Semiconductor device and method of self-confinement of conductive bump material during reflow without solder mask
View Patent ↗A semiconductor device has a semiconductor die with a die bump pad. A substrate has a conductive trace with an interconnect site. A conductive bump material is deposited on the interconnect site or die bump pad. The semiconductor die is mounted over the substrate so that the bump material is disposed between the die bump pad and interconnect site. The bump material is reflowed without a solder mask around the die bump pad or interconnect site to form an interconnect structure between the die and substrate. The bump material is self-confined within the die bump pad or interconnect site. The volume of bump material is selected so that a surface tension maintains self-confinement of the bump material substantially within a footprint of the die bump pad and interconnect site. The interconnect structure can have a fusible portion and non-fusible portion. An encapsulant is deposited between the die and substrate.
1. A method of making a semiconductor device, comprising:
providing a first semiconductor structure including a first interconnect site;
providing a second semiconductor structure including a second interconnect site;
depositing a conductive material self-confined between the first interconnect site and second interconnect site by a wettable state of the conductive material; and
forming an insulating layer around the first interconnect site.
2. The method of claim 1 , further including depositing an encapsulant between the first semiconductor structure and second semiconductor structure.
3. The method of claim 1 , further including selecting a volume of conductive material deposited between the first interconnect site and second interconnect site to maintain self-confinement of the conductive material.
4. The method of claim 1 , wherein the conductive material covers a top surface and side surface of the first interconnect site or second interconnect site.
5. The method of claim 1 , wherein the conductive material includes a fusible portion and non-fusible portion.
6. The method of claim 1 , further including immersing the conductive material in a flux solution.
7. A semiconductor device, comprising:
a first semiconductor structure including a first interconnect site;
a second semiconductor structure including a second interconnect site;
a conductive material disposed between the interconnect site and conductive trace to form an interconnect structure without a mask bonding the first semiconductor structure and second semiconductor structure; and
an insulating layer formed around the first interconnect site.
8. The semiconductor device of claim 7 , further including an encapsulant deposited between the first semiconductor structure and second semiconductor structure.
9. The semiconductor device of claim 7 , wherein the conductive material is self-confined between the first interconnect site and second interconnect site.
10. The semiconductor device of claim 7 , wherein the interconnect structure covers a top surface and side surface of the first interconnect site or second interconnect site.
11. The semiconductor device of claim 7 , wherein the interconnect structure includes a fusible portion and non-fusible portion.
12. A semiconductor device, comprising:
a first semiconductor structure including a first interconnect site;
a second semiconductor structure including a second interconnect site; and
a conductive material self-confined between the first interconnect site and second interconnect site.
13. The semiconductor device of claim 12 , further including an encapsulant deposited between the first semiconductor structure and second semiconductor structure.
14. The semiconductor device of claim 12 , wherein the conductive material covers a top surface and side surface of the first interconnect site or second interconnect site.
15. The semiconductor device of claim 12 , wherein the conductive material includes a fusible portion and non-fusible portion.
16. The semiconductor device of claim 12 , further including an insulating layer formed around the first interconnect site.
17. The semiconductor device of claim 12 , further including a flux solution deposited over the conductive material.