IP Library › Granted Patent US 9,368,519
Granted Patent B2
US 9,368,519 · App. 14/522,817 · Granted Jun 14, 2016

Semiconductor device and electronic appliance

Inventors: Jun Koyama (Kanagawa, JP); Atsushi Umezaki (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L27/124H03K17/687H03K19/0013H03K19/018571
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Quick Facts
Patent No.
US 9,368,519
App. No.
14/522,817
Granted
Jun 14, 2016
Kind
B2
Abstract

The amplitude voltage of a signal input to a level shifter can be increased and then output by the level shifter circuit. Specifically, the amplitude voltage of the signal input to the level shifter can be increased to be output. This decreases the amplitude voltage of a circuit (a shift register circuit, a decoder circuit, or the like) which outputs the signal input to the level shifter. Consequently, power consumption of the circuit can be reduced. Alternatively, a voltage applied to a transistor included in the circuit can be reduced. This can suppress degradation of the transistor or damage to the transistor.

Claims (218)

1. A semiconductor device comprising:

a first transistor;

a second transistor;

a third transistor;

a fourth transistor;

a fifth transistor; and

a sixth transistor,

wherein a first terminal of the first transistor is electrically connected to a first wiring, and a second terminal of the first transistor is electrically connected to a second wiring,

wherein a first terminal of the second transistor is electrically connected to a third wiring, and a second terminal of the second transistor is electrically connected to the second wiring,

wherein a first terminal of the third transistor is electrically connected to the first wiring or a ninth wiring, a second terminal of the third transistor is electrically connected to a gate of the first transistor, and a gate of the third transistor is electrically connected to a fourth wiring,

wherein a first terminal of the fourth transistor is electrically connected to a seventh wiring, a second terminal of the fourth transistor is electrically connected to the gate of the first transistor, and a gate of the fourth transistor is electrically connected to a gate of the second transistor,

wherein a first terminal of the fifth transistor is electrically connected to a fifth wiring, a second terminal of the fifth transistor is electrically connected to the gate of the second transistor, and a gate of the fifth transistor is electrically connected to a sixth wiring, and

wherein a first terminal of the sixth transistor is electrically connected to an eighth wiring, a second terminal of the sixth transistor is electrically connected to the gate of the second transistor, and a gate of the sixth transistor is electrically connected to the fourth wiring.

2. A semiconductor device comprising:

a first transistor;

a second transistor;

a third transistor;

a fourth transistor;

a fifth transistor; and

a sixth transistor,

wherein a first terminal of the first transistor is electrically connected to a first wiring, and a second terminal of the first transistor is electrically connected to a second wiring,

wherein a first terminal of the second transistor is electrically connected to a third wiring, and a second terminal of the second transistor is electrically connected to the second wiring,

wherein a first terminal of the third transistor is electrically connected to a gate of the third transistor, a second terminal of the third transistor is electrically connected to a gate of the first transistor, and the gate of the third transistor is electrically connected to a fourth wiring,

wherein a first terminal of the fourth transistor is electrically connected to the third wiring, a second terminal of the fourth transistor is electrically connected to the gate of the first transistor, and a gate of the fourth transistor is electrically connected to a gate of the second transistor,

wherein a first terminal of the fifth transistor is electrically connected to a fifth wiring, a second terminal of the fifth transistor is electrically connected to the gate of the second transistor, and a gate of the fifth transistor is electrically connected to the second terminal of the fifth transistor, and

wherein a first terminal of the sixth transistor is electrically connected to the third wiring, a second terminal of the sixth transistor is electrically connected to the gate of the second transistor, and a gate of the sixth transistor is electrically connected to the fourth wiring.

