IP Library › Granted Patent US 10,075,704
Granted Patent B2
US 10,075,704 · App. 14/717,750 · Granted Sep 11, 2018

Methods and apparatus for generating test and overlay patterns in image sensors

Inventors: Cornelis Hoekstra (Corvallis, OR); Jeffery Beck (Corvallis, OR); Sergey Velichko (Boise, ID)
Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
H04N17/002H04N5/3592H04N5/374H04N5/3745
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Quick Facts
Patent No.
US 10,075,704
App. No.
14/717,750
Granted
Sep 11, 2018
Kind
B2
Abstract

An imaging system may include an image sensor having a pixel array. The pixel array may receive test signals from multiplexers located at the top or bottom of each column of the array. Test signals may be provided to each column based on a predefined test pattern. In some arrangements, pixel array photodiodes may receive test signals through an anti-blooming transistor while the anti-blooming transistor is on. In other arrangements, dark current of photodiodes in the pixel array may be modulated by voltages applied to the drain of an anti-blooming transistor while the anti-blooming transistor is off. In other arrangements, pixel array photodiodes may receive test signals through a reset transistor. Arbitrary test patterns may be applied to determine photodiode or floating diffusion node leakage and incorrect pixel control voltages. Arbitrary patterns may also be superimposed on light-based image data in the manner of a watermark.

Claims (45)

1. An image sensor having an array of pixels arranged in rows and columns and having at least one column test signal generator coupled to each pixel in an associated one of the columns, wherein each pixel in the column comprises:

a first transistor;

a second transistor;

a photodiode coupled between the first and second transistors, wherein the first transistor is directly coupled to the photodiode, wherein the second transistor is directly coupled to the photodiode, wherein the column test signal generator comprises a multiplexer having test signal inputs that is coupled to the photodiode through the second transistor, and wherein the multiplexer is directly coupled to the second transistor; and

a floating diffusion node, wherein the first transistor is coupled between the floating diffusion node and the photodiode.

2. The image sensor defined in claim 1 , wherein each pixel in the column further comprises:

a reset transistor coupled to the floating diffusion node; and

a source follower transistor having a gate that is coupled to the floating diffusion node.

3. The image sensor defined in claim 2 , wherein the reset transistor and the source follower transistor receive a pixel voltage.

4. The image sensor defined in claim 2 , further comprising:

a row select transistor coupled to the source follower transistor.

5. The image sensor defined in claim 1 , wherein the at least one column test signal generator provides a selected test voltage to the photodiode through the second transistor based on a predefined pattern and based on a row and a column in which each pixel is located.

6. An image sensor having an array of pixels arranged in rows and columns and having at least one column test signal generator coupled to each pixel in an associated one of the columns, wherein each pixel in the column comprises:

a first transistor coupled to a node;

a second transistor coupled to the node;

a photodiode coupled to the node, wherein the node is interposed between the first and second transistors, wherein the column test signal generator comprises a multiplexer having test signal inputs that is coupled to the photodiode through the second transistor and the node; and

a floating diffusion node, wherein the first transistor is coupled between the floating diffusion node and the node.

7. The image sensor defined in claim 6 , wherein each pixel in the column further comprises:

a reset transistor coupled to the floating diffusion node; and

a source follower transistor having a gate that is coupled to the floating diffusion node.

8. The image sensor defined in claim 6 , wherein the at least one column test signal generator provides a selected test voltage to the photodiode through the second transistor based on a predefined pattern and based on a row and a column in which each pixel is located.

9. An image sensor having an array of pixels arranged in rows and columns and having at least one column test signal generator coupled to each pixel in an associated one of the columns, wherein each pixel in the column comprises:

a first transistor;

a second transistor;

a photodiode coupled to a node that is interposed between the first and second transistors, wherein the column test signal generator comprises a multiplexer having test signal inputs that is coupled to the photodiode through the second transistor and wherein the second transistor is the only transistor interposed between the photodiode and the multiplexer; and

a floating diffusion node, wherein the first transistor is coupled between the floating diffusion node and the node.

10. The image sensor defined in claim 9 , wherein each pixel in the column further comprises:

a reset transistor coupled to the floating diffusion node; and

a source follower transistor having a gate that is coupled to the floating diffusion node.

11. The image sensor defined in claim 9 , wherein the at least one column test signal generator provides a selected test voltage to the photodiode through the second transistor based on a predefined pattern and based on a row and a column in which each pixel is located.

12. The image sensor defined in claim 9 , wherein each pixel in the column further comprises:

a reset transistor coupled to the floating diffusion node;

a source follower transistor having a gate that is coupled to the floating diffusion node, wherein the reset transistor and the source follower transistor receive a pixel voltage; and

a row select transistor coupled to the source follower transistor, wherein the at least one column test signal generator provides a selected test voltage to the photodiode through the second transistor based on a predefined pattern and based on a row and a column in which each pixel is located.

13. The image sensor defined in claim 6 , wherein each pixel in the column further comprises:

a reset transistor coupled to the floating diffusion node;

a source follower transistor having a gate that is coupled to the floating diffusion node, wherein the reset transistor and the source follower transistor receive a pixel voltage; and

a row select transistor coupled to the source follower transistor, wherein the at least one column test signal generator provides a selected test voltage to the photodiode through the second transistor based on a predefined pattern and based on a row and a column in which each pixel is located.

14. The image sensor defined in claim 1 , wherein each pixel in the column further comprises:

a reset transistor coupled to the floating diffusion node;

a source follower transistor having a gate that is coupled to the floating diffusion node, wherein the reset transistor and the source follower transistor receive a pixel voltage; and

a row select transistor coupled to the source follower transistor, wherein the at least one column test signal generator provides a selected test voltage to the photodiode through the second transistor based on a predefined pattern and based on a row and a column in which each pixel is located.

15. The image sensor defined in claim 1 , wherein each pixel in the column further comprises:

readout circuitry coupled to the floating diffusion node.

16. The image sensor defined in claim 15 , wherein the at least one column test signal generator provides a selected test voltage to the photodiode through the second transistor based on a predefined pattern and based on a row and a column in which each pixel is located.

Assignments (4)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 038620, FRAME 0087 Recorded Jun 22, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064070/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE INCORRECT PATENT NUMBER 5859768 AND TO RECITE COLLATERAL AGENT ROLE OF RECEIVING PARTY IN THE SECURITY INTEREST PREVIOUSLY RECORDED ON REEL 038620 FRAME 0087. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Aug 25, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 039853/0001 →
SECURITY INTEREST Recorded Apr 15, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 038620/0087 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 20, 2015
From: HOEKSTRA, CORNELIS; BECK, JEFFERY; VELICHKO, SERGEY
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 035683/0408 →
Continuity (1)
Related Publication 20160345005A1 · Nov 24, 2016
Cited By (3)
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