Heat dissipating component for semiconductor element
Disclosed is a heat dissipating component for a semiconductor element, having a tabular body 0.4-6 mm in thickness containing 40-70 volume % of diamond particles, with the balance comprising metal of which the principal component is aluminum, and coated on both surfaces by a coating layer comprising metal of which the principal component is aluminum, or an aluminum-ceramic based composite material, to form an aluminum-diamond based composite body. On at least the two major surfaces thereof are formed, in order from the major surface side, (1) an amorphous Ni alloy layer 0.1-1 μm in film thickness, (2) an Ni layer 1-5 μm in film thickness, and (3) an Au layer 0.05-4 μm in film thickness, the ratio of the Ni alloy layer and the Ni layer (Ni alloy layer thickness/Ni layer thickness) being 0.3 or less.
1. A heat dissipating component for a semiconductor element, comprising
an aluminum-diamond composite formed by covering both main faces of a plate-shaped body of thickness 0.4 to 6 mm comprising 40 vol % to 70 vol % diamond particles, the balance consisting of a metal having aluminum as a main component, with a covering layer consisting of a metal having aluminum as a main component or an aluminum-ceramic composite material;
wherein (1) an amorphous Ni alloy layer of film thickness 0.1 to 1 μm, (2) a Ni layer of film thickness 1 to 5 μm, and (3) an Au layer of film thickness 0.05 to 4 μm are formed, sequentially from a main face side, on both main faces of the aluminum-diamond composite, such that a ratio between the Ni alloy layer and the Ni layer (Ni alloy layer thickness/Ni layer thickness) is 0.3 or less.
2. The heat dissipating component of claim 1 , wherein the covering layer is a metal layer of film thickness 0.03 to 0.2 mm comprising at least 80 vol % of a metal having aluminum as a main component.
3. The heat dissipating component of claim 1 , wherein the covering layer is a layer comprising, from a plate-shaped body side, an aluminum-ceramic composite layer of film thickness 0.05 to 0.2 mm, and a metal layer of film thickness 0.1 to 2 μm, having aluminum as a main component.
4. The heat dissipating component of claim 1 , wherein the covering layer is an aluminum-ceramic fiber composite layer of film thickness 0.05 to 0.2 mm comprising at least 80 vol % of a metal having aluminum as a main component.
5. The heat dissipating component of any one of claims 1 to 4 , wherein the Ni alloy layer, Ni layer and Au layer are formed by plating, the underlying Ni alloy layer is formed by electroless plating pre-treated by zinc substitution, and the peel strength of the plating film is at least 5 kg/cm.
6. The heat dissipating element of any one of claims 1 to 4 , wherein the semiconductor element is an RF element or semiconductor laser element consisting of GaN, GaAs or SiC.
7. The heat dissipating element of any one of claims 1 to 4 , wherein the aluminum-diamond composite is produced by squeeze casting.
8. The heat dissipating element of claim 1 or 2 , wherein the aluminum-diamond composite has a thermal conductivity at 25° C. of at least 400 W/mK and a coefficient of thermal expansion from 25° C. to 150° C. of 5×10 −6 to 10×10 −6 /K.
9. The heat dissipating element of claim 1 or 2 , wherein the aluminum-diamond composite is an aluminum-diamond composite in which the diamond particles are characterized by the presence of a layer of β-type silicon carbide chemically bonded to a surface thereof.