3. A semiconductor device comprising:

a first transistor;

a second transistor;

a third transistor;

a fourth transistor;

a fifth transistor; and

a sixth transistor,

wherein a first terminal of the first transistor is electrically connected to a first wiring, and a second terminal of the first transistor is electrically connected to a second wiring,

wherein a first terminal of the second transistor is electrically connected to a third wiring, and a second terminal of the second transistor is electrically connected to the second wiring,

wherein a first terminal of the third transistor is electrically connected to a gate of the third transistor, a second terminal of the third transistor is electrically connected to a gate of the first transistor, and the gate of the third transistor is electrically connected to a fourth wiring,

wherein a first terminal of the fourth transistor is electrically connected to the third wiring, a second terminal of the fourth transistor is electrically connected to the gate of the first transistor, and a gate of the fourth transistor is electrically connected to a gate of the second transistor,

wherein a first terminal of the fifth transistor is electrically connected to the first wiring, a second terminal of the fifth transistor is electrically connected to the gate of the second transistor, and a gate of the fifth transistor is electrically connected to a sixth wiring, and

wherein a first terminal of the sixth transistor is electrically connected to the third wiring, a second terminal of the sixth transistor is electrically connected to the gate of the second transistor, and a gate of the sixth transistor is electrically connected to the fourth wiring.

4. A semiconductor device comprising:

a first transistor;

a second transistor;

a third transistor;

a fourth transistor;

a fifth transistor; and

a sixth transistor,

wherein a first terminal of the first transistor is electrically connected to a first wiring, and a second terminal of the first transistor is electrically connected to a second wiring,

wherein a first terminal of the second transistor is electrically connected to a third wiring, and a second terminal of the second transistor is electrically connected to the second wiring,

wherein a first terminal of the third transistor is electrically connected to a gate of the third transistor, a second terminal of the third transistor is electrically connected to a gate of the first transistor, and the gate of the third transistor is electrically connected to a fourth wiring,

wherein a first terminal of the fourth transistor is electrically connected to the third wiring, a second terminal of the fourth transistor is electrically connected to the gate of the first transistor, and a gate of the fourth transistor is electrically connected to a gate of the second transistor,

wherein a first terminal of the fifth transistor is electrically connected to a fifth wiring, a second terminal of the fifth transistor is electrically connected to the gate of the second transistor, and a gate of the fifth transistor is electrically connected to the fifth wiring,

wherein a first terminal of the sixth transistor is electrically connected to the third wiring, a second terminal of the sixth transistor is electrically connected to the gate of the second transistor, and a gate of the sixth transistor is electrically connected to the fourth wiring,

wherein a channel width of the first transistor is larger than a channel width of the third transistor,

wherein a channel width of the first transistor is larger than a channel width of the fourth transistor,

wherein a channel width of the first transistor is larger than a channel width of the fifth transistor, and

wherein a channel width of the first transistor is larger than a channel width of the sixth transistor.

5. A semiconductor device comprising:

a first transistor;

a second transistor;

a third transistor;

a fourth transistor;

a fifth transistor; and

a sixth transistor,

wherein a first terminal of the first transistor is electrically connected to a first wiring, and a second terminal of the first transistor is electrically connected to a second wiring,

wherein a first terminal of the second transistor is electrically connected to a third wiring, and a second terminal of the second transistor is electrically connected to the second wiring,

wherein a first terminal of the third transistor is electrically connected to a gate of the third transistor, a second terminal of the third transistor is electrically connected to a gate of the first transistor, and the gate of the third transistor is electrically connected to a fourth wiring,

wherein a first terminal of the fourth transistor is electrically connected to the third wiring, a second terminal of the fourth transistor is electrically connected to the gate of the first transistor, and a gate of the fourth transistor is electrically connected to a gate of the second transistor,

wherein a first terminal of the fifth transistor is electrically connected to a fifth wiring, a second terminal of the fifth transistor is electrically connected to the gate of the second transistor, and a gate of the fifth transistor is electrically connected to the first wiring, and

wherein a first terminal of the sixth transistor is electrically connected to the third wiring, a second terminal of the sixth transistor is electrically connected to the gate of the second transistor, and a gate of the sixth transistor is electrically connected to the fourth wiring.

