Tantalum sputtering target, method for manufacturing same, and barrier film for semiconductor wiring formed by using target

1. A tantalum sputtering target, wherein an average crystal grain size of the target is 50 μm or more and 200 μm or less, and variation of a crystal grain size in the target plane is 40% or higher and 50% or less on a surface of the target, wherein the variation is defined as a ratio of standard deviation to an average of five average crystal grain sizes measured at five different locations selected on the surface of the sputtering target.

2. A method of producing a tantalum sputtering target wherein an ingot or a billet obtained by subjecting a tantalum raw material to electron beam melting and casting is heat treated at a temperature of 900° C. or higher and 1400° C. lower, subsequently subjected to cold forging processing consisting of upset forging and extend forging by a total amount of true strain of 3.0 or more and 5.0 or less, thereafter heat-treated at 850° C. or higher and 1100° C. lower subsequently rolled at a rolling reduction of 80% or higher and 90% or less, thereafter heat-treated at 750° C. or higher and 1000° C. lower, and additionally subject to finish processing to obtain a target, wherein an average crystal grain size of the target is 50 micrometers or more and 200 micrometers or less, and a variation of crystal grain size in a target plane is 40% or higher and 50% or less on a surface of the target, wherein the variation is defined as a ratio of standard deviation to an average of five average crystal grain sizes measured at five different locations selected on the surface of the sputtering target.