Method and apparatus for plasma dicing a semi-conductor wafer
View Patent ↗The present invention provides a method for plasma dicing a substrate. The method comprising: providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate on a carrier support to form a work piece; providing an intermediate ring interposed between the substrate and the frame; loading the work piece onto the work piece support; generating a plasma through the plasma source; and etching the work piece through the generated plasma.
1. A method for plasma processing a substrate, the method comprising:
providing a process chamber having a wall;
providing a plasma source adjacent to the wall of the process chamber;
providing a work piece support within the process chamber;
placing the substrate onto a carrier support film on a frame to form a work piece;
providing an intermediate ring interposed between the substrate and the frame;
loading the work piece onto the work piece support;
generating a plasma through the plasma source; and
etching the work piece through the generated plasma while a portion of the support film is exposed to the generated plasma.
2. The method according to claim 1 wherein the intermediate ring contacts the support film.
3. The method according to claim 1 further comprising:
the intermediate ring having an inner diameter; and
the substrate having an outer diameter;
wherein the inner diameter of the intermediate ring being greater in size than the outer diameter of the substrate.
4. The method according to claim 1 wherein the intermediate ring being positioned coplanar with the substrate.
5. The method according to claim 1 wherein the intermediate ring further comprising one or more pieces.
6. The method according to claim 1 further comprising:
the support film having an upper surface and a lower surface; and
the intermediate ring being positioned on the upper surface of the support film, and the substrate being positioned on the upper surface of the support film.
7. A method for plasma dicing a substrate, the method comprising:
assembling a work piece having a rigid frame, an intermediate ring, a flexible membrane, and at least one substrate;
transferring said work piece into a processing chamber;
exposing the substrate of said work piece to a plasma while a portion of the flexible membrane is exposed to said plasma;
modifying said work piece by removing the rigid frame; and
processing said modified work piece.