Series-connected nanowire structures

1. A semiconductor structure, comprising:

a plurality of vertically stacked and released nanowires extending through a common metal replacement gate structure; and a plurality of epitaxially grown conductively doped contacts electrically connecting to the stacked nanowires on different sides of the gate structure, in a series configuration;

wherein the plurality of conductively doped contacts comprise:

a first contact of the doped contacts electrically connecting a first nanowire to a second nanowire on a first side of the gate structure;

a second contact of the doped contacts electrically connecting to the first nanowire on a second side of the gate structure;

a third contact of the doped contacts electrically connecting the second nanowire to a third nanowire on the second side of the gate structure;

a fourth contact of the doped contacts electrically connecting to the third nanowire on the first side of the gate structure;

metal contacts electrically connecting the first contact and the second nanowire and the third contact and the third nanowire; and

the plurality of vertically stacked nanowires and the doped contacts share the common metal replacement gate structure.

2. The structure of claim 1 , wherein the first, second, third and fourth contacts are P+ doped materials, forming a series FET.

3. The structure of claim 1 , wherein the first contact is P+ doped material and the second, third and fourth contacts are N+ doped contacts, forming a series stacked diode.

4. The structure of claim 1 , wherein the first and second contacts are N+ doped materials and the third and fourth contacts are P+ doped materials, forming an inverter.

5. The structure of claim 1 , wherein the plurality of vertically stacked nanowires are semiconductor material.