Latch initialization for a data storage device
A data storage device may include a memory die. The memory die includes a memory and a latch. A method may include receiving a command corresponding to a write operation to write information to the memory. The method may further include loading a set of bits into the latch prior to receiving the information at the memory die. The set of bits includes at least a first bit having a first value and a second bit having a second value that is different than the first value. The method further includes receiving the information at the memory die and overwriting at least a portion of the set of bits at the latch with the information.
1. A method comprising:
in a data storage device that includes a memory die, wherein the memory die includes a memory and a latch, performing at the memory die:
receiving a command corresponding to a write operation to write information to the memory;
prior to receiving the information at the memory die, loading a set of bits into the latch, wherein the set of bits includes at least a first bit having a first value and a second bit having a second value that is different than the first value;
receiving the information at the memory die; and
overwriting at least a portion of the set of bits at the latch with the information.
2. The method of claim 1 , wherein the set of bits includes a random or a pseudorandom bit sequence.
3. The method of claim 1 , wherein the set of bits is retrieved from the memory die.
4. The method of claim 1 , wherein the set of bits has a bit length that is equal to a page length associated with a page of the memory.
5. The method of claim 1 , wherein the set of bits includes multiple copies of a particular bit pattern, wherein the particular bit pattern has a bit length that is less than a page length associated with the memory.
6. The method of claim 1 , wherein the memory has a three-bit-per-cell multi-level cell (MLC) architecture, wherein the write operation is for writing an upper page, a middle page, or a lower page, and wherein the set of bits is selected from multiple sets of bits associated with upper pages, middle pages, and lower pages.
7. The method of claim 1 , wherein the memory has a two-bit-per-cell multi-level cell (MLC) architecture, wherein the write operation is for writing an upper page or a lower page, and wherein the set of bits is selected from multiple sets of bits associated with upper pages and lower pages.
8. The method of claim 1 , wherein the command indicates an address of the memory, and further comprising selecting the set of bits from multiple sets of bits based on the address.
9. The method of claim 8 , wherein the address includes a page index indicating a particular page within a particular block of the memory, and wherein each page of the block is associated with a respective one of the multiple sets of bits.
10. The method of claim 8 , wherein the multiple sets of bits include a first set of bits reserved for a first subset of pages associated with a first set of page indices and further include a second set of bits reserved for a second subset of pages associated with a second set of page indices.
11. The method of claim 1 , further comprising randomly or pseudo-randomly selecting the set of bits from among multiple sets of bits in response to receiving the command.
12. The method of claim 1 , wherein the command includes an indication identifying the set of bits from among multiple sets of bits.
13. The method of claim 12 , wherein the indication is received from a controller coupled to the memory die or from a host device.
14. The method of claim 1 , further comprising generating the set of bits in response to receiving the command.
15. The method of claim 14 , wherein the set of bits is generated randomly or pseudo-randomly.
16. The method of claim 1 , wherein the memory has a three-dimensional (3D) memory configuration that is monolithically formed in one or more physical levels of arrays of memory cells having an active area above a silicon substrate, and wherein the memory die includes circuitry associated with operation of the memory cells.
17. A data storage device comprising:
a memory;
a latch;
initialization circuitry, wherein the initialization circuitry is configured to load a set of bits into the latch to initialize the latch for a write process, and wherein the set of bits includes at least a first bit having a first value and a second bit having a second value that is different than the first value; and
read/write circuitry, wherein the read/write circuitry is configured to perform the write process at the memory after information is received at the latch and after the information overwrites at least a portion of the set of bits at the latch.
18. The data storage device of claim 17 , wherein the initialization circuitry is further configured to load the set of bits into the latch in response to receiving a command from a host device and to retrieve the set of bits prior to loading the set of bits into the latch.
19. The data storage device of claim 17 , wherein the set of bits includes a random or a pseudorandom bit sequence.
20. The data storage device of claim 17 , wherein the set of bits has a bit length that is equal to a page length associated with a page of the memory.
21. The data storage device of claim 17 , wherein the set of bits includes multiple copies of a particular bit pattern, wherein the particular bit pattern has a bit length that is less than a page length associated with the memory.
22. The data storage device of claim 17 , wherein the memory has a three-bit-per-cell multi-level cell (MLC) architecture, wherein the write process is for writing an upper page, a middle page, or a lower page, and wherein the initialization circuitry is further configured to select the set of bits from multiple sets of bits associated with upper pages, middle pages, and lower pages.
23. The data storage device of claim 17 , wherein the memory has a two-bit-per-cell multi-level cell (MLC) architecture, wherein the write process is for writing an upper page or a lower page, and wherein the initialization circuitry is further configured to select the set of bits from multiple sets of bits associated with upper pages and lower pages.
24. The data storage device of claim 17 , wherein the initialization circuitry is further configured to select the set of bits from among multiple sets of bits based on an address of the memory associated with the write process.
25. The data storage device of claim 24 , wherein the address includes a page index indicating a particular page within a particular block of the memory, and wherein each page of the block is associated with a respective one of the multiple sets of bits.
26. The data storage device of claim 24 , wherein the multiple sets of bits include a first set of bits reserved for a first subset of pages associated with a first set of page indices and further include a second set of bits reserved for a second subset of pages associated with a second set of page indices.
27. The data storage device of claim 17 , wherein the initialization circuitry is further configured to randomly or pseudo-randomly select the set of bits from among multiple sets of bits.
28. The data storage device of claim 17 , wherein the initialization circuitry is further configured to receive an indication identifying the set of bits from among multiple sets of bits.
29. The data storage device of claim 28 , wherein the indication is received either from a controller or from a host device.
30. The data storage device of claim 17 , wherein the initialization circuitry is further configured to generate the set of bits.
31. The data storage device of claim 30 , wherein the initialization circuitry is further configured to randomly or pseudo-randomly generate the set of bits.
32. The data storage device of claim 17 , wherein the memory has a three-dimensional (3D) memory configuration that is monolithically formed in one or more physical levels of arrays of memory cells having an active area above a silicon substrate, and wherein the read/write circuitry is associated with operation of the memory cells.
33. An apparatus comprising:
a latch;
a memory having a three-dimensional (3D) memory configuration that is monolithically formed in one or more physical levels of arrays of memory cells having an active area above a silicon substrate;
initialization circuitry configured to load a set of bits into the latch to initialize the latch for a write process, the set of bits including at least a first bit having a first value and a second bit having a second value that is different than the first value; and
write circuitry configured to perform the write process at the memory after information is received at the latch and after the information overwrites at least a portion of the set of bits at the latch, the write circuitry associated with operation of the memory cells.
34. The apparatus of claim 33 , further comprising a controller configured to cause the initialization circuitry to initialize the latch in connection with the write process.