Method of forming PN floating gate non-volatile storage elements and transistor having N+ gate
View Patent ↗Non-volatile storage elements having a PN floating gate are disclosed herein. The floating gate may have a P− region near the tunnel oxide, and may have an N+ region near the control gate. In some embodiments, a P− region near the tunnel oxide helps provide good data retention. In some embodiments, an N+ region near the control gate helps to achieve a good coupling ratio between the control gate and floating gate. Therefore, programming of non-volatile storage elements is efficient. Also erasing the non-volatile storage elements may be efficient. In some embodiments, having a P− region near the tunnel oxide (as opposed to a strongly doped p-type semiconductor) may improve erase efficiency relative to P+.
1. A method for forming a memory array comprising:
forming insulator over a substrate, the insulator formed in one or more first regions for non-volatile storage elements and in one or more second regions for transistors;
forming a P− semiconductor region over the insulator in the one or more first regions and in the one or more second regions;
forming a first N+ semiconductor region over the P− semiconductor region in the one or more first regions and in the one or more second regions;
transforming the P− semiconductor region in the one or more second regions into a second N+ semiconductor region;
forming floating gates for non-volatile storage elements in the one or more first regions from the P− semiconductor region and the first N+ semiconductor region that remains in the one or more first regions; and
forming transistor gates in the one or more second regions, the transistor gates including portions of the second N+ semiconductor region and portions of the first N+ semiconductor region in the one or more second regions.
2. The method of claim 1 , further comprising:
forming an inter-gate dielectric over the first N+ semiconductor region at least in the one or more first regions;
forming a third N+ semiconductor region over the inter-gate dielectric in the one or more first regions and in the one or more second regions; and
forming control gates for the non-volatile storage elements from portions of the third N+ semiconductor region.
3. The method of claim 2 , wherein the forming transistor gates is performed after forming the third N+ semiconductor region, the transistor gates further including portions of the third N+ semiconductor region.
4. The method of claim 1 , wherein the transforming the P− semiconductor region in the one or more second regions includes:
counter-doping the P− semiconductor region in the one or more second regions with an N-type impurity to form the second N+ semiconductor region, the second N+ semiconductor region borders the insulator in the one or more second regions.
5. The method of claim 4 , further comprising:
forming a barrier region over the P− semiconductor region in the one or more first regions, the barrier region impedes diffusion of impurities between the first N+ semiconductor region and the P− semiconductor region.
6. The method of claim 5 , further comprising:
forming the barrier region over the P− semiconductor region in the one or more second regions, the counter-doping includes implanting the N-type impurity through the barrier region in the one or more second regions.
7. The method of claim 1 , further comprising:
forming an intrinsic semiconductor region over the P− semiconductor region in the one or more first regions, the first N+ semiconductor region is formed over the intrinsic semiconductor region.
8. The method of claim 1 , wherein the transforming the P− semiconductor region in the one or more second regions includes:
performing a thermal anneal to cause diffusion of N-type impurities from the first N+ semiconductor region into the P− semiconductor region in the one or more second regions.
9. The method of claim 8 , further comprising:
forming a barrier region over the P− semiconductor region in the one or more first regions, the barrier region prevents diffusion of impurities between the first N-type semiconductor region and the P− semiconductor region in the one or more first regions.
10. The method of claim 1 , wherein the transistor gates include gates of select transistors in the memory array.
11. The method of claim 1 , wherein the transistor gates include gates of transistors in a peripheral region of the memory array.
12. A method for forming a NAND string in a memory array, the method comprising:
forming insulator over a substrate, the insulator formed in a first region for non-volatile storage elements and in a second region for a select gate transistor;
forming a P− semiconductor region over the insulator in the first region and in the second region;
forming a first N+ semiconductor region over the P− semiconductor region in the first region and in the second region;
transforming the P− semiconductor region in the second region into a second N+ semiconductor region;
forming floating gates for the non-volatile storage elements in the first region from portions of the P− semiconductor region in the first region and portions of the first N+ semiconductor region in the first region; and
forming the select gate transistor in the second region from a portion of the second N+ semiconductor region and a portion of the first N+ semiconductor region in the second region.
13. The method of claim 12 , further comprising:
forming an inter-gate dielectric over the first N+ semiconductor region the first region;
forming a third N+ semiconductor region over the inter-gate dielectric in the first region and in the second region; and
forming control gates for the non-volatile storage elements from portions of the third N+ semiconductor region.
14. The method of claim 13 , wherein the select gate transistor is formed after forming the third N+ semiconductor region, the select gate transistor further including a portion of the third N+ semiconductor region.
15. The method of claim 12 , wherein the transforming the P− semiconductor region in the second region includes:
counter-doping the P− semiconductor region in the second region with an N-type impurity to form the second N+ semiconductor region, the second N+ semiconductor region borders the insulator in the second region.
16. The method of claim 15 , further comprising:
forming a barrier region over the P− semiconductor region in the first region, the barrier region impedes diffusion of impurities between the first N+ semiconductor region and the P− semiconductor region.
17. The method of claim 16 , further comprising:
forming the barrier region over the P− semiconductor region in the second region, the counter-doping includes implanting the N-type impurity through the barrier region in the second region.
18. The method of claim 12 , further comprising:
forming an intrinsic semiconductor region over the P− semiconductor region in the first region, the first N+ semiconductor region is formed over the intrinsic semiconductor region.
19. The method of claim 12 , wherein the transforming the P− semiconductor region in the second region includes:
performing a thermal anneal to cause diffusion of N-type impurities from the first N+ semiconductor region in the second region into the P− semiconductor region in the second region.
20. The method of claim 19 , further comprising:
forming a barrier region over the P− semiconductor region in the first region, the barrier region prevents diffusion of impurities between the first N-type semiconductor region in the first region and the P− semiconductor region in the first region.