Semiconductor device and method for manufacturing the same

1. A method for manufacturing a semiconductor device, the method comprising the steps of:

attaching a semiconductor wafer comprising semiconductor device portions to a supporting sheet with an adhesive layer interposed therebetween; and

performing marking on a main surface of the semiconductor wafer by causing a laser to pass through the supporting sheet and the adhesive layer and to be applied on the main surface;

wherein in the step of performing marking,

a plurality of recesses are provided that are separated from each other and made by locally indenting the main surface of the semiconductor substrate through shot irradiation of the laser, and

each of the plurality of recesses is provided with a carbonized region in which the adhesive layer is carbonized on the recess and a peripheral portion of the recess, and

one of the carbonized regions adjacent to each other and another one of the carbonized regions adjacent to each other partially overlap each other.

2. The method for manufacturing a semiconductor device according to claim 1 , wherein the carbonized region is formed by a carbide made by carbonization by the application of the laser.

3. The method for manufacturing a semiconductor device according to claim 1 ,

wherein

attaching the semiconductor wafer includes providing the supporting sheet having a peripheral portion supported by a supporting structure; and

performing the marking comprises providing a marking on a plurality of semiconductor device portions included in the semiconductor wafer.

4. The method for manufacturing a semiconductor device according to claim 1 , wherein a position of an alignment mark on the semiconductor wafer is recognized to align a position of an irradiator that irradiates the laser with a position of each of the semiconductor device portions included in the semiconductor wafer.

5. The method for manufacturing a semiconductor device according to claim 1 , wherein the supporting sheet comprises a dicing sheet.

6. The method for manufacturing a semiconductor device according to claim 1 further comprising the step of

removing charge of the semiconductor wafer using an ionizer before the step of performing the marking.

7. A method for manufacturing a semiconductor device, the method comprising the steps of:

preparing a semiconductor wafer including a first main surface and a second main surface that are opposite surfaces, as well as semiconductor device portions that are arranged in a matrix and include wirings formed on a side of the first main surface;

separating the semiconductor wafer along border lines between the semiconductor device portions;

attaching the second main surface of the semiconductor wafer to a supporting sheet via an adhesive layer, the second main surface of the semiconductor wafer being a main surface of a semiconductor substrate of each of the semiconductor device portions; and

performing marking on the semiconductor substrate of each semiconductor device portion by applying a laser thereon, wherein

in the step of performing marking, the laser is caused to pass through the supporting sheet and the adhesive layer and to be applied on the semiconductor substrate and a carbide is attached to a region in which the marking is provided;

wherein in the step of performing marking,

a plurality of recesses are provided that are separated from each other and made by locally indenting the main surface of the semiconductor substrate through shot irradiation of the laser, and

each of the plurality of recesses is provided with a carbonized region in which the adhesive layer is carbonized on the recess and a peripheral portion of the recess, and

one of the carbonized regions adjacent to each other and another one of the carbonized regions adjacent to each other partially overlap each other.

8. The method for manufacturing a semiconductor device according to claim 7 , wherein the laser has a wavelength of 532 nm.

9. The method for manufacturing a semiconductor device according to claim 7 , wherein the supporting sheet is a dicing sheet whose peripheral portion is supported by a support structure.

10. The method for manufacturing a semiconductor device according to claim 7 , wherein separating the semiconductor wafer includes separating from the side of the first main surface along border lines between the semiconductor device portions; to form grooves each having a depth smaller than a thickness of the semiconductor wafer, and wherein the method further comprises separating the semiconductor device portions at portions at which the grooves are formed by removing material from the semiconductor wafer from a side of the second main surface.

11. The method for manufacturing a semiconductor device according to claim 7 , wherein:

in the step of performing marking, the laser is caused to pass through the supporting sheet and the adhesive layer and applied on each semiconductor device portion, and the carbide is made by carbonizing the adhesive layer using heat generated by the laser.

12. The method for manufacturing a semiconductor device according to claim 1 , wherein the step of performing marking including forming a marking structure on the main surface comprising:

a plurality of recesses extending generally inward from the main surface, wherein each recess is separated by portions of the main surface; and

a carbide layer lining the plurality of recesses and overlapping the portions of the second main surface as a continuous layer, wherein the carbide layer comprises a plurality of carbonized regions, and wherein one of the carbonized regions adjacent to another one of the carbonized regions partially overlap each other.

13. A method for forming a semiconductor device comprising:

providing a semiconductor wafer having a plurality of semiconductor device portions and having a major surface attached to a supporting sheet; and

applying a laser through the supporting sheet onto the major surface of the semiconductor wafer to form a marking structure on the major surface, wherein applying laser through the supporting sheet provides a material attached to the major surface configured to enhance visibility of the marking structure;

wherein applying the laser provides a carbide resin material attached to the major surface;

wherein applying the laser provides a marking structure comprising:

a plurality of recesses extending generally inward from the main surface, wherein each recess is separated by portions of the main surface; and the material lining the plurality of recesses and overlapping the portions of the second main surface as a continuous layer, wherein the material comprises a plurality of carbonized regions, and wherein one of the carbonized regions adjacent to another one of the carbonized regions partially overlap each other.

14. The method of claim 13 , wherein providing the semiconductor wafer including providing a supporting sheet having an adhesive layer interposed between the major surface and the supporting sheet.

15. The method of claim 13 wherein applying the laser provides marking structures on a plurality of the semiconductor device portions.

16. The method of claim 13 further comprising separating the semiconductor wafer into the semiconductor device portions.

17. The method of claim 13 , wherein applying the laser provides a marking structure comprising at least one of a position mark and a sign mark.