Semiconductor device utilizing redistribution layers to couple stacked die
View Patent ↗A method for a semiconductor device utilizing redistribution layers to couple stacked die is disclosed and may include bonding a first semiconductor die to a second semiconductor die, the first semiconductor die having a first surface comprising bond pads, a second surface opposite the first surface that is bonded to a first surface of the second semiconductor die, and sloped sides surfaces between the first and second surfaces of the first semiconductor die, such that a cross-section of the first semiconductor die is trapezoidal in shape. A passivation layer may be formed on the first surface and sloped side surfaces of the first semiconductor die and the first surface of the second semiconductor die. A redistribution layer may be formed on the passivation layer formed on the first surface and sloped side surfaces of the first semiconductor die and the first surface of the second semiconductor die.
1. A method for a semiconductor device, the method comprising:
bonding a first semiconductor die to a second semiconductor die, the first semiconductor die having a first surface comprising bond pads, a second surface opposite the first surface that is bonded to a first surface of the second semiconductor die, and sloped sides surfaces between the first and second surfaces of the first semiconductor die, such that a cross-section of the first semiconductor die is trapezoidal in shape;
forming a passivation layer on the first surface and sloped side surfaces of the first semiconductor die and the first surface of the second semiconductor die;
forming a redistribution layer on the passivation layer formed on the first surface and sloped side surfaces of the first semiconductor die and the first surface of the second semiconductor die, the redistribution layer electrically coupling at least one of the bond pads on the first surface of the first semiconductor die to a bond pad on the first surface of the second semiconductor die; and
encapsulating at least a portion of the first semiconductor die, the redistribution layer, and the first surface of the second semiconductor die with an encapsulant material.
2. The method according to claim 1 , comprising forming a second redistribution layer on the encapsulant material.
3. The method according to claim 2 , comprising forming a conductive pillar that extends from a bond pad on the first surface of the second semiconductor die to the second redistribution layer.
4. The method according to claim 3 , comprising forming a solder ball on the second redistribution layer.
5. The method according to claim 1 , comprising forming a conductive pillar that extends from a bond pad on the first surface of the second semiconductor die to a top surface of the encapsulant material.
6. The method according to claim 5 , comprising forming a solder ball on the conductive pillar at the top surface of the encapsulant material.
7. The method according to claim 6 , comprising electrically coupling a circuit board to the bond pad on the first surface of the second semiconductor die utilizing the solder ball and the conductive pillar.
8. A method of fabricating a semiconductor device, the method comprising:
bonding a first semiconductor die to a circuit board, the first semiconductor die having a first surface comprising bond pads, a second surface opposite the first surface that is bonded to a first surface of the circuit board, and sloped side surfaces between the first and second surfaces of the first semiconductor die, such that a cross-section of the first semiconductor die is trapezoidal in shape;
forming a passivation layer on the first surface and sloped side surfaces of the first semiconductor die and the first surface of the circuit board;
forming a redistribution layer on the passivation layer formed on the first surface and sloped side surfaces of the first semiconductor die and the first surface of the circuit board, the redistribution layer electrically coupling at least one bond pad on the first surface of the first semiconductor die to a bond pad on the first surface of the circuit board; and
encapsulating at least a portion of the first semiconductor die, the redistribution layer, and the first surface of the circuit board utilizing an encapsulant material.
9. The method according to claim 8 , comprising forming solder balls on a second surface of the circuit board opposite to the first surface of the circuit board.
10. The method according to claim 8 , comprising embedding at least one of the bond pads on the first surface of the first semiconductor die within the passivation layer.
11. The method according to claim 8 , comprising embedding the bond pads on the circuit board within the passivation layer on the first surface of the circuit board.
12. The method according to claim 8 , comprising forming a first conductive pillar that extends from one of the bond pads on the circuit board to a top surface of the encapsulant material.
13. The method according to claim 12 , comprising forming a first solder ball on the first conductive pillar.
14. The method according to claim 13 , comprising forming a second conductive pillar that extends from a bond pad on the first surface of the semiconductor die to the top surface of the encapsulant material.
15. The method according to claim 14 , comprising forming a second solder ball that on the second conductive pillar at the top surface of the encapsulant material.
16. The method according to claim 15 , comprising electrically coupling a first surface of a second circuit board to the first and second solder balls.
17. The method according to claim 16 , comprising electrically coupling bond pads on the first surface of the second circuit board to the first and second solder balls.
18. The method according to claim 16 , comprising forming a third solder ball on a second surface of the second circuit board opposite the first surface of the second circuit board, wherein the third solder ball is in contact with a circuit pattern on the second surface of the second circuit board.
19. The method according to claim 18 , comprising forming an insulating layer on the second surface of the second circuit board.
20. A method of forming a semiconductor device, the method comprising:
bonding a first semiconductor die to a second semiconductor die, said first semiconductor die having a first surface comprising bond pads, a second surface opposite the first surface that is bonded to a first surface of the second semiconductor die, and sloped side surfaces between the first and second surfaces of the first semiconductor die, such that a cross-section of the first semiconductor die is trapezoidal in shape;
forming a passivation layer on the first surface and sloped side surfaces of the first semiconductor die and the first surface of the second semiconductor die; and
forming a redistribution layer on the passivation layer formed on the first surface and sloped side surfaces of the first semiconductor die and the first surface of the second semiconductor die, said redistribution layer electrically coupling at least one bond pad on the first surface of the first semiconductor die to a bond pad on the first surface of the second semiconductor die.