Method and apparatus for plasma dicing a semi-conductor wafer
View Patent ↗The present invention provides a method for plasma dicing a substrate. The method comprising: providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate on a carrier support to form a work piece; providing an intermediate ring interposed between the substrate and the frame; loading the work piece onto the work piece support; generating a plasma through the plasma source; and etching the work piece through the generated plasma.
1. A method for plasma dicing a substrate, the method comprising:
providing a process chamber having a wall;
providing a plasma source adjacent to the wall of the process chamber;
providing a work piece support within the process chamber;
placing the substrate onto a support film on a frame to form a work piece;
providing an intermediate ring interposed between the substrate and the frame;
providing a cover ring between the plasma source and the work piece;
loading the work piece onto the work piece support;
generating a plasma through the plasma source; and
etching the work piece through the generated plasma.
2. The method according to claim 1 wherein the intermediate ring does not overlap the cover ring.
3. The method according to claim 1 wherein the intermediate ring does overlap the cover ring.
4. The method according to claim 1 further comprising:
the intermediate ring having an inner diameter; and
the substrate having an outer diameter;
wherein the inner diameter of the intermediate ring being greater in size than the outer diameter of the substrate.
5. The method according to claim 1 wherein the intermediate ring being positioned coplanar with the substrate.
6. The method according to claim 1 wherein the intermediate ring further comprising one or more pieces.
7. The method according to claim 1 further comprising:
the support film having an upper surface and a lower surface; and
the intermediate ring being positioned on the upper surface of the support film, and the substrate being positioned on the upper surface of the support film.
8. A method for plasma dicing a substrate, the method comprising:
providing a process chamber having a wall;
providing a plasma source adjacent to the wall of the process chamber;
providing a work piece support within the process chamber, the work piece support having an electrostatic chuck;
placing the substrate onto a support film on a frame to form a work piece;
providing an intermediate ring interposed between the substrate and the frame;
providing a cover ring between the plasma source and the work piece;
loading the work piece onto the work piece support;
generating a plasma through the plasma source; and
etching the work piece through the ge plasma.
9. The method according to 8 further comprising:
the electrostatic chuck having at least one clamping electrode; and
the intermediate ring overlapping said clamping electrode of the electrostatic chuck.
10. The method according to 8 further comprising:
the electrostatic chuck having at least one clamping electrode; and
the intermediate ring completely overlapping said clamping electrode of the electrostatic chuck.
11. The method according to 8 further comprising:
the intermediate ring having an inner diameter; and
the substrate having an outer diameter;
wherein the inner diameter of the intermediate ring being greater in size than the outer diameter of the substrate.
12. The method according to 8 wherein the intermediate ring being positioned coplanar with the substrate.
13. The method according to 8 wherein the intermediate ring further comprising one or more pieces.
14. The method according to 8 further comprising:
the support film having an upper surface and a lower surface; and
the intermediate ring being positioned on the upper surface of the support film, and the substrate being positioned on the upper surface of the support film.