IP Library Granted Patent US 9,490,770
Granted Patent B2
US 9,490,770 · App. 14/092,026 · Granted Nov 8, 2016

Acoustic resonator comprising temperature compensating layer and perimeter distributed bragg reflector

Inventors: Dariusz Burak (Fort Collins, CO); John Choy (Westminster, CO); Kevin J. Grannen (Thornton, CO); Phil Nikkel (Loveland, CO)
Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
H03H9/02102H03H9/173H03H9/175H03H9/585
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Quick Facts
Patent No.
US 9,490,770
App. No.
14/092,026
Granted
Nov 8, 2016
Kind
B2
Abstract

An acoustic resonator structure includes a bottom electrode disposed on a substrate, a piezoelectric layer disposed on the bottom electrode, a top electrode disposed on the piezoelectric layer, a cavity disposed beneath the bottom electrode, and a temperature compensating feature. The temperature compensating feature has a positive temperature coefficient for offsetting at least a portion of a negative temperature coefficient of the piezoelectric and electrode layers. The acoustic resonator structure further includes an acoustic reflector disposed over the substrate around a perimeter of the cavity. The acoustic reflector includes a layer of low acoustic impedance material stacked on a layer of high acoustic impedance material.

Claims (36)

1. An acoustic resonator, comprising:

a perimeter acoustic reflector disposed on a substrate around a perimeter of a cavity, the perimeter acoustic reflector comprising a layer of low acoustic impedance material stacked on a layer of high acoustic impedance material;

a bottom electrode disposed over the cavity and on at least a portion of the perimeter acoustic reflector;

a piezoelectric layer disposed on the bottom electrode;

a top electrode disposed on the piezoelectric layer; and

a temperature compensating feature having a positive temperature coefficient for offsetting at least a portion of a negative temperature coefficient of the piezoelectric layer, the bottom electrode and the top electrode,

wherein the cavity extends from the bottom electrode at least partially through the perimeter acoustic reflector, and ends within the perimeter acoustic reflector, at a top surface of the substrate or within the substrate, enabling vibration of at least a portion of the piezoelectric layer positioned over the cavity.

2. The acoustic resonator of claim 1 , wherein the temperature compensating feature comprises a temperature compensating layer formed in at least one of the bottom electrode and the top electrode.

3. The acoustic resonator of claim 2 , further comprising:

at least one frame disposed within a main membrane region defined by an overlap between the bottom electrode, the piezoelectric layer, and the top electrode, and having an outer edge substantially aligned with a boundary of the main membrane region; and

a collar formed separate from the frame, disposed outside the main membrane region, and having an inner edge substantially aligned with the boundary of or overlapping the main membrane region.

4. The acoustic resonator of claim 3 , wherein the at least one frame comprises a frame disposed at a bottom portion of the top electrode, and the temperature compensating layer is formed in the bottom electrode.

5. The acoustic resonator of claim 4 , wherein the at least one frame comprises another frame disposed at one of a top portion or a bottom portion of the bottom electrode.

6. The acoustic resonator of claim 3 , wherein the at least one frame comprises a frame disposed at a bottom portion of the bottom electrode, and the temperature compensating layer is formed in the top electrode.

7. The acoustic resonator of claim 4 , wherein the collar is formed between the perimeter acoustic reflector and the bottom electrode.

8. The acoustic resonator of claim 6 , wherein the collar is formed between the perimeter acoustic reflector and the bottom electrode.

9. The acoustic resonator of claim 5 , wherein the collar is formed between the perimeter acoustic reflector and the bottom electrode.

10. The acoustic resonator of claim 1 , wherein the temperature compensating feature comprises a temperature compensating layer formed in the piezoelectric layer.

11. The acoustic resonator of claim 10 , further comprising:

at least one frame disposed within a main membrane region defined by an overlap between the bottom electrode, the piezoelectric layer, and the top electrode, and having an outer edge substantially aligned with a boundary of the main membrane region; and

a collar formed separate from the frame, disposed outside the main membrane region, and having an inner edge substantially aligned with the boundary of or overlapping the main membrane region.

