Electrically isolated SiGe fin formation by local oxidation
View Patent ↗A silicon germanium alloy layer is formed on a semiconductor material layer by epitaxy. An oxygen impermeable layer is formed on the silicon germanium alloy layer. The oxygen impermeable layer and the silicon germanium alloy layer are patterned to form stacks of a silicon germanium alloy fin and an oxygen impermeable cap. A shallow trench isolation structure is formed by deposition, planarization, and recessing or an oxygen permeable dielectric material. An oxygen impermeable spacer is formed around each stack of a silicon germanium alloy fin and an oxygen impermeable cap. A thermal oxidation process is performed to convert a lower portion of each silicon germanium alloy fin into a silicon germanium oxide. During the thermal oxidation process, germanium atoms diffuse into unoxidized portions of the silicon germanium alloy fins to increase the germanium concentration therein.
1. A semiconductor structure comprising:
a semiconductor oxide material portion that contains a semiconductor oxide layer located on a semiconductor material layer and further contains a plurality of semiconductor oxide pedestals that protrudes above said semiconductor oxide layer;
a plurality of silicon germanium alloy fins located on said plurality of semiconductor oxide pedestals, wherein each of said plurality of silicon germanium alloy fins is located directly on, and above, one of said plurality of semiconductor oxide pedestals, and wherein said plurality of semiconductor oxide pedestals has a greater concentration of germanium atoms than said semiconductor oxide layer; and
a shallow trench isolation structure contacting a top surface of said semiconductor oxide layer and sidewalls of said plurality of semiconductor oxide pedestals, wherein bottommost portions of said plurality of silicon germanium alloy fins are more distal from said semiconductor oxide layer than a planar top surface of said shallow trench isolation structure is from said semiconductor oxide layer.
2. The semiconductor structure of claim 1 , wherein each of said plurality of silicon germanium alloy fins comprises a pair of concave bottom surfaces that contact surfaces of said semiconductor oxide pedestal.
3. The semiconductor structure of claim 2 , wherein said pair of concave surfaces is adjoined at an edge that is parallel to a pair of vertical sidewalls of one of said plurality of silicon germanium alloy fins.
4. The semiconductor structure of claim 1 , wherein a portion of an interface between said semiconductor oxide layer and said semiconductor material layer protrudes downward in regions that do not underlie any of said plurality of silicon germanium alloy fins with respect to another portion of said interface in regions that underlie said plurality of silicon germanium alloy fins.
5. The semiconductor structure of claim 1 , wherein a ratio of germanium atoms to silicon atoms in said plurality of silicon germanium alloy fins is greater than a ratio of germanium atoms to silicon atoms in said plurality of semiconductor oxide pedestals.
6. The semiconductor structure of claim 5 , wherein said ratio of germanium atoms to silicon atoms in said plurality of semiconductor oxide pedestals is greater than a ratio of germanium atoms to silicon atoms in said semiconductor oxide layer.
7. The semiconductor structure of claim 1 , wherein said semiconductor material layer is a single crystalline silicon layer.
8. The semiconductor structure of claim 7 , wherein said plurality of silicon germanium alloy fins and said semiconductor material layer have an identical crystallographic structure, and have an identical spatial orientation for each crystallographic axis of said identical crystallographic structure.
9. The semiconductor structure of claim 1 , further comprising a gate structure straddling said plurality of silicon germanium alloy fins and including a gate dielectric layer and a gate conductor.
10. A semiconductor structure comprising:
a semiconductor oxide material portion that contains a semiconductor oxide layer located on a semiconductor material layer and further contains a plurality of semiconductor oxide pedestals that protrudes above said semiconductor oxide layer;
a plurality of silicon germanium alloy fins located on said plurality of semiconductor oxide pedestals, wherein each of said plurality of silicon germanium alloy fins is located directly on, and above, one of said plurality of semiconductor oxide pedestals, and wherein a ratio of germanium atoms to silicon atoms in said plurality of silicon germanium alloy fins is greater than a ratio of germanium atoms to silicon atoms in said plurality of semiconductor oxide pedestals; and
a shallow trench isolation structure contacting a top surface of said semiconductor oxide layer and sidewalls of said plurality of semiconductor oxide pedestals, wherein bottommost portions of said plurality of silicon germanium alloy fins are more distal from said semiconductor oxide layer than a planar top surface of said shallow trench isolation structure is from said semiconductor oxide layer.
11. The semiconductor structure of claim 10 , wherein each of said plurality of silicon germanium alloy fins comprises a pair of concave bottom surfaces that contact surfaces of said semiconductor oxide pedestal.
12. The semiconductor structure of claim 11 , wherein said pair of concave surfaces is adjoined at an edge that is parallel to a pair of vertical sidewalls of one of said plurality of silicon germanium alloy fins.
13. The semiconductor structure of claim 10 , wherein a portion of an interface between said semiconductor oxide layer and said semiconductor material layer protrudes downward in regions that do not underlie any of said plurality of silicon germanium alloy fins with respect to another portion of said interface in regions that underlie said plurality of silicon germanium alloy fins.
14. The semiconductor structure of claim 10 , wherein said ratio of germanium atoms to silicon atoms in said plurality of semiconductor oxide pedestals is greater than a ratio of germanium atoms to silicon atoms in said semiconductor oxide layer.
15. The semiconductor structure of claim 10 , wherein said semiconductor material layer is a single crystalline silicon layer.
16. The semiconductor structure of claim 15 , wherein said plurality of silicon germanium alloy fins and said semiconductor material layer have an identical crystallographic structure, and have an identical spatial orientation for each crystallographic axis of said identical crystallographic structure.
17. The semiconductor structure of claim 10 , further comprising a gate structure straddling said plurality of silicon germanium alloy fins and including a gate dielectric layer and a gate conductor.
18. A semiconductor structure comprising:
a semiconductor oxide material portion that contains a semiconductor oxide layer located on a semiconductor material layer and further contains a plurality of semiconductor oxide pedestals that protrudes above said semiconductor oxide layer;
a plurality of silicon germanium alloy fins located on said plurality of semiconductor oxide pedestals, wherein each of said plurality of silicon germanium alloy fins is located directly on, and above, one of said plurality of semiconductor oxide pedestals, and wherein each of said plurality of silicon germanium alloy fins comprises a pair of concave bottom surfaces that contact surfaces of said semiconductor oxide pedestal; and
a shallow trench isolation structure contacting a top surface of said semiconductor oxide layer and sidewalls of said plurality of semiconductor oxide pedestals, wherein bottommost portions of said plurality of silicon germanium alloy fins are more distal from said semiconductor oxide layer than a planar top surface of said shallow trench isolation structure is from said semiconductor oxide layer.