Bonded semiconductor structure with SiGeC layer as etch stop

1. A method comprising:

forming a first wafer having a first bonding material;

forming a second wafer having a substrate, a SiGeC layer, an active layer and a second bonding material, the active layer being between the SiGeC layer and the second bonding material;

bonding the second wafer to the first wafer at the first and second bonding materials; and

removing the substrate using the SiGeC layer as an etch stop.

2. The method of claim 1 , wherein:

the SiGeC layer induces a strain in at least a portion of the active layer.

3. The method of claim 1 , further comprising:

removing the SiGeC layer.

4. The method of claim 1 , wherein:

the forming of the second wafer includes forming the SiGeC layer and the active layer prior to the bonding of the second wafer to the first wafer.

5. The method of claim 1 , wherein:

the second wafer is a bulk silicon wafer.

6. The method of claim 1 , wherein:

the active layer includes a gate and a channel; and

the bonding of the second wafer to the first wafer causes the gate to be between the channel and the first wafer.

7. The method of claim 1 , wherein:

the forming of the first wafer includes forming a trap rich layer therein.

8. A semiconductor structure comprising:

a first wafer;

a first bonding material at a surface of the first wafer;

a second wafer bonded to the first wafer;

an active layer within the second wafer; and

a second bonding material at a surface of the second wafer and being bonded to the first bonding material;

wherein a substrate has been removed from the second wafer on an opposite side of the active layer from the first wafer using a SiGeC layer as an etch stop.

9. The semiconductor structure of claim 8 , further comprising:

the SiGeC layer as also a strain-inducing layer.

10. The semiconductor structure of claim 8 , wherein:

the SiGeC layer has been removed.

11. The semiconductor structure of claim 8 , wherein:

the SiGeC layer and the active layer are formed within the second wafer prior to bonding the first wafer to the second wafer.

12. The semiconductor structure of claim 8 , wherein:

the second wafer is a bulk silicon wafer prior to formation of the active layer and the SiGeC layer therein.

13. The semiconductor structure of claim 8 , wherein:

the active layer includes a gate and a channel, the gate being between the channel and the first wafer.

14. The semiconductor structure of claim 8 , further comprising:

a trap rich layer within the first wafer.

15. A semiconductor structure comprising:

a handle wafer;

a first bonding material within the handle wafer;

a bulk silicon wafer bonded to the handle wafer;

an active layer within the bulk silicon wafer;

a second bonding material within the bulk silicon wafer and being bonded to the first bonding material; and

a SiGeC layer within the bulk silicon wafer on an opposite side of the active layer from the handle wafer;

wherein a substrate has been removed from the bulk silicon wafer using the SiGeC layer as an etch stop; and

wherein the handle wafer provides structural strength for the semiconductor structure.

16. The semiconductor structure of claim 15 , further comprising:

the SiGeC layer as also a strain-inducing layer.

17. The semiconductor structure of claim 15 , wherein:

the SiGeC layer has been removed.

18. The semiconductor structure of claim 15 , wherein:

the SiGeC layer and the active layer are formed within the bulk silicon wafer prior to bonding the handle wafer to the bulk silicon wafer.

19. The semiconductor structure of claim 15 , wherein:

the active layer includes a gate and a channel, the gate being between the channel and the handle wafer.

20. The semiconductor structure of claim 15 , further comprising:

a trap rich layer within the handle wafer.