Method for fabricating semiconductor device
A manufacturing method of a semiconductor device comprises the following steps. First, a substrate is provided, at least one fin structure is formed on the substrate, and a metal layer is then deposited on the fin structure to form a salicide layer. After depositing the metal layer, the metal layer is removed but no RTP is performed before the metal layer is removed. Then a RTP is performed after the metal layer is removed.
1. A manufacturing method of a semiconductor device, comprising:
providing a substrate, with at least one fin structure on the substrate;
depositing a metal layer on the fin structure to form a silicide layer;
removing the metal layer, wherein no RTP (Rapid Thermal Process) is performed before the metal layer is removed, and;
performing a RTP after the metal layer is removed.
2. The manufacturing method of a semiconductor device of claim 1 , further comprising forming a STI surrounding the fin structure.
3. The manufacturing method of a semiconductor device of claim 1 , further comprising forming an epitaxy layer on the fin structure before depositing the metal layer.
4. The manufacturing method of a semiconductor device of claim 1 , further comprising forming a gate on parts of the fin structure.
5. The manufacturing method of a semiconductor device of claim 4 , wherein the gate comprises a polysilicon gate or a metal gate.
6. The manufacturing method of a semiconductor device of claim 1 , wherein the temperature of the RTP is between 400° C. and 600° C.
7. The manufacturing method of a semiconductor device of claim 1 , further comprising forming a plurality of contacts on the silicide layer.
8. The manufacturing method of a semiconductor device of claim 1 , wherein the contacts comprise slot contacts or pole contacts.
9. A manufacturing method of a semiconductor device, comprising:
providing a substrate, with at least one fin structure on the substrate;
depositing a metal layer on the fin structure to form a silicide layer;
performing a low temperature thermal process after the metal layer is deposited, wherein the temperature of the low temperature thermal process is between 80° C. and 120° C.;
removing the metal layer, and;
performing a RTP after the metal layer is removed.
10. The manufacturing method of a semiconductor device of claim 9 , further comprising forming a STI surrounding the fin structure.
11. The manufacturing method of a semiconductor device of claim 9 , further comprising forming an epitaxy layer on the fin structure before depositing the metal layer.
12. The manufacturing method of a semiconductor device of claim 9 , further comprising forming a gate on parts of the fin structure.
13. The manufacturing method of a semiconductor device of claim 12 , wherein the gate comprises a polysilicon gate or a metal gate.
14. The manufacturing method of a semiconductor device of claim 9 , wherein the temperature of the RTP is between 400° C. and 600° C.
15. The manufacturing method of a semiconductor device of claim 9 , further comprising forming a plurality of contacts on the silicide layer.
16. The manufacturing method of a semiconductor device of claim 9 , wherein the contacts comprise slot contacts or pole contacts.