Method for chemical mechanical polishing substrates containing ruthenium and copper

1. A method for chemical mechanical polishing of a substrate, comprising:

providing a polishing machine;

providing a substrate, wherein the substrate comprises ruthenium and copper;

providing a chemical mechanical polishing slurry composition comprising, as initial components:

water;

5 to 15 wt % of an abrasive, wherein the abrasive is a colloidal silica abrasive having an average particle size of 1 to 100 nm;

0.05 to 1 wt % of sodium hypochlorite or potassium hypochlorite;

0.001 to 1 wt % of a copolymer of acrylic acid and methacrylic acid, wherein the copolymer of acrylic acid and methacrylic acid has an acrylic acid to methacrylic acid ratio of 1:5 to 5:1 and a weight average molecular weight of 10,000 to 50,000 g/mol;

0.005 to 1 wt % of a corrosion inhibitor for copper, wherein the corrosion inhibitor for copper is benzotriazole;

0.0005 to 0.005 wt % of the poly(methylvinyl ether), wherein the poly(methylvinyl ether) has a weight average molecular weight of 10,000 to 50,000 g/mol;

0.005 to 0.05 wt % of a non-ionic surfactant, wherein the non-ionic surfactant is a polyethylene glycol sorbitan monolaurate;

wherein the chemical mechanical polishing slurry composition has a pH 8 to 12;

providing a chemical mechanical polishing pad;

installing the chemical mechanical polishing pad and the substrate in the chemical mechanical polishing machine;

creating dynamic contact between the chemical mechanical polishing pad and the substrate with a down force of 0.69 to 34.5 kPa;

dispensing the chemical mechanical polishing slurry composition in proximity to an interface between the chemical mechanical polishing pad and the substrate;

wherein the chemical mechanical polishing slurry composition comes into contact with ruthenium and copper of the substrate; wherein the substrate is polished; and, wherein some of the ruthenium is removed from the substrate.

2. The method of claim 1 ,

wherein the chemical mechanical polishing slurry composition has a pH 9 to 11.

3. The method of claim 2 , wherein the colloidal silica abrasive has an average particle size of 25 to 85 nm.

4. The method of claim 2 , wherein the copolymer of acrylic acid and methacrylic acid has a weight average molecular weight of 20,000 to 25,000 g/mol.

5. The method of claim 2 , wherein the polymethylvinyl ether has a weight average molecular weight of 25,000 to 40,000 g/mol.

6. The method of claim 2 , wherein the colloidal silica abrasive has an average particle size of 25 to 85 nm; wherein the copolymer of acrylic acid and methacrylic acid has a weight average molecular weight of 20,000 to 25,000 g/mol; and, wherein the polymethylvinyl ether has a weight average molecular weight of 25,000 to 40,000 g/mol.

7. The method of claim 2 , wherein the chemical mechanical polishing slurry composition comprises, as initial components:

water;

7 to 12 wt % of the colloidal silica abrasive, wherein the colloidal silica abrasive has an average particle size of 25 to 85 nm;

0.07 to 1 wt % of sodium hypochlorite;

0.01 to 0.1 wt % of the copolymer of acrylic acid and methacrylic acid, wherein the copolymer of acrylic acid and methacrylic acid has an acrylic acid to methacrylic acid ratio of 1:5 to 5:1 and a weight average molecular weight of 15,000 to 30,000 g/mol;

0.03 to 0.05 wt % of the benzotriazole;

0.001 to 0.0025 wt % of the poly(methylvinyl ether), wherein the poly(methylvinyl ether) has a weight average molecular weight of 25,000 to 40,000 g/mol;

0.0075 to 0.015 wt % of the non-ionic surfactant, wherein the non-ionic surfactant is a polyethylene glycol sorbitan monolaurate;

wherein the chemical mechanical polishing slurry composition has a pH 10 to 11.

8. The method of claim 7 , wherein the chemical mechanical polishing slurry composition comprises, as an initial component: 0.075 to 0.5 wt % sodium hypochlorite.

9. The method of claim 7 , wherein the chemical mechanical polishing slurry composition comprises, as an initial component: 0.05 to 0.075 wt % of the copolymer of polyacrylic acid and methacrylic acid, wherein the copolymer has an acrylic acid to methacrylic acid ratio 2:3 and a weight average molecular weight of 20,000 to 25,000 g/mol.

10. The method of claim 7 , wherein the chemical mechanical polishing slurry composition comprises, as an initial component: 0.075 to 0.5 wt % sodium hypochlorite; and, 0.05 to 0.075 wt % of the copolymer of polyacrylic acid and methacrylic acid, wherein the copolymer has an acrylic acid to methacrylic acid ratio 2:3 and a weight average molecular weight of 20,000 to 25,000 g/mol.