6. A semiconductor device comprising:

a capacitor;

a first transistor;

a second transistor;

a third transistor;

a fourth transistor;

a fifth transistor; and

a sixth transistor,

wherein a first terminal of the first transistor is electrically connected to a first wiring, and a second terminal of the first transistor is electrically connected to a second wiring,

wherein a first terminal of the second transistor is electrically connected to a third wiring, and a second terminal of the second transistor is electrically connected to the second wiring,

wherein a first terminal of the third transistor is electrically connected to the first wiring, a second terminal of the third transistor is electrically connected to a gate of the first transistor, and a gate of the third transistor is electrically connected to a fourth wiring,

wherein a first terminal of the fourth transistor is electrically connected to the third wiring, a second terminal of the fourth transistor is electrically connected to the gate of the first transistor, and a gate of the fourth transistor is electrically connected to a gate of the second transistor,

wherein a first terminal of the fifth transistor is electrically connected to a fifth wiring, a second terminal of the fifth transistor is electrically connected to the gate of the second transistor, and a gate of the fifth transistor is electrically connected to any one of the first wiring, the fifth wiring, and a sixth wiring, and

wherein a first terminal of the sixth transistor is electrically connected to the third wiring, a second terminal of the sixth transistor is electrically connected to the gate of the second transistor, and a gate of the sixth transistor is electrically connected to the fourth wiring,

wherein the capacitor is electrically connected to the gate of the second transistor and one of the first wiring, the fifth wiring, and the sixth wiring.

7. A semiconductor device comprising:

a capacitor;

a first transistor;

a second transistor;

a third transistor;

a fourth transistor;

a fifth transistor; and

a sixth transistor,

wherein a first terminal of the first transistor is electrically connected to a first wiring, and a second terminal of the first transistor is electrically connected to a second wiring,

wherein a first terminal of the second transistor is electrically connected to a third wiring, and a second terminal of the second transistor is electrically connected to the second wiring,

wherein a first terminal of the third transistor is electrically connected to a seventh wiring or a gate of the third transistor, a second terminal of the third transistor is electrically connected to a gate of the first transistor, and the gate of the third transistor is electrically connected to a fourth wiring,

wherein a first terminal of the fourth transistor is electrically connected to the third wiring, a second terminal of the fourth transistor is electrically connected to the gate of the first transistor, and a gate of the fourth transistor is electrically connected to a gate of the second transistor,

wherein a first terminal of the fifth transistor is electrically connected to a fifth wiring, a second terminal of the fifth transistor is electrically connected to the gate of the second transistor, and a gate of the fifth transistor is electrically connected to a sixth wiring, and

wherein a first terminal of the sixth transistor is electrically connected to the third wiring, a second terminal of the sixth transistor is electrically connected to the gate of the second transistor, and a gate of the sixth transistor is electrically connected to the fourth wiring,

wherein the capacitor is electrically connected to the gate of the second transistor and one of the first wiring, the fifth wiring, and the sixth wiring.

8. A semiconductor device comprising:

a capacitor;

a first transistor;

a second transistor;

a third transistor;

a fourth transistor;

a fifth transistor; and

a sixth transistor,

wherein a first terminal of the first transistor is electrically connected to a first wiring, and a second terminal of the first transistor is electrically connected to a second wiring,

wherein a first terminal of the second transistor is electrically connected to a third wiring, and a second terminal of the second transistor is electrically connected to the second wiring,

wherein a first terminal of the third transistor is electrically connected to a fourth wiring, a second terminal of the third transistor is electrically connected to a gate of the first transistor, and a gate of the third transistor is electrically connected to a fifth wiring,

wherein a first terminal of the fourth transistor is electrically connected to the third wiring, a second terminal of the fourth transistor is electrically connected to the gate of the first transistor, and a gate of the fourth transistor is electrically connected to a gate of the second transistor,

wherein a first terminal of the fifth transistor is electrically connected to the fifth wiring, a second terminal of the fifth transistor is electrically connected to the gate of the second transistor, and a gate of the fifth transistor is electrically connected to a sixth wiring, and

wherein a first terminal of the sixth transistor is electrically connected to the third wiring, a second terminal of the sixth transistor is electrically connected to the gate of the second transistor, and a gate of the sixth transistor is electrically connected to the fourth wiring,

wherein the capacitor is electrically connected to the gate of the second transistor and one of the first wiring, the fifth wiring, and the sixth wiring.

