IP Library Granted Patent US 9,595,560
Granted Patent B2
US 9,595,560 · App. 14/171,181 · Granted Mar 14, 2017

Pumped pinned photodiode pixel array

Inventors: Chung Chun Wan (Fremont, CA); Xiangli Li (San Jose, CA)
Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
H01L27/14887H01L27/1461H01L27/14612H01L27/14654H04N5/3532H04N5/37452
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Quick Facts
Patent No.
US 9,595,560
App. No.
14/171,181
Granted
Mar 14, 2017
Kind
B2
Abstract

The present invention relates to a pumped pixel that includes a first photo-diode accumulating charge in response to impinging photons, a second photo-diode, and a floating diffusion positioned on a substrate. The pixel also includes a charge barrier positioned on the substrate between the first photo-diode and the second photo-diode, where the charge harrier temporarily blocks charge transfer between the first photo-diode and the second photo-diode. A pump gate may also be formed on the substrate adjacent to the charge barrier. The pump gate pumps the accumulated charge from the first photo-diode to the second photo-diode through the charge barrier. Also included is a transfer gate positioned on the substrate between the second photo-diode and the floating diffusion. The transfer gate serves to transfer the pumped charge from, the second photo-diode to the floating diffusion.

Claims (43)

1. A pumped pixel, comprising:

a photodiode that accumulates charge in response to impinging photons;

a floating diffusion;

a charge barrier interposed between the photodiode and the floating diffusion, wherein the charge barrier temporarily blocks charge transfer between the photodiode and the floating diffusion;

an additional charge barrier interposed between the charge barrier and the photodiode;

an additional photodiode interposed between the charge barrier and the additional charge barrier, wherein the additional charge barrier temporarily blocks charge transfer between the photodiode and the additional photodiode; and

a first pump gate formed adjacent to the charge barrier, wherein the first pump gate pumps charge from the additional photodiode to the floating diffusion over the charge barrier.

2. The pumped pixel defined in claim 1 , further comprising:

a second pump gate formed adjacent to the additional charge barrier, wherein the second pump gate pumps charge from the photodiode to the additional photodiode over the additional charge barrier.

3. The pumped pixel defined in claim 2 , wherein the pumped pixel comprises one pumped pixel in an array of pumped pixels on an image device, and wherein during a rolling shutter mode of the image device, for each of the pumped pixels in a selected row of the array, a controller:

applies a reset voltage to the photodiode and the floating diffusion; and

applies a positive and a negative voltage to the first pump gate to transfer the charge from the additional photodiode towards the floating diffusion.

4. The pumped pixel defined in claim 2 , wherein the pumped pixel comprises one pumped pixel in an array of pumped pixels on an image device, and wherein during a global shutter mode of the image device, a controller:

simultaneously applies a reset voltage to the photodiode and the floating diffusion for every pumped pixel in the array; and

applies a positive and a negative voltage to the first pump gate to transfer the charge from the additional photodiode towards the floating diffusion for every pumped pixel in a selected row in the array.

5. A pumped pixel, comprising:

a photodiode;

a floating diffusion formed in a substrate;

a charge barrier formed in the substrate between the photodiode and the floating diffusion; and

a pump gate formed in the substrate adjacent to the charge barrier, wherein the pump gate pumps charge from the photodiode towards the floating diffusion over the charge barrier, wherein the photodiode has a well for storing charge, and wherein the substrate below the pump gate has a clock well for storing charge and a clock barrier to block the charge in the clock well from transferring back towards the photodiode.

6. The pumped pixel defined in claim 5 , further comprising:

an additional photodiode, wherein the charge barrier is formed between the additional photodiode and the floating diffusion.

7. The pumped pixel defined in claim 6 , further comprising:

an additional charge barrier formed between the photodiode and the additional photodiode, wherein the additional charge barrier temporarily blocks charge transfer between the photodiode and the additional photodiode.

