Method of reducing residual contamination in singulated semiconductor die

1. A method for processing semiconductor die comprising:

providing a semiconductor wafer having a plurality of semiconductor die formed on the semiconductor wafer and separated from each other by spaces, wherein the semiconductor wafer has first and second opposing major surfaces, and wherein a conductive layer is affixed adjoining the second major surface;

placing the semiconductor wafer onto a first carrier substrate;

plasma etching the semiconductor wafer through the spaces to form singulation lines adjacent the plurality of semiconductor die, wherein the plasma etching step stops proximate to the conductive layer in the singulation lines;

using a water miscible solvent to reduce the presence of residual contaminants resulting from the plasma etching step from surfaces of the plurality of semiconductor die; and

removing the conductive layer in the singulation lines using a first fluid ablation process.

2. The method of claim 1 , wherein using the water miscible solvent comprises dispensing the water miscible solvent with a spray solvent apparatus.

3. The method of claim 2 , wherein using the water miscible solvent comprises using a heated water miscible solvent.

4. The method of claim 1 , wherein using the water miscible solvent comprises using one or more of acetone, acetonitrile, methanol, and 2-propanol.

5. The method of claim 1 , wherein removing the conductive layer from the singulation lines occurs after using the water miscible solvent.

6. The method of claim 1 , wherein removing the conductive layer comprises:

removing first portions of the conductive layer using the first fluid ablation process while the conductive layer is attached to the first carrier substrate;

attaching a second carrier substrate to the first major surface of the semiconductor wafer;

removing the first carrier substrate; and

removing second portions of the conductive layer using a second fluid ablation process.

7. The method of claim 6 further comprising:

attaching a third carrier substrate onto the second major surface after removing the second portions; and

removing the second carrier substrate.

8. The method of claim 7 , wherein using the water miscible solvent occurs before removing the second carrier substrate.

9. The method of claim 1 , wherein removing the conductive layer comprises:

attaching a second carrier substrate to the first major surface of the semiconductor wafer;

removing the first carrier substrate; and

removing the conductive layer from the singulation lines using the first fluid ablation process.

10. The method of claim 9 , wherein using the water miscible solvent occurs before removing the conductive layer.

11. The method of claim 1 , wherein placing the semiconductor wafer onto the first carrier substrate comprises placing the semiconductor wafer onto a carrier tape.

12. The method of claim 1 , wherein:

using the water miscible solvent comprises using a heated water miscible solvent; and

placing the semiconductor wafer onto the first carrier substrate comprises affixing the first carrier substrate to the conductive layer.

13. The method of claim 1 , further comprising stretching the first carrier substrate for at least some period of time while removing the conductive layer.

14. A method of singulating a substrate comprising:

providing a substrate having a plurality of die formed on the substrate and separated from each other by spaces, wherein the substrate has first and second opposing major surfaces, and wherein a conductive layer is formed overlying the second major surface;

providing a first carrier tape attached to a frame;

affixing the first carrier tape to the conductive layer;

plasma etching the substrate through the spaces to form singulation lines, wherein the singulation lines terminate in proximity to the conductive layer;

removing the conductive layer from the singulation lines using a first fluid ablation process; and

using a water miscible solvent to remove at least portions of residual material resulting from the plasma etching step from surfaces of the plurality of die.

15. The method of claim 14 , wherein:

using the water miscible solvent occurs before removing the conductive layer and occurs while the first carrier tape is attached to the frame;

using the water miscible solvent comprises using a heated water miscible solvent; and

using the water miscible solvent comprises using a spray solvent apparatus to provide the water miscible solvent.

16. The method of claim 14 , wherein removing the conductive layer comprises:

removing first portions of the conductive layer using the first fluid ablation process while the conductive layer is attached to the first carrier tape;

attaching a second carrier tape to the first major surface of the semiconductor wafer;

removing the first carrier tape;

removing second portions of the conductive layer using a second fluid ablation process;

attaching a third carrier tape onto the second major surface after removing the second portions; and

removing the second carrier tape, and

wherein using the water miscible solvent occurs after removing the second portions of the conductive layer.

17. A method of singulating semiconductor die from a semiconductor wafer comprising:

providing the semiconductor wafer having a plurality of semiconductor die formed as part of the semiconductor wafer and separated from each other by spaces defining where singulation lines will be formed, wherein the semiconductor wafer has first and second opposing major surfaces, and wherein a conductive layer is formed overlying the second major surface;

placing a first carrier substrate onto the conductive layer;

plasma etching the semiconductor wafer through the spaces to form the singulation lines while the semiconductor wafer is attached to the first carrier substrate and using the conductive layer as a stop layer;

thereafter physically removing the conductive layer from the singulation lines; and

using a water miscible solvent to reduce the presence of residual contaminants resulting from the plasma etching step from surfaces of the plurality of semiconductor die.

18. The method of claim 17 , wherein physically removing the conductive layer comprises:

attaching a second carrier substrate to the first major surface of the semiconductor wafer;

removing the first carrier substrate; and

removing the conductive layer from the singulation lines using a first fluid ablation process.

19. The method of claim 17 , wherein physically removing the conductive layer comprises:

removing first portions of the conductive layer using a first fluid ablation process while the conductive layer is attached to the first carrier substrate;

attaching a second carrier substrate to the first major surface of the semiconductor wafer;

removing the first carrier substrate; and

removing second portions of the conductive layer using a second fluid ablation process;

attaching a third carrier substrate onto the second major surface after removing the second portions; and

removing the second carrier substrate.

20. The method of claim 17 , wherein using the water miscible solvent comprises:

performing the step of using the water miscible solvent before the step of removing the conductive layer;

using a heated water miscible solvent; and

using a spray solvent apparatus to provide the heated water miscible solvent.