Method for producing a microelectromechanical device and microelectromechanical device
The invention relates to a method for producing a micro-electromechanical device in a material substrate suitable for producing integrated electronic components, in particular a semiconductor substrate, wherein a material substrate ( 12,14,16 ) is provided on which at least one surface structure ( 26 ) is to be formed during production of the device. An electronic component ( 30 ) is formed in the material substrate ( 12,14,16 ) using process steps of a conventional method for producing integrated electronic components. A component element ( 44 ) defining the position of the electronic component ( 30 ) and/or required for the function of the electronic component ( 30 ) is selectively formed on the material substrate ( 12,14,16 ) from an etching stop material acting as an etching stop in case of etching of the material substrate ( 12,14,16 ) and/or in case of etching of a material layer ( 52 ) disposed on the material substrate ( 12,14,16 ). When the component element ( 44 ) of the electronic component ( 30 ) is implemented, a bounding region ( 48 ) is also formed on the material substrate ( 12,14,16 ) along at least a partial section of an edge of the surface structure ( 26 ), wherein said bounding region bounds said partial section. The material substrate ( 12,14, 16 ) thus implemented is selectively etched for forming the surface structure ( 26 ), in that the edge of the bounding region ( 48 ) defines the position of the surface structure ( 26 ) to be implemented on the material substrate ( 12, 14,16 ).
1. A micro-electromechanical device comprising:
a material substrate including a surface structure located on a surface of the material substrate, wherein the surface structure comprises a depression having a vertical depression wall extending vertically from the surface of the material substrate into the material substrate, wherein a position of the depression is laterally defined by a first edge defined by the depression wall and the surface of the material substrate;
an electronic component arranged in the material substrate, wherein the electronic component comprises a component element having a third edge which defines a position of the electronic component in a predetermined relation to the first edge;
an etching stop material deposited on the material substrate or a material layer that is disposed on the material substrate;
a chamber; and
a bridging region,
wherein the material substrate has a bottom side and a top side,
wherein the depression of the surface structure is formed in the top side of the material substrate,
wherein the chamber is arranged in the bottom side of the material substrate,
wherein, within the bridging region, the top side of the material substrate bridges the chamber,
wherein the depression of the surface structure is arranged within the bridging region of the material substrate,
wherein the etching stop material is arranged so as to provide the third edge of the component element of the electronic component and a bounding region having a second edge extending along at least a partial section of the first edge,
wherein positions of the second edge and third edge have a predetermined relation relative to each other, and
wherein the second edge of the bounding region defines, on the material substrate, a position of the first edge in a predetermined relation to the third edge of the component element.
2. The micro-electromechanical device of claim 1 , further comprising an opening aligned with at least a portion of an edge of the surface structure, wherein the at least a portion of the edge of the surface structure is arranged on the material substrate via the opening of the material layer.
3. The micro-electromechanical device of claim 1 , wherein the etching stop material comprises a first etching stop material, the micro-electromechanical device further comprising:
a second etching stop material arranged on the material substrate,
wherein the material substrate and the first etching stop material comprise substantially identical materials, wherein the bounding region defines a position of at least a portion of an edge of the surface structure, wherein the bounding region is at least partially arranged on the second etching stop material.
4. The micro-electromechanical device of claim 3 , wherein the material substrate includes monocrystalline silicon, the first etching stop material includes polycrystalline silicon, and the second etching stop material includes silicon oxide.
5. The micro-electromechanical device of claim 1 , wherein the chamber is closed at the bottom side of the material substrate.
6. A micro-electromechanical device comprising:
a material substrate having a top side and a bottom side;
an electronic component integrated in the material substrate, the electronic component comprising a component element made of a first material; and
a surface structure formed in the top side of the material substrate or on the top side of the material substrate, the surface structure comprising a at least a portion of a bounding edge,
wherein the material substrate includes a bounding region comprising the first material,
wherein the bounding region is located on the top side of the material substrate or in a region near the top side of the material substrate,
wherein the bounding region laterally defines the at least a portion of the bounding edge of the surface structure,
wherein the surface structure comprises a depression, wherein a chamber is formed in the bottom side of the material substrate, and
wherein the depression is arranged within a region of the material substrate that bridges the chamber.
7. The micro-electromechanical device of claim 6 , wherein the electronic component includes a transistor comprising a gate and the component element includes the gate of the transistor.
8. The micro-electromechanical device of claim 6 , wherein the electronic component includes a resistor and the component element includes a resistance layer of the resistor.
9. The micro-electromechanical device of claim 6 , further comprising an electrically insulating region made of a second material, wherein the electrically insulating region extends along the bounding edge of the surface structure in the material substrate, wherein the first material is electrically conductive and is arranged on the second material.
10. The micro-electromechanical device of claim 6 , wherein the first material comprises polycrystalline silicon and second comprises silicon oxide.