The ion implantation method of claim 1 , wherein the dopant source composition comprises As 2 Cl 2 F 2 .

12. The ion implantation method of claim 1 , wherein the dopant source composition is ionized under ionizing conditions forming an ion beam, and the ion beam is accelerated toward the substrate.

13. The ion implantation method of claim 1 , wherein the dopant source composition is flowed to an ion source for said ionizing, in a carrier gas comprising a gas selected from the group consisting of argon, xenon, and helium.

14. An ion implantation method, comprising ionizing a dopant source composition to form dopant ions and implanting the dopant ions in a substrate, wherein the dopant source composition comprises a composition selected from the group consisting of:

(i) phosphorus hydrides of the formula P n H x wherein n is an integer having a value of from 2 to 22, x is an integer having a value of from 2 to 11, and x is not 5 when n is 2;

(ii) arsenic hydrides of the formula As n H y wherein n is an integer having a value of from 2 to 5, and y is an integer having a value of from 2 to 10;

(iii) phosphorus and diphosphorus halides and oxyhalides, excluding PF 3 ;

(iv) arsenic and diarsenic halides and oxyhalides, excluding AsF 5 ;

(v) substituted phosphanes of the formula P n H x R y , wherein R is selected from alkyl alkoxy, O, NR and other functional groups containing H, C, O and N atoms n is an integer having a value of from 2 to 22 x is an integer having a value of from 2 to 22 and y is an integer having a value of from 1 to 22;

(vi) substituted arsines of the formula As n H x R y , wherein R is selected from alkyl O, NR and other functional groups containing H, C, O and N atoms n is an integer having a value of from 2 to 22, x is an integer having a value of from 2 to 22, and y is an integer having a value of from 1 to 22;

(vii) of the formula R 2 P—PR′ 2 wherein R 2 and R′ 2 are each independently selected from C 1-6 alkyls, aryls, and other functional groups containing H, C, O and N atoms;

(viii) diarsanes of the formula R 2 As—AsR′ 2 wherein R 2 and R′ 2 are each independently selected from C 1-6 alkyls, aryls, and other functional groups containing H, C, O and N atoms;

(ix) phosphorus source compounds in combination with reducing agents that can induce in situ formation of product compounds with P—P bonds;

(x) source compounds in combination with reducing agents that can induce in situ formation of product compounds with As—As bonds;

(xi) phosphorus source compounds with P—P bonds produced as reaction products of phosphorus halides and phosphorus hydrides;

(xii) arsenic source compounds with As—As bonds, produces reaction products of arsenic halides and arsenic hydrides;

(xiii) poly-phosphorus 6- and 7-member ring compounds cluster halides and caged compounds; and

(xiv) poly-arsenic 6- and 7-member ring compounds, cluster halides and caged compounds wherein said dopant source composition is isotopically enriched beyond a natural abundance composition.

15. An ion implantation method, comprising ionizing a dopant source composition to form dopant ions, and implanting the dopant ions in a substrate, wherein the dopant source composition comprises a composition selected from the group consisting of:

substituted phosphanes of the formula P n H x R y , wherein R is selected from alkyl, alkoxy, O, NR and other functional groups containing H, C, O and N atoms, n is an integer having a value of from 2 to 22, x is an integer having a value of from 2 to 22, and y is an integer having a value of from 1 to 22;

substituted arsines of the formula As n H x R y , wherein R is selected from alkyl, O, NR and other functional groups containing H, C, O and N atoms, n is an integer having a value of from 2 to 22, x is an integer having a value of from 2 to 22, and y is an integer having a value of from 1 to 22;

diphosphanes of the formula R 2 P—PR′ 2 wherein R 2 and R′ 2 are each independently selected from C 1-6 alkyls, aryls, and other functional groups containing H, C, O and N atoms;

diarsanes of the formula R 2 As—AsR′ 2 wherein R 2 and R′ 2 are each independently selected from C 1-6 alkyls, aryls, and other functional groups containing H, C, O and N atoms;

phosphorus source compounds with P—P bonds, produced as reaction products of phosphorus halides and phosphorus hydrides; and

arsenic source compounds with As—As bonds, produced as reaction products of arsenic halides and arsenic hydrides.

Assignments (9)