Semiconductor device and method of forming fine pitch RDL over semiconductor die in fan-out package

1. A method of making a semiconductor device, comprising:

providing a substrate;

forming a conductive layer over the substrate;

disposing a semiconductor die over the conductive layer;

disposing a first encapsulant over the semiconductor die, substrate, and conductive layer;

removing a portion of the substrate to expose the conductive layer after depositing the first encapsulant;

disposing a second encapsulant around the first encapsulant and conductive layer after removing the portion of the substrate; and

forming an interconnect structure over the conductive layer and second encapsulant.

2. The method of claim 1 , further including disposing a first passive device over the conductive layer.

3. The method of claim 2 , further including disposing a second passive device adjacent to the conductive layer.

4. The method of claim 1 , further including:

providing the substrate to include an insulating layer;

forming the conductive layer over the insulating layer; and

forming a plurality of openings in the insulating layer over the conductive layer.

5. The method of claim 4 , further including removing the portion of the substrate prior to forming the openings in the insulating layer.

6. The method of claim 1 , further including disposing an interconnect unit including a conductive via in a peripheral region of the semiconductor die.

7. A method of making a semiconductor device, comprising:

providing a substrate;

forming a first conductive layer over the substrate;

disposing a first semiconductor die over the first conductive layer;

disposing a second semiconductor die over the first conductive layer adjacent to the first semiconductor die;

disposing a first encapsulant over the first semiconductor die, second semiconductor die, and first conductive layer;

singulating through the first encapsulant with the first semiconductor die remaining attached to the second semiconductor die by the first encapsulant;

removing a portion of the substrate over the first conductive layer;

depositing a second encapsulant over the first semiconductor die, second semiconductor die, first conductive layer, and first encapsulant after singulating through the first encapsulant; and

forming an interconnect structure over the first conductive layer opposite the first semiconductor die.

8. The method of claim 7 , wherein forming the interconnect structure includes forming a second conductive layer over the first encapsulant and first conductive layer by performing a metal deposition technique onto the first conductive layer.

9. The method of claim 7 , further including disposing a passive device in a peripheral region of the first semiconductor die.

10. The method of claim 9 , further including depositing the second encapsulant over the passive device and first semiconductor die.

11. The method of claim 7 , further including:

disposing vertical interconnect structure in a peripheral region of the first semiconductor die;

depositing the first encapsulant around the first semiconductor die and vertical interconnect structure; and

forming an opening in the first encapsulant over the vertical interconnect structure.

12. The method of claim 7 , further including forming a composite interconnect structure over the first semiconductor die.

13. A method of making a semiconductor device, comprising:

providing a substrate;

forming a first interconnect structure over the substrate;

disposing a first semiconductor die over the first interconnect structure;

disposing a second encapsulant over the first semiconductor die and first interconnect structure;

singulating through the second encapsulant;

disposing a first encapsulant over the first semiconductor die and first interconnect structure after singulating through the second encapsulant;

removing a portion of the substrate over the first interconnect structure; and

forming a second interconnect structure over the first encapsulant and first interconnect structure.

14. The method of claim 13 , further including disposing a passive device over the first interconnect structure.

15. The method of claim 13 , further including disposing a passive device adjacent to the first interconnect structure.

16. The method of claim 13 , further including disposing a vertical interconnect structure in a peripheral region of the first semiconductor die.

17. The method of claim 16 , further including forming an opening in the first encapsulant over the vertical interconnect structure.

18. The method of claim 13 , further including disposing a second semiconductor die over the first interconnect structure.

19. A method of making a semiconductor device, comprising:

providing a substrate including an insulating layer and a conductive layer;

forming a first interconnect structure over the substrate and connected to the conductive layer;

disposing a semiconductor die over the first interconnect structure;

disposing a first encapsulant over the substrate, first interconnect structure, and semiconductor die; and

removing a portion of the insulating layer after forming the first interconnect structure to expose the conductive layer.

20. The method of claim 19 , further including disposing a second encapsulant around the substrate, semiconductor die, first interconnect structure, and first encapsulant.

21. The method of claim 19 , further including disposing a vertical interconnect structure in a peripheral region of the semiconductor die.

22. The method of claim 20 , further including forming a second interconnect structure over the second encapsulant outside a footprint of the first encapsulant.

23. The method of claim 20 , further including singulating through the first encapsulant prior to depositing the second encapsulant.