Bottom-gate thin-body transistors for stacked wafer integrated circuits
View Patent ↗An integrated circuit die may include bottom-gate thin-body transistors. The bottom-gate thin-body transistors may be formed in a thinned-down substrate having a thickness that is defined by shallow trench isolation structures that provide complete well isolation for the transistors. The transistors may include gate terminal contacts formed through the shallow trench isolation structures, bulk terminal contacts that are formed through the thinned substrate and that overlap with the gate contacts, and source-drain terminal contacts with in-situ salicide. Additional metallization layers may be formed over the gate/bulk/source-drain contacts after bonding.
1. A transistor in an integrated circuit, comprising:
a substrate having a first surface and a second surface;
a gate conductor formed over the first surface of the substrate;
a dielectric layer formed over the second surface of the substrate; and
a gate terminal contact that is formed over the dielectric layer, wherein the gate terminal contact passes through the dielectric layer and the substrate to directly contact the gate conductor.
2. The transistor defined in claim 1 , further comprising:
a shallow trench isolation structure formed in the substrate, wherein the gate terminal contact passes through the shallow trench isolation structure to directly contact the gate conductor, and wherein the shallow trench isolation structure defines the thickness of the substrate.
3. A transistor in an integrated circuit, comprising:
a substrate having a first surface and a second surface;
a gate conductor formed over the first surface of the substrate;
a gate terminal contact that is formed over the second surface of the substrate;
a shallow trench isolation structure formed in the substrate, wherein the gate terminal contact is coupled to the gate conductor through the shallow trench isolation structure, and wherein the shallow trench isolation structure defines the thickness of the substrate; and
an additional shallow trench isolation structure that is formed in the substrate and that has a different depth than the shallow trench isolation structure.
4. The transistor defined in claim 3 , further comprising:
a body terminal contact that is formed over the second surface of the substrate and directly over the additional shallow trench isolation structure, wherein the body terminal contact has a length that is substantially equal to the thickness of the dielectric layer.
5. The transistor defined in claim 4 , wherein the body terminal contact overlaps directly with the gate conductor.
6. The transistor defined in claim 1 , further comprising:
source-drain diffusion regions that are formed in the substrate and extend between the first and second surfaces; and
source-drain terminal contacts that are formed over the second surface of the substrate and that are in-situ salicided at the second surface of the substrate.
7. The transistor defined in claim 6 , further comprising:
salicide formed on the source-drain diffusion regions at the first surface of the substrate.
8. The transistor defined in claim 1 , further comprising:
a plurality of metallization layers formed above the gate terminal contact over the second surface of the substrate.
9. The transistor defined in claim 2 , further comprising:
an additional shallow trench isolation structure that is formed in the substrate and that has a different depth than the shallow trench isolation structure.
10. The transistor defined in claim 9 , further comprising:
a body terminal contact that is formed over the second surface of the substrate, wherein the substrate includes a bulk region, and wherein the body terminal contact passes through the dielectric layer to directly contact the bulk region.
11. The transistor defined in claim 1 , further comprising:
a body terminal contact that is formed over the second surface of the substrate, wherein the body terminal contact passes through the dielectric layer to directly contact a bulk region of the transistor.
12. A transistor in an integrated circuit, comprising:
a substrate having a first surface and a second surface, wherein a portion of the substrate forms a bulk region for the transistor;
a gate conductor formed over the first surface of the substrate;
a dielectric layer formed over the second surface of the substrate;
a gate terminal contact that is formed over the second surface of the substrate, wherein the gate terminal contact passes through the dielectric layer and the substrate to directly contact the gate conductor; and
a body terminal contact that is formed over the second surface of the substrate, wherein the body terminal contact passes through the dielectric layer to directly contact the bulk region.
13. The transistor defined in claim 12 , further comprising:
a shallow trench isolation structure formed in the substrate, wherein the gate terminal contact passes through the shallow trench isolation structure to directly contact the gate conductor.
14. The transistor defined in claim 13 , wherein the shallow trench isolation structure defines the thickness of the substrate.
15. The transistor defined in claim 14 , further comprising:
an additional shallow trench isolation structure that is formed in the substrate and that has a smaller depth than the shallow trench isolation structure.
16. The transistor defined in claim 12 , further comprising:
source-drain diffusion regions that are formed in the substrate and extend between the first and second surfaces; and
source-drain terminal contacts that are formed over the second surface of the substrate, wherein the source-drain terminal contacts pass through the dielectric layer to directly contact the source-drain diffusion regions.