3D device packaging using through-substrate posts
View Patent ↗A method for 3D device packaging utilizes through-hole metal post techniques to mechanically and electrically bond two or more dice. The first die includes a set of through-holes extending from a first surface of the first die to a second surface of the first die. The second die includes a third surface and a set of metal posts. The first die and the second die are stacked such that the third surface of the second die faces the second surface of the first die, and each metal post extends through a corresponding through-hole to a point beyond the first surface of the first die, electrically coupling the first die and the second die.
1. A device package comprising:
a first semiconductor die comprising:
a first set of through-holes in a first arrangement, each through-hole of the first set of through-holes extending between a first surface of the first semiconductor die and a second surface of the first semiconductor die; and
a second semiconductor die comprising:
a first set of metal posts disposed at a third surface of the second semiconductor die in a second arrangement corresponding to the first arrangement, the third surface facing the second surface, and each metal post of the first set of metal posts extending through a corresponding through-hole of the first set of through-holes to a point beyond the first surface of the first semiconductor die.
2. The device package of claim 1 , wherein the metal posts of the first set of metal posts comprise at least one of pillars and stud bumps.
3. The device package of claim 1 , wherein
the second semiconductor die further comprises a set of pads at the third surface; and
the through-holes of the first set of through-holes further extend through the set of pads.
4. The device package of claim 1 , further comprising:
a third semiconductor die comprising:
a fourth surface; and
a set of holes, such that the fourth surface faces the third surface of the second semiconductor die and the first surface of the first semiconductor die, and such that each metal post of a second set of metal posts of the third semiconductor die extends into the set of holes of the third semiconductor die.
5. The device package of claim 4 , wherein the metal posts of the second set of metal posts comprise at least one of pillars and stud bumps.
6. The device package of claim 1 , further comprising:
a third semiconductor die comprising:
a fourth surface; and
a set of holes, such that the fourth surface faces the third surface of the second semiconductor die and the first surface of the first semiconductor die and the first set of metal posts extend through the set of holes.
7. The device package of claim 6 , wherein the metal posts of the first set of metal posts comprise at least one of pillars and stud bumps.
8. The device package of claim 6 , wherein:
the set of holes comprises a set of access holes extending from the fourth surface of the third semiconductor die to a set of pads at a metal layer of the third semiconductor die; and
each metal post of the first set of metal posts is electrically coupled to a corresponding pad of the set of pads.
9. The device package of claim 6 , wherein the set of holes comprises a second set of through-holes extending through the third semiconductor die.
10. A method comprising:
stacking a first semiconductor die and a second semiconductor die, such that a first surface of the first semiconductor die faces a second surface of the second semiconductor die and such that each metal post of a first set of metal posts of the first semiconductor die extends from the first surface of the first semiconductor die beyond a third surface of the second semiconductor die opposite the second surface via a corresponding through-hole of a first set of through-holes of the second semiconductor die; and
bonding the first semiconductor die and the second semiconductor die such that the metal posts of the first set of metal posts are electrically coupled to the second semiconductor die.
11. The method of claim 10 , wherein the metal posts of the first set of metal posts comprise at least one of pillars and stud bumps.
12. The method of claim 10 , wherein the through-holes of the first set of through-holes further extend through a set of pads at the third surface of the second semiconductor die.
13. The method of claim 10 , further comprising:
stacking a third semiconductor die comprising a fourth surface and a set of holes, such that the fourth surface faces the third surface of the second semiconductor die and the first surface of the first semiconductor die, and such that each metal post of a second set of metal posts of the third semiconductor die extends into the set of holes of the third semiconductor die; and
bonding the second semiconductor die and the third semiconductor die such that the metal posts of the second set of metal posts are electrically coupled to the third semiconductor die.
14. The method of claim 10 , further comprising:
stacking a third semiconductor die comprising a fourth surface and a set of holes, such that the fourth surface faces the third surface of the second semiconductor die and the first surface of the first semiconductor die and the first set of metal posts extend through the set of holes; and
bonding the first semiconductor die and the third semiconductor die such that the metal posts of the first set of metal posts are electrically coupled to the third semiconductor die.
15. The method of claim 14 , wherein:
the set of holes comprises a set of access holes extending from the fourth surface of the third semiconductor die to a set of pads at a metal layer of the third semiconductor die; and
each metal post of the first set of metal posts is electrically coupled to a corresponding pad of the set of pads.
16. The method of claim 14 , wherein the set of holes comprises a second set of through-holes extending through the third semiconductor die.
17. A method comprising:
forming a set of through-holes in a first arrangement at a first semiconductor die, each through-hole of the set of through-holes extending through the first semiconductor die from a first surface of the first semiconductor die to a second surface of the first semiconductor die; and
bonding the first semiconductor die and a second semiconductor die, the second semiconductor die comprising a set of metal posts disposed at a surface of the second semiconductor die in a second arrangement corresponding to the first arrangement, the set of metal posts extending through the first semiconductor die beyond the second surface via the set of through-holes.
18. The method of claim 17 , wherein each through-hole of the set of through-holes comprises at least one substantially flat wall that provides a gap between the through-hole and the corresponding metal post extending through the through-hole.
19. The method of claim 17 , further comprising:
forming a set of metal annular ring structures within the first semiconductor die, each annular ring structure forming a boundary of a corresponding through-hole of the set of through-holes.
20. The method of claim 17 , further comprising:
forming a dielectric barrier in each through-hole of the set of through-holes between one or more layers of the first semiconductor die and the corresponding metal post of the set of metal posts.