IP Library Granted Patent US 9,196,511
Granted Patent B2
US 9,196,511 · App. 14/484,843 · Granted Nov 24, 2015

Semiconductor die singulation methods

Inventors: Gordon M. Grivna (Mesa, AZ); James M. Parsey, Jr. (Phoenix, AZ)
Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
H01L21/67092B28D5/0011H01L21/78Y10T83/0333
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Quick Facts
Patent No.
US 9,196,511
App. No.
14/484,843
Granted
Nov 24, 2015
Kind
B2
Abstract

In one embodiment, a method of singulating semiconductor die from a semiconductor wafer includes forming a material on a surface of a semiconductor wafer and reducing a thickness of portions of the material. Preferably, the thickness of the material is reduced near where singulation openings are to be formed in the semiconductor wafer.

Claims (14)

1. A cutting tool comprising:

a central support section having a major axis;

a cutting tip;

a cutting surface adjacent to the cutting tip and extending from the cutting tip toward the central support section terminating in a distal end of the cutting surface wherein the cutting surface is attached to the central support section;

a depth stop spaced a first distance from the cutting tip toward the central support section wherein a first volume is formed by a portion of the cutting surface extending from the cutting tip to the depth stop; and

an accumulation region adjacent to the central support section and extending away from the cutting surface, the accumulation region having a second volume that approximates the first volume.

2. The cutting tool of claim 1 wherein the accumulation region extends from the distal end of the cutting surface away from the cutting tip.

3. The cutting tool of claim 1 wherein the depth stop has a first portion that is configured to engage with a surface of a conductor on a semiconductor wafer to limit a depth of penetration of the cutting tip into the conductor.

4. The cutting tool of claim 1 wherein the central support section is rotatingly coupled to the cutting surface.

5. The cutting tool of claim 1 wherein the cutting surface angularly extends from the cutting tip to the central support section.

6. The cutting tool of claim 1 wherein the accumulation region is formed as a recess disposed within the central support section, the accumulation region positioned adjacent to the distal end of the cutting surface and extending from the distal end of the cutting surface into the central support section.

7. The cutting tool of claim 6 wherein the accumulation region has a width extending laterally across the central support section.

8. The cutting tool of claim 6 wherein the depth stop is formed as a surface of the central support section that extends from a distal end of the accumulation region away from the accumulation region.

9. The cutting tool of claim 1 wherein the depth stop is formed as a surface of a spacer attached to the central support section.

Assignments (4)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 038620, FRAME 0087 Recorded Jun 22, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064070/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE INCORRECT PATENT NUMBER 5859768 AND TO RECITE COLLATERAL AGENT ROLE OF RECEIVING PARTY IN THE SECURITY INTEREST PREVIOUSLY RECORDED ON REEL 038620 FRAME 0087. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Aug 25, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 039853/0001 →
SECURITY INTEREST Recorded Apr 15, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 038620/0087 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 12, 2014
From: GRIVNA, GORDON M.; PARSEY, JOHN M., JR.
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 033731/0338 →
Continuity (4)
Division 13486675 · Jun 1, 2012
Continuation In Part 12749370 · Mar 29, 2010
Continuation 11834924 · Aug 7, 2007
Related Publication 20150027290A1 · Jan 29, 2015