12. The acoustic resonator of claim 11 , wherein the at least one frame comprises a first frame disposed in the bottom electrode and a second frame disposed in the top electrode.

13. The acoustic resonator of claim 11 , wherein the collar is formed on a top surface of the top electrode and a planarization layer adjacent to the top electrode.

14. The acoustic resonator of claim 11 , wherein the collar is formed between the bottom electrode and the piezoelectric layer.

15. The acoustic resonator of claim 11 , wherein the collar is formed between the perimeter acoustic reflector and the bottom electrode.

16. The acoustic resonator of claim 3 , wherein the at least one frame is an add-on frame or a composite frame.

17. The acoustic resonator of claim 16 , wherein the collar comprises borosilicate glass, carbon-doped silicon oxide, silicon carbide, silicon nitride, aluminum oxide, aluminum nitride, zinc oxide, lead zirconium titanate, diamond or diamond-like carbon, and

wherein the frame comprises a layer of copper, molybdenum, aluminum, tungsten, iridium, borosilicate glass, carbon-doped silicon oxide, silicon carbide, silicon nitride, aluminum oxide, aluminum nitride, zinc oxide, lead zirconium titanate, diamond or diamond-like carbon.

18. The acoustic resonator of claim 1 , wherein the piezoelectric layer is doped with at least one rare earth element for offsetting at least a portion of degradation of an electromechanical coupling coefficient of the acoustic resonator caused by the temperature compensating feature.

19. The acoustic resonator of claim 3 , wherein the collar defines a collar region having a cutoff frequency that is substantially the same as a cutoff frequency of the main membrane region.

20. An acoustic resonator, comprising:

an acoustic stack arranged over a cavity, the acoustic stack comprising a piezoelectric layer sandwiched between bottom and top electrode layers and having a main membrane region defined by an overlap between the bottom electrode, the piezoelectric layer, and the top electrode;

a temperature compensating layer having a positive temperature coefficient for offsetting at least a portion of a negative temperature coefficient of the piezoelectric, the bottom electrode layer and the top electrode layer, the temperature compensating layer being located in one of the bottom electrode layer, the top electrode layer, and the piezoelectric layer;

a perimeter distributed Bragg reflector (DBR) disposed on a substrate around a perimeter of the cavity, the perimeter DBR consisting of a layer of low acoustic impedance material stacked on a layer of high acoustic impedance material; and

a collar disposed outside the main membrane region and having an inner edge substantially aligned with the boundary of or overlapping the main membrane region;

wherein the cavity extends from the acoustic stack through at least a portion of the perimeter DBR, ending within the perimeter DBR, at a top surface of the substrate or within the substrate.

Assignments (7)
CORRECTIVE ASSIGNMENT TO CORRECT THE EXECUTION DATE PREVIOUSLY RECORDED AT REEL: 047422 FRAME: 0464. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER. Recorded Mar 6, 2019
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
Reel/Frame 048883/0702 →
MERGER Recorded Oct 5, 2018
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
Reel/Frame 047422/0464 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENTS Recorded Feb 3, 2017
From: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 041710/0001 →
PATENT SECURITY AGREEMENT Recorded Feb 11, 2016
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
Reel/Frame 037808/0001 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS (RELEASES RF 032851-0001) Recorded Feb 2, 2016
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 037689/0001 →
PATENT SECURITY AGREEMENT Recorded May 8, 2014
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 032851/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 27, 2013
From: BURAK, DARIUSZ; CHOY, JOHN; GRANNEN, KEVIN J.; NIKKEL, PHIL
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 031689/0298 →
Continuity (6)
Continuation In Part 13955774 · Jul 31, 2013
Continuation In Part 13781491 · Feb 28, 2013
Continuation In Part 13663449 · Oct 29, 2012
Continuation In Part 13208883 · Aug 12, 2011
Continuation In Part 13074262 · Mar 29, 2011
Related Publication 20140152152A1 · Jun 5, 2014