Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus and computer-readable recording medium
A method of manufacturing a semiconductor device, includes: alternately performing (i) a first step of alternately supplying a first raw material containing a first metal element and a halogen element and a second raw material containing a second metal element and carbon to a substrate by a first predetermined number of times, and (ii) a second step of supplying a nitridation raw material to the substrate, by a second predetermined number of times, wherein alternating the first and second steps forms a metal carbonitride film containing the first metal element having a predetermined thickness on the substrate.
1. A method of manufacturing a semiconductor device, comprising forming a film containing a first metal element and carbon on a substrate by alternately performing one or more times:
(a) supplying a first raw material containing the first metal element and a halogen element to the substrate to form a first layer containing the first metal element and the halogen element; and
(b) supplying a second raw material, containing a second metal element and the carbon, to the substrate causing the halogen element contained in the first layer to react with the second metal element contained in the second raw material to be transformed into a gaseous material; and
(c) discharging the gaseous material,
wherein at least one of the first metal element and the second metal element is a transition metal element, thereby forming a second layer containing the first metal element and the carbon,
wherein the first metal element is a transition metal element, and
wherein the second raw material contains a methyl group.
2. The method of claim 1 , wherein the first metal element includes at least one element selected from a group consisting of titanium, tantalum, hafnium, zirconium, molybdenum and tungsten.
3. The method of claim 1 , wherein the second metal element is a transition metal element.
4. The method of claim 1 , wherein the second metal element includes at least one element selected from a group consisting of titanium, tantalum, hafnium, zirconium, molybdenum, tungsten and aluminum.
5. The method of claim 1 , wherein the second metal element is a transition metal element.
6. The method of claim 1 , wherein the second raw material contains a cyclopentadienyl group.
7. The method of claim 1 , wherein the second raw material further contains a cyclopentadienyl group.
8. The method of claim 1 , wherein the second raw material contains an ethyl group.
9. The method of claim 1 , wherein the first raw material includes at least one raw material selected from a group consisting of TiCl 4 , TiF 4 , TaCl 5 , TaF 5 , HfCl 4 , HfF 4 , ZrCl 4 , ZrF 4 , MoCl 5 , MoF 5 , WCl 6 and WF 6 , and
wherein the second raw material includes at least one raw material selected from a group consisting of Hf[C 5 H 4 (CH 3 )] 2 (CH 3 ) 2 , Zr[C 5 H 4 (CH 3 )] 2 (CH 3 ) 2 , Hf[N(C 2 H 5 )(CH 3 )] 4 , Zr[N(C 2 H 5 )(CH 3 )] 4 , Hf[N(CH 3 ) 2 ] 4 , Ti[N(CH 3 ) 2 ] 4 and Al(CH 3 ) 3 .
10. The method of claim 1 , wherein (b) further comprises bonding the first metal element contained in the first layer and the carbon contained in the second raw material.
11. The method of claim 1 , wherein (b) further comprises transforming the halogen element contained in the first layer and the second metal element contained in the second raw material into at least one of a gaseous material containing the halogen element and a gaseous material containing the second metal element, and a gaseous material containing the halogen element and the second metal element, and (c) further comprises discharging the at least one gaseous material.
12. The method of claim 1 , wherein (b) further comprises producing, from the halogen element contained in the first layer and the second metal element contained in the second raw material, at least one of a gaseous material containing the halogen element and a gaseous material containing the second metal element, and a gaseous material containing the halogen element and the second metal element and (c) further comprises discharging the at least one gaseous material as a form of gas.
13. A substrate processing apparatus comprising:
a process chamber configured to accommodate a substrate;
a first raw material supply system configured to supply a first raw material containing a first metal element and a halogen element to the substrate in the process chamber;
a second raw material supply system configured to supply a second raw material containing a second metal element and carbon to the substrate in the process chamber; and
a control unit configured to control the first raw material supply system and the second raw material supply system so as to form a film containing the first metal element and the carbon on the substrate by alternately performing one or more times:
(a) supplying the first raw material containing the first metal element and the halogen element to the substrate to form a first layer containing the first metal element and the halogen element; and
(b) supplying the second raw material, containing the second metal element and the carbon, to the substrate causing the halogen element contained in the first layer to react with the second metal element contained in the second raw material to be transformed into a gaseous material; and
(c) discharging the gaseous material,
wherein at least one of the first metal element and the second metal element is a transition metal element, thereby forming a second layer containing the first metal element and the carbon,
wherein the first metal element is a transition metal element, and
wherein the second raw material contains a methyl group.
14. A non-transitory computer-readable recording medium storing a program that causes a computer to perform a process comprising forming a film containing a first metal element and carbon on a substrate by alternately performing one or more times:
(a) supplying a first raw material containing the first metal element and a halogen element to the substrate to form a first layer containing the first metal element and the halogen element; and
(b) supplying the second raw material, containing the second metal element and the carbon, to the substrate causing the halogen element contained in the first layer to react with the second metal element contained in the second raw material to be transformed into a gaseous material; and
(c) discharging the gaseous material,
wherein at least one of the first metal element and the second metal element is a transition metal element, thereby forming a second layer containing the first metal element and the carbon,
wherein the first metal element is a transition metal element, and
wherein the second raw material contains a methyl group.