3D device packaging using through-substrate pillars
View Patent ↗A method for 3D device packaging utilizes through-substrate pillars to mechanically and electrically bond two or more dice. The first die includes a set of access holes extending from a surface of the first die to a set of pads at a metal layer of the first die. The second die includes a set of metal pillars. The first die and the second die are stacked such that each metal pillar extends from a surface of the second die to a corresponding pad via a corresponding access hole. The first die and second die are mechanically and electrically bonded via solder joints formed between the metal pillars and the corresponding pads.
1. A method comprising:
stacking a first semiconductor die with a second semiconductor die, the first semiconductor die comprising a first set of access holes extending from a first surface of the first semiconductor die to a first set of pads at a metal layer of the first semiconductor die and the second semiconductor die comprising a first set of metal pillars, each metal pillar of the first set of metal pillars extending from a surface of the second semiconductor die to a first surface of a corresponding pad of the first set of pads via a corresponding access hole of the first set of access holes; and
bonding the first semiconductor die and the second semiconductor die such that the metal pillars of the first set of metal pillars are in electrical contact with the corresponding pads of the first set of pads.
2. The method of claim 1 , further comprising:
encapsulating the first semiconductor die with an encapsulating material; and
forming a set of pad openings, each pad opening of the set of pad openings extending from a surface of the encapsulating material to a second surface of a corresponding pad of the first set of pads.
3. The method of claim 2 , further comprising:
forming a wire bond with a pad of the first set of pads via a corresponding pad opening of the set of pad openings.
4. The method of claim 1 , further comprising:
performing a solder reflow to form solder joints coupling the metal pillars of the first set of metal pillars with the corresponding pads of the first set of pads.
5. The method of claim 1 , further comprising:
stacking a third semiconductor die with the first semiconductor die, the third semiconductor die comprising a second set of access holes extending from a surface of the third semiconductor die to a second set of pads at a metal layer of the third semiconductor die and the first semiconductor die comprising a second set of metal pillars, each metal pillar of the second set of metal pillars extending from a second surface of the first semiconductor die to a surface of a corresponding pad of the second set of pads via a corresponding access hole of the second set of access holes.
6. A method comprising:
forming a first set of pads at a metal layer of a first semiconductor die;
forming a set of access holes in a first arrangement at the first semiconductor die, each access hole of the set of access holes extending from a surface of the first semiconductor die to a corresponding pad of the set of pads; and
bonding the first semiconductor die to a second semiconductor die, the second semiconductor die comprising a set of metal pillars disposed at a surface of the second semiconductor die in a second arrangement corresponding to the first arrangement, the set of metal pillars extending into the first semiconductor die via the set of access holes such that each metal pillar of the set of metal pillars contacts a first surface of a corresponding pad of the set of pads.
7. The method of claim 6 , wherein bonding the first semiconductor die to the second semiconductor die comprises:
performing a solder reflow to form solder joints coupling the metal pillars with the corresponding pads.
8. The method of claim 6 , wherein the first surface of the first semiconductor die is characterized as a backside of the first semiconductor die.
9. The method of claim 6 , wherein forming the set of access holes comprises:
forming, at each access hole of the set of access holes, a concave surface at the first surface of the corresponding pad.
10. The method of claim 6 , wherein forming the set of access holes comprises forming the set of access holes with walls substantially perpendicular to the surface of the first semiconductor die.
11. The method of claim 6 , further comprising:
encapsulating the first semiconductor die with an encapsulating material; and
forming a set of pad openings, each pad opening of the set of pad openings extending from a surface of the encapsulating material to a second surface of a corresponding pad of the set of pads.
12. The method of claim 11 , further comprising:
forming a wire bond with the second surface of a pad of the set of pads via a corresponding pad opening of the set of pad openings.
13. The method of claim 6 , wherein the metal layer comprises a surface metal layer of the first semiconductor die.
14. A device package comprising:
a first semiconductor die comprising:
a first metal layer comprising a first set of pads; and
a set of access holes in a first arrangement, each access hole of the set of access holes extending from a first surface of the first semiconductor die to a first surface of a corresponding pad of the first set of pads; and
a second semiconductor die bonded to the first semiconductor die, the second semiconductor die comprising:
a first set of metal pillars disposed in a second arrangement corresponding to the first arrangement at a surface of the second semiconductor die that faces the surface of the first semiconductor die, each metal pillar of the first set of metal pillars extending to and in contact with the first surface of a corresponding pad of the set of pads via a corresponding access hole of the set of access holes.
15. The device of claim 14 , wherein each metal pillar of the set of metal pillars is electrically and mechanically coupled to the corresponding pad via a solder joint.
16. The device of claim 14 , wherein at least one access hole of the set of access holes comprises a concave surface at least partially formed at the first surface of the corresponding pad of the set of pads.
17. The device of claim 14 , further comprising:
an encapsulating material encapsulating the first semiconductor die; and
a set of pad openings formed through the encapsulating material to a second surface of a pad of the set of pads.
18. The device of claim 17 , further comprising:
a wire bond disposed in at least one pad opening of the set of pad openings at the second surface of the pad.
19. The device of claim 14 , wherein the first surface of the first semiconductor die is characterized as a backside of the first semiconductor die.
20. The device of claim 14 , wherein:
the first semiconductor die further comprises:
a second set of metal pillars disposed in a third arrangement at a second surface of the first semiconductor die; and
the device package further comprises:
a third semiconductor die bonded to the first semiconductor die, the third semiconductor die comprising:
a second metal layer comprising a second set of pads; and
a second set of access holes in a fourth arrangement corresponding to the third arrangement, each access hole of the second set of access holes extending from a surface of the third semiconductor die that faces the second surface of the first semiconductor die to a surface of a corresponding pad of the second set of pads such that each metal pillar of the second set of metal pillars extends, via a corresponding access hole of the second set of access holes, to and in contact with the surface of the corresponding pad of the second set of pads.