Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus

1. A method of manufacturing a semiconductor device, the method comprising forming an oxycarbonitride film on a substrate by performing a cycle a predetermined number of times, the cycle including:

(a) performing a set a predetermined number of times, the set including: (a-1) supplying a gas containing an element to the substrate; (a-2) supplying a carbon-containing gas to the substrate; and (a-3) supplying a nitrogen-containing gas to the substrate; and

(b) supplying an oxygen-containing gas to the substrate,

wherein the steps (a-1) through (a-3) are non-simultaneously performed, and the steps (a) and (b) are non-simultaneously performed.

2. The method of claim 1 , wherein the step (a-1) comprises supplying the gas containing the element to form a layer containing the element having a thickness ranging from less than one atomic layer to several atomic layers.

3. The method of claim 1 , wherein the step (a-1) comprises supplying the gas containing the element to form a continuous layer containing the element, a discontinuous layer containing the element or a layer formed by overlaying the continuous layer and the discontinuous layer.

4. The method of claim 1 , wherein the step (a-1) comprises supplying the gas containing the element to form a deposition layer by deposition of the element, and the deposition layer comprises a continuous deposition layer containing the element, a discontinuous deposition layer containing the element or a layer formed by overlaying the continuous deposition layer and the discontinuous deposition layer.

5. The method of claim 1 , wherein the step (a-1) comprises supplying the gas containing the element to form a continuous chemical adsorption layer of the gas containing the element or a discontinuous chemical adsorption layer of the gas containing the element.

6. The method of claim 1 , wherein the step (a-2) comprises supplying the carbon-containing gas to form a discontinuous chemical adsorption layer of the carbon-containing gas.

7. The method of claim 1 , wherein the step (a-3) comprises supplying the nitrogen-containing gas to thermally nitride a layer formed on the substrate under a condition where a nitridation reaction of the layer by the nitrogen-containing gas is unsaturated.

8. The method of claim 1 , wherein the step (b) comprises supplying the oxygen-containing gas to thermally oxidize a layer formed on the substrate under a condition where an oxidation reaction of the layer by the oxygen-containing gas is unsaturated.

9. The method of claim 1 , wherein each of the steps (a-1), (a-2), (a-3) and (b) is performed under non-plasma condition.

10. The method of claim 1 , wherein each of the steps (a-1), (a-2), (a-3) and (b) comprises supplying respective gas in thermally activated state.

11. The method of claim 1 , wherein each of the steps (a-1), (a-2), (a-3) and (b) is performed with the substrate accommodated in a process vessel, and a composition of the oxycarbonitride film is adjusted by controlling an inner pressure of the process vessel, or by controlling the inner pressure and a gas supply time in at least one of the steps (a), (b), (c) and (d).

12. The method of claim 1 , wherein each of the steps (a-1), (a-2), (a-3) and (b) is performed with the substrate accommodated in a process vessel, and concentration of at least one of the element, carbon, nitrogen and oxygen in the oxycarbonitride film is adjusted by controlling an inner pressure of the process vessel, or by controlling the inner pressure and a gas supply time in at least one of the steps (a-1), (a-2), (a-3) and (b).

13. The method of claim 1 , wherein the element includes a semiconductor element or a metal element.

14. The method of claim 1 , wherein the element includes silicon.

15. A method of processing a substrate, the method comprising forming an oxycarbonitride film on a substrate by performing a cycle a predetermined number of times, the cycle including:

(a) performing a set a predetermined number of times, the set including: (a-1) supplying a gas containing an element to the substrate; (a-2) supplying a carbon-containing gas to the substrate; and (a-3) supplying a nitrogen-containing gas to the substrate; and

(b) supplying an oxygen-containing gas to the substrate,

wherein the steps (a-1) through (a-3) are non-simultaneously performed, and the steps (a) and (b) are non-simultaneously performed.

16. The method of claim 1 , wherein the steps (a-1) through (a-3) and (b) are performed separately.

17. The method of claim 1 , wherein the steps (a-1) through (a-3) and (b) are performed without mixing the gas containing the element, the carbon-containing gas, the nitrogen-containing gas and the oxygen-containing gas with one another.

18. The method of claim 1 , wherein the steps (a-1) through (a-3) and (b) are performed separately by performing gas substitution processes between the steps (a-1) and (a-2), the steps (a-2) and (a-3), the steps (a-3) and (b) and the steps (b) and (a-1).

19. A method of manufacturing a semiconductor device, the method comprising forming an oxycarbonitride film on a substrate by performing a cycle a predetermined number of times, the cycle including:

(a) performing a set a predetermined number of times, the set including: (a-1) supplying a gas containing an element to the substrate; (a-2) supplying a carbon-containing gas to the substrate; (a-3) supplying the gas containing the element to the substrate; and (a-4) supplying a nitrogen-containing gas to the substrate; and

(b) supplying an oxygen-containing gas to the substrate,

wherein the steps (a-1) through (a-4) are non-simultaneously performed in order, and the steps (a) and (b) are non-simultaneously performed.