9. The semiconductor device according to claim 1 ,

wherein a first signal is input to the fourth wiring,

wherein a second signal is output from the second wiring, and

wherein an amplitude voltage of the second signal is higher than an amplitude voltage of the first signal.

10. The semiconductor device according to claim 9 ,

wherein the first signal is a digital signal,

wherein the second signal is a digital signal,

wherein the second signal is high when the first signal is high, and

wherein the second signal is low when the first signal is low.

11. The semiconductor device according to claim 2 ,

wherein a first signal is input to the fourth wiring,

wherein a second signal is output from the second wiring, and

wherein an amplitude voltage of the second signal is higher than an amplitude voltage of the first signal.

12. The semiconductor device according to claim 11 ,

wherein the first signal is a digital signal,

wherein the second signal is a digital signal,

wherein the second signal is high when the first signal is high, and

wherein the second signal is low when the first signal is low.

13. The semiconductor device according to claim 3 ,

wherein a first signal is input to the fourth wiring,

wherein a second signal is output from the second wiring, and

wherein an amplitude voltage of the second signal is higher than an amplitude voltage of the first signal.

14. The semiconductor device according to claim 13 ,

wherein the first signal is a digital signal,

wherein the second signal is a digital signal,

wherein the second signal is high when the first signal is high, and

wherein the second signal is low when the first signal is low.

15. The semiconductor device according to claim 4 ,

wherein a first signal is input to the fourth wiring,

wherein a second signal is output from the second wiring, and

wherein an amplitude voltage of the second signal is higher than an amplitude voltage of the first signal.

16. The semiconductor device according to claim 15 ,

wherein the first signal is a digital signal,

wherein the second signal is a digital signal,

wherein the second signal is high when the first signal is high, and

wherein the second signal is low when the first signal is low.

17. The semiconductor device according to claim 5 ,

wherein a first signal is input to the fourth wiring,

wherein a second signal is output from the second wiring, and

wherein an amplitude voltage of the second signal is higher than an amplitude voltage of the first signal.

18. The semiconductor device according to claim 17 ,

wherein the first signal is a digital signal,

wherein the second signal is a digital signal,

wherein the second signal is high when the first signal is high, and

wherein the second signal is low when the first signal is low.

19. The semiconductor device according to claim 6 ,

wherein a first signal is input to the fourth wiring,

wherein a second signal is output from the second wiring, and

wherein an amplitude voltage of the second signal is higher than an amplitude voltage of the first signal.

20. The semiconductor device according to claim 19 ,

wherein the first signal is a digital signal,

wherein the second signal is a digital signal,

wherein the second signal is high when the first signal is high, and

wherein the second signal is low when the first signal is low.

21. The semiconductor device according to claim 7 ,

wherein a first signal is input to the fourth wiring,

wherein a second signal is output from the second wiring, and

wherein an amplitude voltage of the second signal is higher than an amplitude voltage of the first signal.

22. The semiconductor device according to claim 21 ,

wherein the first signal is a digital signal,

wherein the second signal is a digital signal,

wherein the second signal is high when the first signal is high, and

wherein the second signal is low when the first signal is low.

23. The semiconductor device according to claim 8 ,

wherein a first signal is input to the fourth wiring,

wherein a second signal is output from the second wiring, and

wherein an amplitude voltage of the second signal is higher than an amplitude voltage of the first signal.

24. The semiconductor device according to claim 23 ,

wherein the first signal is a digital signal,

wherein the second signal is a digital signal,

wherein the second signal is high when the first signal is high, and

wherein the second signal is low when the first signal is low.

25. The semiconductor device according to claim 1 , wherein the fourth wiring is electrically connected to a shift register circuit.

26. The semiconductor device according to claim 2 , wherein the fourth wiring is electrically connected to a shift register circuit.

27. The semiconductor device according to claim 3 , wherein the fourth wiring is electrically connected to a shift register circuit.

28. The semiconductor device according to claim 4 , wherein the fourth wiring is electrically connected to a shift register circuit.

29. The semiconductor device according to claim 5 , wherein the fourth wiring is electrically connected to a shift register circuit.

