Self-aligned vias formed using sacrificial metal caps
View Patent ↗A method including forming a sacrificial metal cap on a metal line formed in a first dielectric layer; forming a second dielectric layer on the first dielectric layer; removing the sacrificial metal cap selective to the second dielectric layer and metal line to form a cap opening; forming a dielectric cap in the cap opening and on the metal line; forming an interconnect dielectric layer over the dielectric cap and the second dielectric layer; forming an interconnect opening in the interconnect dielectric layer; removing a portion of the dielectric cap exposed by the interconnect opening selective to the interconnect dielectric layer, the second dielectric layer, and the metal line; and forming an interconnect structure in the interconnect opening, the interconnect structure comprising a contact line above a via, the via having an upper via portion with angled sidewalls and a lower via portion with substantially vertical sidewalls.
1. A method for fabricating self-aligned vias formed using sacrificial caps, the method comprising:
forming a sacrificial metal cap on a metal line formed in a first dielectric layer;
forming a second dielectric layer on the first dielectric layer, the second dielectric layer being adjacent to and contacting a sidewall of the sacrificial metal cap;
removing the sacrificial metal cap selective to the second dielectric layer and metal line to form a cap opening, the cap opening having substantially the same width as the metal line;
forming a dielectric cap in the cap opening and on the metal line; and
forming an interconnect dielectric layer over the dielectric cap and the second dielectric layer.
2. The method of claim 1 , wherein the forming the sacrificial metal cap on the metal line formed in the first dielectric layer comprises:
forming a metal cap only on exposed surfaces of the metal line through a selective deposition process.
3. The method of claim 1 , wherein the sacrificial metal cap is comprised of a material having an etch rate different from the etch rates of the second dielectric layer and the metal line.
4. The method of claim 1 , wherein the dielectric cap is comprised of a material having an etch rate different from the etch rates of the interconnect dielectric layer, the second dielectric layer, and the metal line.
5. The method of claim 1 , wherein the second dielectric layer is comprised of a material having an etch rate different from the etch rates of the interconnect dielectric layer and the dielectric cap.
6. A method for fabricating self-aligned vias formed using sacrificial caps, the method comprising:
forming a sacrificial metal cap on a metal line formed in a first dielectric layer;
forming a second dielectric layer on the first dielectric layer, the second dielectric layer being adjacent to and contacting a sidewall of the sacrificial metal cap;
removing the sacrificial metal cap selective to the second dielectric layer and metal line to form a cap opening, the cap opening having substantially the same width as the metal line;
forming a dielectric cap in the cap opening and on the metal line;
forming an interconnect dielectric layer over the dielectric cap and the second dielectric layer.
forming an interconnect opening in the interconnect dielectric layer, the interconnect opening extending from an upper surface of the interconnect dielectric layer to an upper surface of the dielectric cap and an upper surface of the second dielectric layer;
removing a portion of the dielectric cap exposed by the interconnect opening selective to the interconnect dielectric layer, the second dielectric layer, and the metal line; and
forming an interconnect structure in the interconnect opening and on the metal line, the interconnect structure comprising a contact line above a via, the via having an upper via portion with angled sidewalls and a lower via portion with substantially vertical sidewalls.
7. The method of claim 6 , wherein the forming the sacrificial metal cap on the metal line formed in the first dielectric layer comprises:
forming a metal cap only on exposed surfaces of the metal line through a selective deposition process.
8. The method of claim 6 , wherein the lower via portion extends from an upper surface of the metal wire to the upper surface of the second dielectric layer, and the upper via portion extends from the upper surface of the second dielectric layer to a bottom surface of the contact line.
9. The method of claim 6 , wherein the forming an interconnect structure in the interconnect opening comprises:
filling the interconnect opening with a conductive material; and
performing a planarization process so that an upper surface of the conductive material is substantially coplanar with an upper surface of the interconnect dielectric.
10. The method of claim 6 , wherein the lower via portion has a width that is equal to or less than the width of the metal line.
11. The method of claim 6 , wherein the sacrificial metal cap is comprised of a material having an etch rate different from the etch rates of the second dielectric layer and the metal line.
12. The method of claim 6 , wherein the dielectric cap is comprised of a material having an etch rate different from the etch rates of the interconnect dielectric layer, the second dielectric layer, and the metal line.
13. The method of claim 6 , wherein the second dielectric layer is comprised of a material having an etch rate different from the etch rates of the interconnect dielectric layer and the dielectric cap.