Method for dicing a substrate with back metal
View Patent ↗The present invention provides a method for dicing a substrate with back metal, the method comprising the following steps. The substrate is provided with a first surface and a second surface wherein the second surface is opposed to the first surface. A mask layer is provided on the first surface of the substrate and a thin film layer is provided on the second surface of the substrate. The first surface of the substrate is diced through the mask layer to expose the thin film layer on the second surface of the substrate. A fluid from a fluid jet is applied to the thin film layer on the second surface of the substrate after the thin film layer has been exposed by the dicing step.
1. A method for dicing a substrate with a thin film layer comprising metal, the method comprising:
providing a process chamber having a wall;
providing a plasma source adjacent to the wall of the process chamber;
providing a substrate support within the process chamber;
providing the substrate having a first surface and a second surface, said second surface being opposite to said first surface, a mask layer on said first surface of the substrate, the thin film layer on said second surface of the substrate;
placing the substrate onto said substrate support;
generating a plasma using the plasma source;
etching said first surface of the substrate through said mask layer using the generated plasma, the etching step exposing said thin film layer on said second surface of the substrate; and
applying a fluid from a fluid jet to said thin film layer on said second surface of the substrate after said thin film layer has been exposed by the etching step, said fluid jet being pulsed during the application of said fluid to said thin film layer, said pulsing of the fluid jet being varied based on a jet pressure.
2. The method according to claim 1 wherein said pulsing of the fluid jet being varied based on a flow rate of said fluid being dispensed from said fluid jet.
3. The method according to claim 1 wherein said fluid from said fluid jet being dispensed asymmetrically during the application of said fluid to said thin film layer.
4. The method according to claim 1 wherein said droplets further comprising a diameter, said diameter of less than one mm.
5. The method according to claim 1 wherein the etching step leaves a portion of said thin film layer.
6. The method according to claim 1 wherein the etching step being selective to said thin film layer.
7. The method according to claim 1 further comprising exposing said thin film layer from said first surface.
8. A method for dicing a substrate, the method comprising:
providing a process chamber having a wall;
providing a plasma source adjacent to the wall of the process chamber;
providing a work piece support within the process chamber;
providing the substrate having a first surface and a second surface, said second surface being opposite to said first surface, a mask layer on said first surface of the substrate, and a thin film layer comprising metal on said second surface of the substrate;
placing a work piece onto said work piece support, said work piece having a support film, a frame and the substrate;
generating a plasma using the plasma source;
etching said first surface of the substrate through said mask layer using the generated plasma, the etching step exposing said thin film layer on said second surface of the substrate; and
applying a fluid from a fluid jet to said thin film layer on said second surface of the substrate after said thin film layer has been exposed by the etching step, said fluid jet being pulsed during the application of said fluid to said thin film layer, said pulsing of the fluid jet being varied based on a jet pressure.
9. The method according to claim 8 wherein being said pulsing of the fluid jet being varied based on a flow rate of said fluid being dispensed from said fluid jet.
10. The method according to claim 8 wherein said fluid from said fluid jet being dispensed asymmetrically during the application of said fluid to said thin film layer.
11. The method according to claim 8 wherein droplets further comprising a diameter, said diameter of less than one mm.
12. The method according to claim 8 wherein the etching step leaves a portion of said thin film layer.
13. The method according to claim 8 wherein the etching step being selective to said thin film layer.
14. The method according to claim 8 further comprising exposing said thin film layer from said first surface.
15. A method for dicing a substrate with a thin film layer comprising metal, the method comprising:
providing a process chamber having a wall;
providing a plasma source adjacent to the wall of the process chamber;
providing a substrate support within the process chamber;
providing the substrate having a first surface and a second surface, said second surface being opposite to said first surface, a mask layer on said first surface of the substrate, the thin film layer on said second surface of the substrate;
placing the substrate onto said substrate support;
generating a plasma using the plasma source;
etching said first surface of the substrate through said mask layer using the generated plasma, the etching step exposing said thin film layer on said second surface of the substrate; and
applying a fluid from a fluid jet to said thin film layer on said second surface of the substrate after said thin film layer has been exposed by the etching step, said fluid from said fluid jet being expressed at a nearly mono-disperse angle, said fluid jet being pulsed during the application of said fluid to said thin film layer, said pulsing of the fluid jet being varied based on a jet pressure.