30. The semiconductor device according to claim 6 , wherein the fourth wiring is electrically connected to a shift register circuit.

31. The semiconductor device according to claim 7 , wherein the fourth wiring is electrically connected to a shift register circuit.

32. The semiconductor device according to claim 8 , wherein the fourth wiring is electrically connected to a shift register circuit.

33. The semiconductor device according to claim 1 , wherein the first to sixth transistors are transistors comprising an oxide semiconductor.

34. The semiconductor device according to claim 2 , wherein the first to sixth transistors are transistors comprising an oxide semiconductor.

35. The semiconductor device according to claim 3 , wherein the first to sixth transistors are transistors comprising an oxide semiconductor.

36. The semiconductor device according to claim 4 , wherein the first to sixth transistors are transistors comprising an oxide semiconductor.

37. The semiconductor device according to claim 5 , wherein the first to sixth transistors are transistors comprising an oxide semiconductor.

38. The semiconductor device according to claim 6 , wherein the first to sixth transistors are transistors comprising an oxide semiconductor.

39. The semiconductor device according to claim 7 , wherein the first to sixth transistors are transistors comprising an oxide semiconductor.

40. The semiconductor device according to claim 8 , wherein the first to sixth transistors are transistors comprising an oxide semiconductor.

41. The semiconductor device according to claim 1 , wherein the first to sixth transistors are transistors comprising a material selected from the group consisting of InGaZnO, SiGe, GaAs, IZO, ITO, SnO, TiO, and AlZnSnO.

42. The semiconductor device according to claim 2 , wherein the first to sixth transistors are transistors comprising a material selected from the group consisting of InGaZnO, SiGe, GaAs, IZO, ITO, SnO, TiO, and AlZnSnO.

43. The semiconductor device according to claim 3 , wherein the first to sixth transistors are transistors comprising a material selected from the group consisting of InGaZnO, SiGe, GaAs, IZO, ITO, SnO, TiO, and AlZnSnO.

44. The semiconductor device according to claim 4 , wherein the first to sixth transistors are transistors comprising a material selected from the group consisting of InGaZnO, SiGe, GaAs, IZO, ITO, SnO, TiO, and AlZnSnO.

45. The semiconductor device according to claim 5 , wherein the first to sixth transistors are transistors comprising a material selected from the group consisting of InGaZnO, SiGe, GaAs, IZO, ITO, SnO, TiO, and AlZnSnO.

46. The semiconductor device according to claim 6 , wherein the first to sixth transistors are transistors comprising a material selected from the group consisting of InGaZnO, SiGe, GaAs, IZO, ITO, SnO, TiO, and AlZnSnO.

47. The semiconductor device according to claim 7 , wherein the first to sixth transistors are transistors comprising a material selected from the group consisting of InGaZnO, SiGe, GaAs, IZO, ITO, SnO, TiO, and AlZnSnO.

48. The semiconductor device according to claim 8 , wherein the first to sixth transistors are transistors comprising a material selected from the group consisting of InGaZnO, SiGe, GaAs, IZO, ITO, SnO, TiO, and AlZnSnO.

49. An electronic appliance comprising the semiconductor device according to claim 1 .

50. An electronic appliance comprising the semiconductor device according to claim 2 .

51. An electronic appliance comprising the semiconductor device according to claim 3 .

52. An electronic appliance comprising the semiconductor device according to claim 4 .

53. An electronic appliance comprising the semiconductor device according to claim 5 .

54. An electronic appliance comprising the semiconductor device according to claim 6 .

55. An electronic appliance comprising the semiconductor device according to claim 7 .

56. An electronic appliance comprising the semiconductor device according to claim 8 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 6, 2015
From: KOYAMA, JUN; UMEZAKI, ATSUSHI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 034645/0863 →
Priority Claims (1)
JP 2009-214848 · Sep 16, 2009 · national
Continuity (4)
Continuation 14147647 · Jan 6, 2014
Continuation 13921401 · Jun 19, 2013
Continuation 12879610 · Sep 10, 2010
Related Publication 20150041807A1 · Feb 12, 2015