Methods of forming through substrate interconnects
A method of forming a through substrate interconnect includes forming a via into a semiconductor substrate. The via extends into semiconductive material of the substrate. A liquid dielectric is applied to line at least an elevationally outermost portion of sidewalls of the via relative a side of the substrate from which the via was initially formed. The liquid dielectric is solidified within the via. Conductive material is formed within the via over the solidified dielectric and a through substrate interconnect is formed with the conductive material.
1. A method of forming a through substrate interconnect sequentially comprising:
forming a via into semiconductive material of a semiconductor substrate comprising first and second major sides, the via being formed from the first major side to a conductive bondpad which is more proximate to the second major side than the first major side, the conductive bondpad being exposed along an outermost surface of the second major side;
applying a liquid dielectric over sidewalls of the via, over a base surface of the via comprising the conductive bondpad and over an elevationally outermost surface of the first major side, the applying being conducted in multiple separate applications of liquid dielectric;
solidifying the liquid dielectric within the via and over the elevationally outermost surface of the first major side;
removing all of the solidified dielectric from being over the elevationally outermost surface of the first major side and from over the base surface, the removing comprising anisotropic etching of the solidified dielectric material; and
forming conductive material within the via over the solidified dielectric and forming a through substrate interconnect with the conductive material.
2. The method of claim 1 wherein the forming of the via stops on a back-side of the conductive bondpad.
3. The method of claim 1 wherein the first major side is a back-side of the substrate, and the second major side is a front-side of the substrate.
4. The method of claim 1 wherein the first major side is a front-side of the substrate, and the second major side is a back-side of the substrate.
5. The method of claim 1 wherein the applying is of spin-on liquid dielectric in a spin-on manner.
6. The method of claim 1 wherein the applying lines all sidewalls of the via with liquid dielectric.
7. The method of claim 1 wherein the applying completely covers a base of the via with liquid dielectric.
8. The method of claim 1 wherein the applying lines all sidewalls of the via with liquid dielectric, and completely covers a base of the via with liquid dielectric.
9. The method of claim 1 comprising vapor depositing a dielectric material to line at least an elevationally outermost portion of the sidewalls of the via before applying the liquid dielectric.
10. The method of claim 9 comprising recessing the dielectric material within the via before applying the liquid dielectric.
11. A method of forming a through substrate interconnect sequentially comprising:
forming a via into semiconductive material of a semiconductor substrate comprising first and second major sides, the via being formed from the first major side to a conductive bondpad which is more proximate to the second major side than the first major side, the conductive bondpad being exposed along an outermost surface of the second major side;
applying a liquid dielectric to line at least an elevationally outermost portion of sidewalls of the via relative the first major side, the applying being conducted in multiple separate applications of liquid dielectric;
solidifying the liquid dielectric within the via; and
forming conductive material within the via over and directly against the solidified dielectric and forming a through substrate interconnect with the conductive material, the conductive material comprising one or more members of the group consisting of doped semiconductive materials, metal alloys and metal compounds.
12. A method of forming a through substrate interconnect sequentially comprising:
forming a via into semiconductive material of a semiconductor substrate comprising first and second major sides, the via being formed from the first major side to a conductive bondpad which is more proximate to the second major side than the first major side, the via being formed to extend into the conductive bondpad, the conductive bondpad being exposed along an outermost surface of the second major side;
applying a liquid dielectric to line at least an elevationally outermost portion of sidewalls of the via relative the first major side, the applying being conducted in multiple separate applications of liquid dielectric;
solidifying the liquid dielectric within the via;
anisotropically etching the solidified dielectric material; and
forming conductive material within the via over the solidified dielectric and forming a through substrate interconnect with the conductive material.
13. The method of claim 12 comprising forming the via to extend only partially into the conductive bondpad.
14. The method of claim 12 comprising forming the via to extend completely through the conductive bondpad.