Semiconductor device and method of manufacturing the same
Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained. As for a semiconductor device which has a wiring substrate, a semiconductor chip by which the flip chip was made to the wiring substrate, and a heat spreader adhered to the back surface of the semiconductor chip, and which omitted the stiffener for reinforcing a wiring substrate and maintaining the surface smoothness of a heat spreader, a wiring substrate has a plurality of insulating substrates in which a through hole whose diameter differs, respectively was formed, and each insulating substrate contains a glass cloth.
1. A method of manufacturing a semiconductor device comprising:
(a) preparing a wiring substrate having a first surface and a second surface opposite the first surface, wherein a plurality of first electrodes are formed over the first surface, and a plurality of second electrodes are formed over the second surface;
(b) mounting a semiconductor chip having a first main surface over which a plurality of bumps are formed and a second main surface opposite the first main surface over the first surface of the wiring substrate such that the first main surface of the semiconductor chip faces to the first surface of the wiring substrate and the plurality of bumps of the semiconductor chip are electrically connected to the plurality of first electrodes, respectively;
(c) disposing a heat spreader over the second main surface of the semiconductor chip; and
(d) after the step (c), disposing a plurality of solder balls over the plurality of second electrodes of the wiring substrate, respectively and electrically connecting to each other.
2. A method of manufacturing the semiconductor device according to claim 1 , wherein, in the step (d), the plurality of solder balls are disposed over the plurality of second electrodes of the wiring substrate, respectively in a state of supporting an area around an area over which the semiconductor chip is mounted of the second surface of the wiring substrate and not supporting the heat spreader by a supporting jig.
3. A method of manufacturing the semiconductor device according to claim 2 , wherein an plane area of the heat spreader is greater than an plane area of the second main surface of the semiconductor chip.
4. A method of manufacturing the semiconductor device according to claim 1 , wherein, after the step (b) and before the step (c), filling a liquid resin between the first main surface of the semiconductor chip and the first surface of the wiring substrate such that the plurality bumps are sealed by the liquid resin and the liquid resin does not adhere to the second main surface of the semiconductor chip.
5. A method of manufacturing the semiconductor device according to claim 4 , wherein, in the step (c), the heat spreader is disposed over the second main surface of the semiconductor chip via a heat radiation resin.
6. A method of manufacturing the semiconductor device according to claim 5 , wherein in the step (c), the heat radiation resin is applied to the second main surface of the semiconductor chip before disposing the semiconductor chip over the second main surface of the semiconductor chip.
7. A method of manufacturing the semiconductor device according to claim 1 , wherein a plane area of the heat spreader is greater than a plane area of the semiconductor chip.
8. A method of manufacturing the semiconductor device according to claim 4 , wherein, after the step (d), a portion around the semiconductor chip of the first surface of the wiring substrate is not sealed by the liquid resin in a plan view.