IP Library Granted Patent US 10,094,024
Granted Patent B2
US 10,094,024 · App. 14/127,315 · Granted Oct 9, 2018

Method of manufacturing multilayer body, method of processing substrate, and multilayer body

Inventors: Yasushi Fujii (Kawasaki, JP); Tatsuhiro Mitake (Kawasaki, JP); Atsushi Matsushita (Kawasaki, JP)
Assignee: TOKYO OHKA KOGYO CO., LTD.
C23C16/50C23C16/26C23C16/505H01L21/0212H01L21/02274H01L21/6835H01L2221/6834H01L2221/68318H01L2221/68327H01L2221/68331H01L2221/68381Y10T428/31504
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Quick Facts
Patent No.
US 10,094,024
App. No.
14/127,315
Granted
Oct 9, 2018
Kind
B2
Abstract

A method for forming a release layer which lies between a substrate and a supporting member and has a property that changes when the release layer absorbs light coming through the supporting member, by carrying out plasma CVD with a high-frequency power that is set so as to be higher than a power at which a mode jump occurs.

Claims (18)

1. A method for producing a laminate, the laminate including (i) a substrate, (ii) a light-transmitting supporting member which supports the substrate and (iii) a release layer which lies between the substrate and the supporting member and has a property that changes when the release layer absorbs light coming through the supporting member, wherein the release layer absorbs 80% or more of light having a wavelength of 600 nm or less, wherein

said method comprises forming the release layer by plasma CVD using a reactive gas containing a fluorocarbon gas as a main component; and wherein

forming the release layer comprises carrying out the plasma CVD with a high-frequency power that is higher than a power at which a mode jump from E-mode plasma to H-mode plasma occurs.

2. The method according to claim 1 , wherein, in forming the release layer, the plasma CVD is carried out at a layer formation temperature of 300° C. or lower.

3. The method according to claim 1 , wherein, in forming the release layer, the plasma CVD is carried out in a reaction chamber made of ceramics.

4. A method for processing a substrate, comprising:

producing the laminate by the method recited in claim 1 and thereafter;

irradiating the supporting member-side of the release layer with light to thereby change the property of the release layer and thereafter;

separating the supporting member from the substrate.

5. The method according to claim 1 , wherein the reactive gas contains a hydrocarbon gas as an additive gas.

6. A method for processing a substrate, comprising:

producing the laminate by a method recited in claim 2 and thereafter;

irradiating the supporting member-side of the release layer with light to thereby change the property of the release layer and thereafter;

separating the supporting member from the substrate.

7. A method for processing a substrate, comprising:

producing the laminate by a method recited in claim 3 and thereafter;

irradiating the supporting member-side of the release layer with light to thereby change the property of the release layer and thereafter;

separating the supporting member from the substrate.

Assignments (3)
CHANGE OF NAME Recorded Apr 11, 2023
From: PROCESS EQUIPMENT BUSINESS SPIN-OFF PREPARATION CO., LTD.
To: AIMECHATEC, LTD.
Reel/Frame 063286/0683 →
CHANGE OF NAME Recorded Mar 28, 2023
From: TOKYO OHKA KOGYO CO., LTD.
To: PROCESS EQUIPMENT BUSINESS SPIN-OFF PREPARATION CO., LTD.
Reel/Frame 063186/0289 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 8, 2014
From: FUJII, YASUSHI; MITAKE, TATSUHIRO; MATSUSHITA, ATSUSHI
To: TOKYO OHKA KOGYO CO., LTD.
Reel/Frame 031916/0906 →
Priority Claims (1)
JP 2011-141267 · Jun 24, 2011 · national
Continuity (1)
Related Publication 20140141253A1 · May 22, 2014