Via leakage and breakdown testing
Various particular embodiments include a via testing structure, including: a first terminal coupled to a first set of sensing lines in a top level of the structure; a second terminal coupled to a second set of sensing lines in the top level of the structure, wherein first set of sensing lines and the second set of sensing lines are disposed in a comb arrangement; a third terminal coupled to a third set of sensing lines in a bottom level of the structure; and a plurality of vias electrically coupling the second set of sensing lines in the top level of the structure to the third set of sensing lines in the bottom level of the structure, each via having a via top and a via bottom.
1. A testing structure, comprising:
a first three terminal via testing structure, including:
a first terminal coupled to a first set of sensing lines in a top level of the structure;
a second terminal coupled to a second set of sensing lines in the top level of the structure, wherein first set of sensing lines and the second set of sensing lines are disposed in a comb arrangement;
a third terminal coupled to a third set of sensing lines in a bottom level of the structure; and
a plurality of vias electrically coupling the second set of sensing lines in the top level of the structure to the third set of sensing lines in the bottom level of the structure, each via having a via top and a via bottom.
2. The testing structure of claim 1 , further comprising:
a voltage bias applied between the first terminal and the second terminal to isolate and obtain via top measurement data.
3. The testing structure of claim 1 , further comprising:
a voltage bias applied between the second terminal and the third terminal to isolate and obtain via bottom measurement data.
4. The testing structure of claim 1 , further comprising:
a second three terminal via testing structure, including:
a first terminal coupled to a first set of sensing lines in a top level of the second three terminal via testing structure;
a second terminal coupled to a second set of sensing lines in the top level of the second three terminal via testing structure, wherein first set of sensing lines and the second set of sensing lines are disposed in a comb arrangement; and
a third terminal coupled to a third set of sensing lines in a bottom level of the second three terminal via testing structure.
5. The testing structure of claim 4 , wherein the first and third terminals of the first three terminal via testing structure are tied together, and wherein the first and third terminals of the second three terminal via testing structure are tied together, further comprising:
a voltage bias applied between the first terminal and the second terminal of the first three terminal via testing structure, and a voltage bias applied between the first terminal and the second terminal of the second three terminal via testing structure.
6. The testing structure of claim 1 , further comprising:
a plurality of the first three terminal via testing structures wherein, in each of the plurality of the first three terminal via testing structures, the vias are shifted a different distance along at least one axis.
7. The testing structure of claim 1 , wherein the testing structure is located in a kerf area of a semiconductor wafer.
8. A semiconductor wafer, comprising:
a first three terminal via testing structure, including:
a first terminal coupled to a first set of sensing lines in a top level of the structure;
a second terminal coupled to a second set of sensing lines in the top level of the structure, wherein first set of sensing lines and the second set of sensing lines are disposed in a comb arrangement;
a third terminal coupled to a third set of sensing lines in a bottom level of the structure; and
a plurality of vias electrically coupling the second set of sensing lines in the top level of the structure to the third set of sensing lines in the bottom level of the structure, each via having a via top and a via bottom.
9. The semiconductor wafer of claim 8 , further comprising:
a voltage bias applied between the first terminal and the second terminal to isolate and obtain via top measurement data.
10. The semiconductor wafer of claim 8 , further comprising:
a voltage bias applied between the second terminal and the third terminal to isolate and obtain via bottom measurement data.
11. The semiconductor wafer of claim 8 , further comprising:
a second three terminal via testing structure, including:
a first terminal coupled to a first set of sensing lines in a top level of the second three terminal via testing structure;
a second terminal coupled to a second set of sensing lines in the top level of the second three terminal via testing structure, wherein first set of sensing lines and the second set of sensing lines are disposed in a comb arrangement; and
a third terminal coupled to a third set of sensing lines in a bottom level of the second three terminal via testing structure.
12. The semiconductor wafer of claim 11 , wherein the first and third terminals of the first three terminal via testing structure are tied together, and wherein the first and third terminals of the second three terminal via testing structure are tied together, further comprising:
a voltage bias applied between the first terminal and the second terminal of the first three terminal via testing structure, and a voltage bias applied between the first terminal and the second terminal of the second three terminal via testing structure.
13. The semiconductor wafer of claim 8 , further comprising:
a plurality of the first three terminal via testing structures wherein, in each of the plurality of the first three terminal via testing structures, the vias are shifted a different distance along at least one axis.
14. The semiconductor wafer of claim 8 , wherein the testing structure is located in a kerf area of the semiconductor wafer.
15. A testing method, comprising:
providing a three terminal via testing structure including at least one via, the three terminal via testing structure including:
a first terminal coupled to a first set of sensing lines in a top level of the structure;
a second terminal coupled to a second set of sensing lines in the top level of the structure, wherein first set of sensing lines and the second set of sensing lines are disposed in a comb arrangement;
a third terminal coupled to a third set of sensing lines in a bottom level of the structure; and
the at least one via electrically coupling at least one sensing line in the second set of sensing lines in the top level of the structure to at least one line in the third set of sensing lines in the bottom level of the structure, each via having a via top and a via bottom;
and
isolating and obtaining via top measurement data at a top of the via and via bottom data at the bottom of the via using the three terminal via testing structure.
16. The testing method of claim 15 , wherein the measurement data comprises voltage breakdown data.
17. The testing method of claim 15 , further comprising:
applying a voltage bias between the first terminal and the second terminal to isolate and obtain the via top measurement data.
18. The testing method of claim 15 , further comprising:
applying a voltage bias applied between the second terminal and the third terminal to isolate and obtain the via bottom measurement data.