Fabricating shallow-trench isolation semiconductor devices to reduce or eliminate oxygen diffusion
A method is disclosed for forming a semiconductor device. A first opening is formed for an STI on a semiconductor substrate and a first process is performed to deposit first oxide into the first opening. A second opening is formed to remove a portion of the first oxide from the first opening and second process(es) is/are performed to deposit second oxide into the second opening and over a remaining portion of the first oxide. A portion of the semiconductor device is formed over a portion of a surface of the second oxide. A semiconductor device includes an STI including a first oxide formed in a lower portion of a trench of the STI and a second oxide formed in an upper portion of the trench and above the first oxide. The semiconductor device includes a portion of the semiconductor device formed over a portion of the second oxide.
1. A method for forming a semiconductor device comprising a shallow trench isolation, comprising:
forming a first opening for the shallow trench isolation on a semiconductor substrate;
performing a first process to deposit first oxide into the first opening;
forming a second opening to remove a portion of the first oxide from the first opening;
performing at least one second process to deposit second oxide into the second opening and over a remaining portion of the first oxide; and
forming at least a portion of the semiconductor device over and contacting at least a portion of a surface of the second oxide;
wherein the method further comprises, prior to performing the at least one second process, forming a liner at least partially conforming to interior surfaces of the second opening and a top surface of the remaining first oxide, wherein the liner at least partially encases sides of the second oxide after the second oxide is deposited by the high-density plasma chemical vapor deposition process.
2. The method of claim 1 , wherein the first process is a high aspect-ratio process and the at least one second process is a high-density plasma chemical vapor deposition process.
3. The method of claim 1 , wherein:
the method further comprises, prior to performing the first process, forming a liner at least partially conforming to interior surfaces of the first opening, wherein the liner at least partially encases sides of the deposited first oxide after the first process is performed to deposit the oxide into the first opening;
forming the second opening further comprises forming the second opening to remove, from the first opening, the portion of the first oxide and a corresponding portion of the liner that previously encased the sides of the portion of the first oxide; and
performing the at least one second process further comprises performing the at least one second process to deposit the second oxide over a remaining portion of the first oxide and a remaining portion of the liner.
4. The method of claim 3 , wherein the first process is a high aspect-ratio process and the at least one second process is a high-density plasma chemical vapor deposition process and wherein the liner comprises a high-k material.
5. The method of claim 3 , wherein the liner comprises at least one of an oxygen sink or an oxygen barrier.
6. The method of claim 5 , wherein the first process is a high aspect-ratio process and the at least one second process is a high-density plasma chemical vapor deposition process.
7. The method of claim 5 , wherein the first process is a high aspect-ratio process and the at least one second process is one or both of a high aspect-ratio process or a high-density plasma chemical vapor deposition process.
8. The method of claim 5 , wherein the liner comprises at least one of HfO 2 , HfSiO 4 , or SiN.
9. The method of claim 1 , wherein the first process is a high aspect-ratio process and the at least one second process is a high-density plasma chemical vapor deposition process and wherein the liner comprises a high-k material.
10. The method of claim 1 , wherein the liner comprises at least one of an oxygen sink or an oxygen barrier.
11. The method of claim 10 , wherein the first process is a high aspect-ratio process and the at least one second process is a high-density plasma chemical vapor deposition process.
12. The method of claim 10 , wherein the liner comprises at least one of HfO 2 , HfSiO 4 , or SiN.
13. The method of claim 10 , wherein the first process is a high aspect-ratio process and the at least one second process is one or both of a high aspect-ratio process or high-density plasma chemical vapor deposition process.
14. The method of claim 1 , wherein the portion of the semiconductor device comprises a high dielectric constant metal gate.
15. The method of claim 1 , wherein the semiconductor substrate comprises one of a silicon-on-insulator substrate or a bulk silicon substrate.