Method of manufacturing semiconductor device, semiconductor device and substrate processing apparatus
An oxide film capable of suppressing reflection of a lens is formed under a low temperature. A method of manufacturing a semiconductor device includes forming a metal-containing oxide film on a substrate by performing a cycle a predetermined number of times, the cycle comprising: (a) supplying a metal-containing source to the substrate; (b) supplying an oxidizing source to the substrate; and (c) supplying a catalyst to the substrate.
1. A method of manufacturing a semiconductor device, comprising forming a laminated film wherein a silicon-containing oxide film and a metal-containing oxide film are alternately stacked on a substrate by alternately performing, a predetermined number of times,
(a) performing a first cycle a predetermined number of times, the first cycle comprising: supplying a silicon-containing source to the substrate; supplying an oxidizing source to the substrate; and supplying a catalyst to the substrate, or the first cycle comprising: supplying a silicon-containing source to the substrate; and supplying an oxidizing source in a plasma state to the substrate, to form the silicon-containing oxide film; and
(b) performing a second cycle a predetermined number of times, the second cycle comprising: supplying a metal-containing source to the substrate; supplying an oxidizing source to the substrate; and supplying a catalyst to the substrate, or the second cycle comprising: supplying a metal-containing source to the substrate; and supplying an oxidizing source in a plasma state to the substrate, to form the metal-containing oxide film.
2. The method according to claim 1 , wherein the (a) and the (b) are alternately performed in forming the laminated film to gradually decrease a stacking ratio of the metal-containing oxide film with respect to the silicon-containing oxide film.
3. The method according to claim 1 , wherein the silicon-containing source comprises at least one selected from a group consisting of chloride, fluoride, bromide, and iodide.
4. The method according to claim 1 , wherein the silicon-containing source comprises at least one selected from a group consisting of hexachlorodisilane, dichlorosilane, trichlorosilane, tetrachlorosilane, and octachlorotrisilane.
5. The method according to claim 1 , wherein the metal-containing source comprises at least one selected from a group consisting of chloride, fluoride, bromide, and iodide.
6. The method according to claim 1 , wherein the metal comprises at least one selected from a group consisting of titanium, hafnium, and zirconium.
7. The method according to claim 1 , wherein the oxidizing source comprises at least one selected from a group consisting of H 2 O, H 2 O 2 , a mixed gas of H 2 and O 3 and a mixed gas of H 2 and O 2 .
8. The method according to claim 1 , wherein the catalyst comprises at least one selected from a group consisting of ammonia, pyridine, trimethylamine, methylamine, triethylamine, aminopyridine, picoline, piperazine and lutidine.
9. A method of manufacturing a semiconductor device, comprising:
(a) forming a laminated film wherein a silicon-containing oxide film and a metal-containing oxide film are alternately stacked on a substrate by alternately performing, a predetermined number of times, (a-1) performing a first cycle a predetermined number of times, the first cycle comprising: supplying a silicon-containing source to the substrate; supplying an oxidizing source to the substrate; and supplying a catalyst to the substrate, or the first cycle comprising: supplying a silicon-containing source to the substrate; and supplying an oxidizing source in a plasma state to the substrate, to form the silicon-containing oxide film; and (a-2) performing a second cycle a predetermined number of times, the second cycle comprising: supplying a metal-containing source to the substrate; supplying an oxidizing source to the substrate; and supplying a catalyst to the substrate, or the second cycle comprising: supplying a metal-containing source to the substrate; and supplying an oxidizing source in a plasma state to the substrate, to form the metal-containing oxide film; and
(b) forming a silicon-containing oxide film on the laminated film by performing a third cycle a predetermined number of times, the third cycle comprising: supplying a silicon-containing source to the substrate; supplying an oxidizing source to the substrate; and supplying a catalyst to the substrate, or the third cycle comprising: supplying a silicon-containing source to the substrate; and supplying an oxidizing source in a plasma state to the substrate.
10. A substrate processing apparatus including:
a process chamber configured to accommodate a substrate;
a silicon-containing source supply part configured to supply a silicon-containing source into the process chamber;
a metal-containing source supply part configured to supply a metal-containing source into the process chamber;
an oxidizing source supply part configured to supply an oxidizing source into the process chamber;
a catalyst supply part configured to supply a catalyst into the process chamber or a plasma generating mechanism configured to generate plasma and obtain an oxidizing source in a plasma state; and
a control unit configured to control the silicon-containing source supply part, the metal-containing source supply part, the oxidizing source supply part, and catalyst supply part or the plasma generating mechanism to form a laminated film wherein a silicon-containing oxide film and a metal-containing oxide film are alternately stacked on the substrate by alternately performing, a predetermined number of times,
(a) performing a first cycle a predetermined number of times, the first cycle comprising: supplying the silicon-containing source to the substrate; supplying the oxidizing source to the substrate; and supplying the catalyst to the substrate, or the first cycle comprising: supplying the silicon-containing source to the substrate; and supplying the oxidizing source in a plasma state to the substrate, to form the silicon-containing oxide film; and
(b) performing a second cycle a predetermined number of times, the second cycle comprising: supplying the metal-containing source to the substrate; supplying the oxidizing source to the substrate; and supplying the catalyst to the substrate, or the second cycle comprising: supplying the metal-containing source to the substrate; and supplying the oxidizing source in a plasma state to the substrate, to form the metal-containing oxide film.