Micro-electromechanical semiconductor component
The micro-electromechanical semiconductor component is provided with a semiconductor substrate ( 4, 5 ), a reversibly deformable bending element ( 8 a ) made of semiconductor material, and at least one transistor that is sensitive to mechanical stresses, said transistor being designed as an integrated component in the bending element ( 8 a ). The transistor is arranged in an implanted active region pan ( 78 a ) that is made of a semiconductor material of a first conducting type and is introduced in the bending element ( 8 a ). Two mutually spaced, implanted drain and source regions ( 79, 80 ) made of a semiconductor material of a second conducting type are designed in the active region pan ( 78 a ), a channel region extending between said two regions. Implanted feed lines made of a semiconductor material of the second conducting type lead to the drain and source regions ( 79, 80 ). The upper face of the active region pan ( 78 a ) is covered by a gate oxide ( 81 a ). In the area of the channel region, a gate electrode ( 81 ) made of polysilicon is located on the gate oxide ( 81 a ), a feed line likewise made of polysilicon leading to said gate electrode.
1. A micro-electromechanical semiconductor component comprising:
a semiconductor substrate;
a reversibly deformable bending element made of semiconductor material; and
at least one transistor being sensitive to mechanical stresses;
wherein the transistor is designed as an integrated component in the bending element,
wherein the transistor is arranged in an implanted active region well which is made of a semiconductor material of a first conducting type and is formed in the bending element,
wherein a mutually spaced, implanted drain region and a mutually spaced, implanted source region are made of a semiconductor material of a second conducting type are formed in the active region well, a channel region extending between the drain region and the source region,
wherein implanted feed lines made of a semiconductor material of the second conducting type lead to the drain region and the source region,
wherein an upper face of the active region well and the remainder of the bending element is covered by a gate oxide,
wherein a gate electrode made of polysilicon is located on the gate oxide in the area of the channel region, a feed line likewise made of polysilicon leading to the gate electrode, and
wherein a field oxide is arranged on the semiconductor substrate outside of the bending element.
2. The micro-electromechanical semiconductor component according to claim 1 , wherein the first conductive type is an n-conductive type and the second conductive type is a p-conductive type.
3. The micro-electromechanical semiconductor component of claim 1 , wherein the active region lacks a field oxide.
4. The micro-electromechanical semiconductor component of claim 1 , wherein the implanted feed lines extend to one or more sites outside of the bending element.
5. The micro-electromechanical semiconductor component of claim 1 , wherein the semi-conductor substrate includes a plurality of trenches, wherein the active region well is arranged between at least two of the plurality of trenches.