8. The pumped pixel defined in claim 7 , further comprising:

an additional pump gate formed adjacent to the additional charge barrier, wherein the additional pump gate pumps accumulated charge from the photodiode to the additional photodiode over the additional charge barrier.

9. The pumped pixel defined in claim 8 , wherein a CMOS imager includes an array of pumped pixels, and wherein during a rolling shutter mode of the imager, for each of the pumped pixels in a selected row of the array, a controller:

applies a reset voltage to the floating diffusion, the photodiode, and the additional photodiode to clear stored charge;

repeatedly applies a positive and then a negative voltage to the additional pump gate to transfer accumulated charge from the photodiode over the additional charge barrier into the additional photodiode; and

repeatedly applies a positive and then a negative voltage to the pump gate to transfer stored charge from the additional photodiode over the charge barrier into the floating diffusion.

10. The pumped pixel defined in claim 8 , wherein a CMOS image includes an array of pumped pixels, and wherein during a global shutter mode of the imager, a controller:

applies a reset voltage to the floating diffusion, the photodiode, and the additional photodiode in every pumped pixel in the array to simultaneously clear stored charge;

applies a negative and positive voltage to the additional pump gate of every pumped pixel in the array to simultaneously transfer accumulated charge from the photodiode over the additional charge barrier into the additional photodiode; and

applies a positive and negative voltage to the pump gate of every pumped pixel in a selected row in the array to transfer stored charge from the additional photodiode over the charge barrier into the floating diffusion.

11. The pumped pixel defined in claim 8 , wherein the photodiode and the additional photodiode have wells for storing charge, wherein the substrate below the additional pump gate has an additional clock well for storing charge and an additional clock barrier to block the charge in the additional clock well from transferring back into the photodiode, and wherein the clock barrier blocks the charge in the clock well from transferring back into the additional photodiode.

12. A method of operating a pumped pixel that includes a photodiode, a floating diffusion, a pump gate, a charge barrier associated with the pump gate, an additional photodiode, an additional pump gate, and an additional charge barrier associated with the additional pump gate, the method comprising:

with the photodiode, accumulating charge in response to impinging photons;

with the pump gate, pumping charge from the photodiode towards the floating diffusion over the charge barrier by applying a positive and negative voltage to the pump gate to transfer the charge from the photodiode towards the floating diffusion while the negative voltage is applied;

with the additional pump gate, pumping charge from the photodiode over the additional charge barrier into the additional photodiode, wherein pumping charge from the photodiode towards the floating diffusion with the pump gate comprises pumping charge from the additional photodiode over the charge barrier into the floating diffusion with the pump gate; and

reading charge out from the floating diffusion.

13. The method defined in claim 12 , wherein the pumped pixel comprises one pumped pixel in an array of pumped pixels on an imager, and wherein the imager is operated in a global shutter mode, the method further comprising:

simultaneously applying a reset voltage to the photodiode and the floating diffusion for every pumped pixel in the array; and

applying the positive and negative voltage to the pump gate to transfer the charge from the photodiode towards the floating diffusion for every pumped pixel in a selected row in the array.

Assignments (6)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 13, 2024
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC D/B/A ONSEMI
To: LIBRE HOLDINGS, INC.
Reel/Frame 067396/0296 →
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 038620, FRAME 0087 Recorded Jun 22, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064070/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE INCORRECT PATENT NUMBER 5859768 AND TO RECITE COLLATERAL AGENT ROLE OF RECEIVING PARTY IN THE SECURITY INTEREST PREVIOUSLY RECORDED ON REEL 038620 FRAME 0087. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Aug 25, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 039853/0001 →
SECURITY INTEREST Recorded Apr 15, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 038620/0087 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 18, 2014
From: APTINA IMAGING CORPORATION
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 034673/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 12, 2014
From: WAN, CHUNG CHUN; LI, XIANGLI
To: APTINA IMAGING CORPORATION
Reel/Frame 034488/0651 →
Continuity (2)
Division 13242865 · Sep 23, 2011
Related Publication 20140146209A1 · May 29, 2014