Method and apparatus for plasma dicing a semi-conductor wafer
The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.
1. A method for plasma etching a substrate, the method comprising:
providing a process chamber having a wall;
providing a high density plasma source adjacent to the wall of the process chamber;
providing a work piece support within the process chamber;
providing a work piece having a support film, a frame and the substrate;
placing the work piece on said work piece support;
providing a mechanical partition within the process chamber, said mechanical partition being positioned between the high density plasma source and the work piece;
providing a cover ring within the process chamber, said cover ring being positioned between the mechanical partition and the work piece;
generating a plasma using the high density plasma source;
sustaining the generated plasma from the high density plasma source below the mechanical partition by applying an RF bias power through said work piece support; and
etching the substrate of the work piece using the generated plasma from the high density plasma source while the cover ring does not contact the work piece.
2. The method according to claim 1 further comprising providing a plurality of mechanical partitions within the process chamber, said plurality of mechanical partitions being positioned between the high density plasma source and the work piece, as least two of said plurality of mechanical partitions each having at least one perforation.
3. The method according to claim 2 wherein none of the perforations in the plurality of mechanical partitions overlap one another.
4. The method according to claim 2 wherein at least one of the perforations in one of the plurality of mechanical partitions does not overlap at least one of the perforations in another mechanical partition.
5. The method according to claim 2 further comprising using a pulsed high frequency RF bias during the etching of the substrate with the plurality of mechanical partitions.
6. A method for plasma etching a substrate, the method comprising:
providing a process chamber having a wall;
providing a high density plasma source adjacent to the wall of the process chamber;
providing a work piece having a support film, a frame and the substrate;
providing a work piece support within the process chamber;
placing the work piece on said work piece support;
providing a plurality of mechanical partitions within the process chamber, said plurality of mechanical partitions being positioned between the high density plasma source and the work piece;
providing a cover ring within the process chamber, said cover ring being positioned between the plurality of mechanical partitions and the work piece;
generating a plasma using the high density plasma source;
reducing an ion density of the generated plasma from the high density plasma source in a region below the plurality of mechanical partitions;
sustaining the generated plasma from the high density plasma source in the region below the plurality of mechanical partitions by applying an RF bias power through said work piece support; and
etching the substrate of the work piece by exposing a surface of the substrate to the reduced plasma ion density of the generated plasma from the high density source in the region below the plurality of mechanical partitions while the cover ring does not contact the work piece.
7. The method according to claim 6 further comprising reducing the ion density of the generated plasma from the high density plasma source in the region below the plurality of mechanical partitions from greater than approximately 10 11 cm −3 to approximately 10 10 cm −3 near the surface of the substrate.