Method for manufacturing a silicon nitride thin film using plasma-enhanced chemical vapor deposition
A method for manufacturing a silicon nitride thin film comprises a step of charging silane, ammonia gas and nitrogen gas at an environment temperature below 350° C. to produce and deposit a silicon nitride thin film, wherein a rate of charging silane is 300-350 sccm, a rate of charging ammonia gas is 1000 sccm, a rate of charging nitrogen gas is 1000 sccm; a power of a high frequency source is 0.15˜0.30 KW, a power of a low frequency source is 0.15˜0.30 KW; a reaction pressure is 2.3˜2.6 Torr; a reaction duration is 4˜6 s. The above method for manufacturing a silicon nitride thin film provides a preferable parameter range and preferred parameters for generating a low-stress SIN thin film at low temperatures, achieves manufacture of a low-stress SIN thin film at low temperatures, and thus, better satisfies the situation requiring a low-stress SIN thin film.
1. A method for manufacturing a silicon nitride thin film comprising a charging silane, ammonia gas and diluent gas at an environment temperature below 350° C. to produce and deposit a silicon nitride thin film, wherein,
a rate of charging silane is 300-350 sccm, and a rate of charging ammonia gas is 1000 sccm;
a power of a high frequency source is 0.15˜0.30 KW and a power of a low frequency source is 0.15˜0.30 KW;
a reaction pressure is 2.3˜2.6 Torr; and
a reaction duration is 4˜6 s,
wherein the silicon nitride thin film has a stress within 50±MPa at the temperature below 350° C.
2. The method for manufacturing a silicon nitride thin film according to claim 1 , wherein the environment temperature is 300° C.
3. The method for manufacturing a silicon nitride thin film according to claim 1 , wherein,
the rate of charging silane is 340 sccm, and the rate of charging ammonia gas is 1000 sccm;
the power of the high frequency source is 0.18 KW and the power of the low frequency source is 0.25 KW;
the reaction pressure is 2.6 Torr; and
the reaction duration is 5 s.
4. The method for manufacturing a silicon nitride thin film according to claim 1 , wherein the diluent gas is nitrogen gas.
5. The method for manufacturing a silicon nitride thin film according to claim 4 , wherein the rate of charging nitrogen gas is 1000 sccm.
6. The method for manufacturing a silicon nitride thin film according to claim 1 , wherein the silicon nitride thin film has a stress within 50±MPa at a reaction pressure of 2.3 Torr.
7. The method for manufacturing a silicon nitride thin film according to claim 1 , wherein the silicon nitride thin film has a stress within 50±MPa at a reaction pressure of 2.6 Torr.
8. The method for manufacturing a silicon nitride thin film according to claim 1 , wherein the reaction duration is 4 s.
9. A method for manufacturing a silicon nitride thin film comprising a charging silane, ammonia gas and diluent gas at an environment temperature below 350° C. to produce and deposit a silicon nitride thin film, wherein,
a rate of charging silane is 300-350 sccm, and a rate of charging ammonia gas is 1000 sccm;
a power of a high frequency source is 0.15˜0.30 KW and a power of a low frequency source is 0.15˜0.30 KW;
a reaction pressure is 2.3˜2.6 Torr; and
a reaction duration is 4˜6 s,
wherein the silicon nitride thin film has a stress within 50±MPa at a reaction pressure of 2.3 Torr.
10. The method for manufacturing a silicon nitride thin film according to claim 9 , wherein the environment temperature is 300° C.
11. The method for manufacturing a silicon nitride thin film according to claim 9 , wherein,
the rate of charging silane is 340 sccm, and the rate of charging ammonia gas is 1000 sccm;
the power of the high frequency source is 0.18 KW and the power of the low frequency source is 0.25 KW;
the reaction pressure is 2.6 Torr; and
the reaction duration is 5 s.
12. The method for manufacturing a silicon nitride thin film according to claim 9 , wherein the diluent gas is nitrogen gas.
13. The method for manufacturing a silicon nitride thin film according to claim 9 , wherein the rate of charging nitrogen gas is 1000 sccm.
14. The method for manufacturing a silicon nitride thin film according to claim 9 , wherein the reaction duration is 4 s.
15. A method for manufacturing a silicon nitride thin film comprising a charging silane, ammonia gas and diluent gas at an environment temperature below 350° C. to produce and deposit a silicon nitride thin film, wherein,
a rate of charging silane is 300-350 sccm, and a rate of charging ammonia gas is 1000 sccm;
a power of a high frequency source is 0.15˜0.30 KW and a power of a low frequency source is 0.15˜0.30 KW;
a reaction pressure is 2.3˜2.6 Torr; and
a reaction duration is 4˜6 s,
wherein the silicon nitride thin film has a stress within 50±MPa at a reaction pressure of 2.6 Torr.
16. The method for manufacturing a silicon nitride thin film according to claim 15 , wherein the environment temperature is 300° C.
17. The method for manufacturing a silicon nitride thin film according to claim 15 , wherein,
the rate of charging silane is 340 sccm, and the rate of charging ammonia gas is 1000 sccm;
the power of the high frequency source is 0.18 KW and the power of the low frequency source is 0.25 KW;
the reaction pressure is 2.6 Torr; and
the reaction duration is 5 s.
18. The method for manufacturing a silicon nitride thin film according to claim 15 , wherein the diluent gas is nitrogen gas.
19. The method for manufacturing a silicon nitride thin film according to claim 15 , wherein the rate of charging nitrogen gas is 1000 sccm.
20. The method for manufacturing a silicon nitride thin film according to claim 15 , wherein the reaction duration is 4 s.